• Korean Chemical Engineering Research
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• v.50 no.4
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• pp.738-742
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• 2012

Here, we develop a new nanofilter device for the rapid and efficient separation of nanoparticles and biomolecules, exploiting the use of AAO mebrane with ordered nanopores in the range from 20 nm to 200 nm. Briefly, the chip comprises of a series of the upper and lower PDMS channels containing embedded inlet and outlet ports, and $50{\mu}m$ width microfluidic channel, and AAO membrane to be made the filtering zone. After assembling these components, the acrylate plastic plates were used to fix the device on the top and bottom side. When introducing the samples into the inlet ports of the upper PDMS channel, we were able to separate and concentrate the nanoparticles and target molecules at the filtering zone, and to elute the solutions containing the unwanted materials toward the lower PDMS channels normal to the direction of AAO membrane. To demonstrate the usefulness of the device we apply it to the SERS detection of nucleic acid sequences associated with Dengue virus serotype 2. We report a limit of detection for Dengue sequences of 300 nM and show excellent enhancement of Raman signals from the filter zone of the nanofilter device.

• Journal of radiological science and technology
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• v.41 no.6
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• pp.603-610
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• 2018

This study examined the following: accuracy of the exposure conditions in the inverter device and three-phase device; output waveform over the exposure conditions; and average and standard deviation of the output waveform. After assessing whether the dose corresponding to the theoretical dose was presented, the following conclusions were obtained: 1. The accuracy of the tube voltage(kVp) and tube current(mA) exposure time(sec) was within the tolerable level prescribed in Korea's Safety Management Standards. In the error, Inverter device was large the tube voltage and exposure time, the three-phase device was large the tube current. 2. In terms of the output waveform of the exposure conditions and the average and standard deviation of the output waveform, the higher tube voltage and larger tube current resulted in greater standard deviation in pulsation. Moreover, the standard deviation of pulsation was shown to be greater in the inverter device than the three-phase device; there was also greater standard deviation in the inverter device considering the exposure time. 3. Regarding the exposure conditions over the output dose, all linearity showed the coefficient of variation which had an allowable limit of error within 0.05. Although the output dose ratio for the inverter device was 1.00~1.10 times no difference that of the three-phase device, there was almost no difference in dose ratio between the tube currents.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• Horticultural Science & Technology
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• v.16 no.3
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• pp.352-354
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• 1998

A soilless culture system with the precise control of nutrient solution was developed and the time changes of ionic contribution to EC reading was analyzed. The measuring device designed was able to wash electrodes cleanly and to measure the pH and EC of nutrient solution stably in the box. The nutrient supply system using metering device was also able to control the EC and pH within ${\pm}0.05mS/cm$ and ${\pm}0.05$, respectively. Under the EC control, activity coefficients of all ions decreased with time as ionic concentrations of $SO_4$, Mg and Ca increased due to the selective nutrient absorption by plants. Time changes of ionic contribution to EC reading could be calculated using equivalent ionic conductivities and activity coefficients obtained by numerical analysis.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.1
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• pp.47-52
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• 2017

This study is BIT(: Bus Information Terminal) features that take advantage of KEPCO eIoT(: energy Internet of Thing) platform, and it's Network configuration is composed of display terminal device, gateway, platform, and the service server. The key features are parts for processing protocol data between the gateway and the device using LoRa(: Long Range) technology, Intelligent applications and SIP(: Session Initiation Protocol) data handling connected to the Taxi reservation system. And the resource tree provided BIT for the service, which commonly used in the application server and the device.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.11
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• pp.1107-1112
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• 2016

This study is the Smart Office features that take advantage of KEPCO eIoT(: energy Internet of Thing) platform, and it's Network configuration is composed of sensing device, gateway, platform, and the service server. The key features are parts for processing protocol data between the gateway and the device using LoRa(: Long Range) technology, Intelligent applications and public safety data connected to the PS-LTE(: Public Safety-Long-Term Evolution) system. And the resource tree provided Smart Office for the service, which commonly used in the application server and the device.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.3
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• pp.206-211
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• 2011

In this paper, we report a high-precision wireless gap sensor based on a surface acoustic wave (SAW) device. The sensing element is a parallel-plate capacitor whose dimensions are $3{\times}3\;mm^2$, and is attached to the SAW device as an external load. The SAW device, equipped with an RF antenna, serves simultaneously as a signal conditioner and an RF transponder. The center frequency of the SAW device is 450 MHz. The wireless gap sensor prototype exhibits a resolution of 100 nm and a sensing range of $50{\mu}m$. The proposed sensor system can be used for remote, high-precision gap measurement in hard-to-reach environments.

• ETRI Journal
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• v.18 no.3
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• pp.181-193
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• 1996

A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than $0.5;mA/cm^2$. The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• Journal of the Korean Chemical Society
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• v.54 no.3
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• pp.291-294
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• 2010

In this study, we demonstrated high-efficiency blue organic light-emitting diodes (OLEDs) employing BCzVBi as a blue fluorescent dye doped into blue host material, DPVBi with various concentration. The optimized blue OLED device having high-efficiency was constructed with structure of NPB (500 ${\AA}$) / DPVBi:BCzVBi-6% (150 ${\AA}$)/$Alq_3$(300 ${\AA}$) / Liq (20 ${\AA}$) / Al (1000 ${\AA}$). The maximum luminescence of blue OLED was 13200 cd/$m^2$ at 13.8 V and current density and maximum efficiency were 26.4 mA/$cm^2$ at 1000 cd/$m^2$ and 4.24 cd/A at 3.9 V, respectively. Luminous efficiency shows two times higher than comparing with non-doped BCzVBi blue OLED whereas $CIE_{x,y}$ coordinate was similar with bare DPVBi blue OLED such as (0.16, 0.19). Electroluminescence of BCzVBi-6% doped blue OLED has two major peaks at 445 nm and 470 nm whereas pure DPVBi's blue peak appears at 456 nm and it is happened through endothermic Forster energy transfer by molecule's vibration between LUMO of DPVBi as host material and LUMO of BCzVBi as dopant in device.