• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.9-17
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• 2017

In these days, MEMS (micro-electro-mechanical system) devices become the crucial sensor components in mobile devices, automobiles and several electronic consumer products. For MEMS devices, the packaging determines the performance, reliability, long-term stability and the total cost of the MEMS devices. Therefore, the packaging technology becomes a key issue for successful commercialization of MEMS devices. As the IoT and wearable devices are emerged as a future technology, the importance of the MEMS sensor keeps increasing. However, MEMS devices should meet several requirements such as ultra-miniaturization, low-power, low-cost as well as high performances and reliability. To meet those requirements, several innovative technologies are under development such as integration of MEMS and IC chip, TSV(through-silicon-via) technology and CMOS compatible MEMS fabrication. It is clear that MEMS packaging will be key technology in future MEMS. In this paper, we reviewed the recent development trends of the MEMS packaging. In particular, we discussed and reviewed the recent technology trends of the MEMS bonding technology, such as low temperature bonding, eutectic bonding and thermo-compression bonding.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.09a
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• pp.55-85
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• 2000

MEMS(Micro Electro Mechanical System) technology. MEMS Inertial Sensors promise a new wide market for many areas -Challenge. significant cost reduction by wafer level packaging and testing. decreasing of power consumption by miniaturization. enhancing of performance and reliability. on-chip integration for multiplicity. MEMS is newly emerging technology.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.137-140
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• 2002

The main objectives in the first year include selection of the MEMS bonding methods and feasibility study of selected methods. The ultrasonic bonding method is chosen for MEMS packaging, and the processes to provide localized heating are proposed. The ultrasonic bonding process is analyzed using a lumped model. Preliminary experiments using the eutectic solder and copper pin were performed to verify possibility to MEMS packaging. The preliminary results show possibility of the ultrasonic bonding method for MEMS packaging.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.29-33
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• 2000

MEMS, Micro Electro-Mechanical Systems, present one of the greatest advanced packaging challenges of the next decade. Historically hybrid technology, generally thick film, provided sensors and actuators while integrated circuit technologies provided the microelectronics for interpretation and control of the sensor input and actuator output. Brought together in MEMS these technical fields create new opportunities for miniaturization and performance. Integrated circuit processing technologies combined with hybrid design systems yield innovative sensors and actuators for a variety of applications from single crystal silicon wafers. MEMS packages, far more simple in principle than today's electronic packages, provide only physical protection to the devices they house. However, they cannot interfere with the function of the devices and often must actually facilitate the performance of the device. For example, a pressure transducer may need to be open to atmospheric pressure on one side of the detector yet protected from contamination and blockage. Similarly, an optical device requires protection from contamination without optical attenuation or distortion being introduced. Despite impediments such as package standardization and complexity, MEMS markets expect to double by 2003 to more than ＄9 billion, largely driven by micro-fluidic applications in the medical arena. Like the semiconductor industry before it. MEMS present many diverse demands on the advanced packaging engineering community. With focused effort, particularly on standards and packaging process efficiency. MEMS may offer the greatest opportunity for technical advancement as well as profitability in advanced packaging in the first decade of the 21st century! This paper explores MEMS packaging opportunities and reviews specific technical challenges to be met.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.31-38
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• 2003

In the current electronic technology atmosphere, MEMS (Microelectromechanical System) technology is regarded as one of promising device manufacturing technologies to realize market-demanding device properties. In the packaging of MEMS devices, the packaged structure must maintain hermeticity to protect the devices from a hostile atmosphere during their operations. For such MEMS device vacuum packaging, we introduce the LTCC (Low temperature Cofired Ceramic) packaging technology, in which embedded passive components such as resistors, capacitors and inductors can be realized inside the package. The technology has also the advantages of the shortened length of inner and surface traces, reduced signal delay time due to the multilayer structure and cost reduction by more simplified packaging processes owing to the realization of embedded passives which in turn enhances the electrical performance and increases the reliability of the packages. In this paper, the leakage rate of the LTCC package having several interfaces was measured and the possibility of LTCC technology application to MEMS devices vacuum packaging was investigated and it was verified that improved hermetic sealing can be achieved for various model structures having different types of interfaces (leak rate: stacked via; $4.1{\pm}1.11{\times}10^{-12}$/ Torrl/sec, LTCC/AgPd/solder/Cu-tube; $3.4{\pm}0.33{\times}10^{-12}$/ Torrl/sec). In real application of the LTCC technology, the technology can be successfully applied to the vacuum packaging of the Infrared Sensor Array and the images of light-up lamp through the sensor way in LTCC package structure was presented.

• Transactions of Materials Processing
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• v.11 no.7
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• pp.596-600
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• 2002

The ultrasonic bonding method and its feasibility are investigated in this work for joining the micro components and MEMS packaging. The ultrasonic bonding process is analyzed using a lumped mode, and preliminary experiments using the eutectic solder and copper pin were carried out to verify possibility to MEMS packaging. The ultrasonic bonding process appears to be adequate for MEMS packaging by providing localized heating at the selected area. Microscopic behavior of the bond joint through ultrasonic vibration needs further investigation.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.197-205
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• 2005

Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.195-198
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• 2002

현재의 광통신, 이동통신 및 디지털 시대에서는 보다 소형화되고, 대용량의 데이터 저장 및 다기능 소자에 대한 요구가 많아지고 있다. 이러한 전자 산업 환경에서 MEMS 소자는 여러 요구조건을 만족시킬 수 있는 특징을 갖추고 있으며 실제 소자의 제작에 있어서 MEMS 소자를 이용하여 여러 물리 및 화학 센서 및 Actuator 제작에 응용이 되어지고 있고 Optical switch, Gyroscope, 적외선 어레이 센서, 가속도 센서, 위치 센서 등 여러 분야에서 실용화가 진행되어지고 있다. MEMS 구조물의 packaging 방법에 있어서는 내부 MEMS 소자의 동작을 위한 외부 환경으로부터의 보호를 위하여 Hermetic sealing에 대한 요구를 만족시켜야 한다. 본 발표에서는 이와 같은 MEMS device의 진공 패키지를 구현함에 있어서 기판 내부에 수동소자를 실장할 수 있는 LTCC 기술을 이용하여 진공 패키징하는 방법에 대하여 소개한다. 본 기술을 이용하는 경우 기존의 Hermetic sealing 이외에 향후 적층 기판 내부에 수동소자를 내장시켜 배선 길이 및 노이즈 성분을 감소시켜 더욱 전기적 성능을 향상시킬 수 있는 장점이 있게된다. 본 논문에서는 LTCC 기판을 이용하여 패키징 시킨 후, 내부 진공도에 영향을 줄 수 있는 계면들에서의 시간에 따른 진공도 변화의 특성치를 측정하여 LTCC 기판의 Hermetic sealing 특성에 관하여 조사하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.14.2-14.2
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• 2007

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.29-36
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• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.