• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1294-1296
• /
• 2005

We have fabricated white organic light emitting diodes. To obtain balanced white emission and improve the efficiency of devices, thin electron blocking layer (TEBL) was inserted between the emitting layers. We showed that the effective injection of electrons through the optimization of TEBL (a - NPD) embodied the balance of spectra and had a possibility of getting white emission. In a device with 0.3 nm a-NPD, it had a maximum power efficiency of 3.80 lm/w at 250 $cd/m^2$, a luminance of 1200 $cd/m^2$ at 100 $mA/cm^2$ , and the CIE coordinates were (0.353, 0.357).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.12 no.6
• /
• pp.890-898
• /
• 2001

4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.1
• /
• pp.13-20
• /
• 2000

In this paper, we demonstrated an analytical description method of forward votage drop and reverse leakage current of the junction barrier controlled schottky rectifier with linearly graded junction and abrupt junction models. In this case, the vertical depths of device are 1[${\mu}{\textrm}{m}$] and 2[${\mu}{\textrm}{m}$], respectively. Through ion implantation and annealing process, we obtain the data of lateral and depth from implanted 2-dimensional profiles. Also we applied these data to models that indicate the change of depletion each on linearly-graded and abrupt juction as the forward and revers bias. After applied depletion changes to electric characteristics of JBS rectifiers, we calculated the forward I-V, the reverse leakage current and temperatures vs. power dissipations according to each junction. When we compared the rectifier with calculated and measured data, from the calculated results, forward votage drop with linearly graded junction is lower than that of abrupt junction and reverse leakage current with linearly graded junction is lower(≒1$\times$10\ulcorner times) than that of abrupt junction. Also, the power dissipations according to different juction depth(1[${\mu}{\textrm}{m}$], 2[${\mu}{\textrm}{m}$]) of device are calculated. Seeing the calculated results, we confirmed it from analytic model that the rectifier with linearly graded junction retained a low power dissipation up to 600[$^{\circ}C$] in comparison with the rectifier with abrupt junction.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.128.2-128.2
• /
• 2014

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12eV) at 80 K while under an applied bias of -1.4V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.2{\times}10^{-5}A/cm^2$ at 80 K and with a bias -1.4 V. The responsivity was 1.9 A/W at $7.5{\mu}m$ at 80K and with a bias of -1.9V.

• Journal of Advanced Navigation Technology
• /
• v.14 no.1
• /
• pp.20-26
• /
• 2010

In this paper, a frequency tripler has been designed with 100mW medium-power using P-HEMT. It is designed to obtain 7.2 GHz frequency at the output that is an integer multiple of 2.4 GHz input frequency by using nonlinear device that produces 3rd harmonic. The frequency tripler is designed by using load-pull simulation. To suppress the 2nd and fundamental, notch filter is used for the frequency tripler. The tripler is designed to obtain about 21dBm output power with 15 dBm input, i.e., 6 dB conversion gain and the suppression of 20 dBc at fundamental, and 30 dBc at the second harmonics.

• Journal of IKEEE
• /
• v.9 no.2 s.17
• /
• pp.161-169
• /
• 2005

This paper presents the new structural Low voltage LVTSCR and TWSCR ESD protection circuit. The proposed ESD protection circuit has lower triggering voltage than conventional circuits. And the LVTSCR has the triggering voltage of 9V, current of 7mA and can pass below 0.8KV (150mA/um). The triggering voltage of the Triple-well SCR measured to 6V and the current is 40mA. By the substrate and gate bias, the triggering voltage is lowered down to $4{\sim}5.5V$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.2
• /
• pp.131-133
• /
• 1994

Deposition of silicon on pretreated sapphire substrates has been investigated by the liquid phase epitaxy method at low temperatures. An average 14 $\mu\textrm{m}$ thickness of silicon was grown over a large area on sapphire substrate originally coated with a much thinner silicon layer $[0.5 \mu\textrm{m} (100) Si/(1102) sapphire]$ at low temperatures from $(380^{\circ}C to 460^{\circ}C)$.

• IEIE Transactions on Smart Processing and Computing
• /
• v.3 no.4
• /
• pp.221-225
• /
• 2014

Low power RF devices, such as RFID and Zigbee, are important for ubiquitous sensing. These devices, however, are powered by portable energy sources, such as batteries, which limits their use. To mitigate this problem, this study developed RF energy harvesting with W-CDMA for a low power RF device. Diodes are required with a low turn on voltage because the diode threshold is larger than the received peak voltage of the rectifying antenna (rectenna). Therefore, a Schottky diode HSMS-286 was used. A prototype of RF energy harvesting device showed the maximum gain of 5.8dBi for the W-CDMA signal. The 16 patch antennas were manufactured with a 10 dielectric constant PTFT board. In low power RF devices, the transmitter requires a step-up voltage of 2.5~5V with up to 35 mA. To meet this requirement, the Texas Instruments TPS61220 was used as a low input voltage step-up converter. From the evaluated result, the achievable incident power of the rectenna at 926mV to operate Zigbee can be obtained within a distance of 12m.

• Journal of the Society of Naval Architects of Korea
• /
• v.34 no.2
• /
• pp.20-26
• /
• 1997

A 6-component load cell (Fx=Fy=Fz=10Kg, Mx=My=Mz=1Kg-m)) is designed and manufactured. Basic mechanism of the operation is measuring strains coresponding to pure bending stresses, at certain portions of the device, due to forces and moments given. Wheastone bridge is used for the strain measurement and the amplified output signals from the bridge are decoupled to give the real forces and moments by using the influence coefficient matrix obtained through the calibration. Based on the result of the calibration test, the developed load cell is believed to be quite accurate and reliable. We also believe that the design experience provided us 'With essential information for future design of various types of conventional or object oriented force measuring device.

• Journal of Korean Society for Atmospheric Environment
• /
• v.31 no.6
• /
• pp.530-537
• /
• 2015

The wet electrostatic precipitator (wet ESP) is an effective control device which removes submicron particles reentrained in a collection plate and water soluble gas. However, its collection efficiency decreases, as its operation is subject to water-induced distortion of the collection electrode. In order to make up for the limitation, we modified the wet ESP system by installing electrosprayed discharge electrodes. The modified wet ESP system can wash both the collection plate and discharge electrode. As a result, we were able to fabricate a compact wet ESP with a small specific collecting area ($0.18m^2(m^3/min)$) that can accomplish a high collection efficiency of fine particles (97.1%). In addition, the device obtained a relatively low specific corona power of approximately $10W/(m^3/min)$.