Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
- /
- Pages.128.2-128.2
- /
- 2014
nBn Based InAs/GaSb Type II Superlattice Detectors with an N-type Barrier Doping for the Infrared Detection
- Kim, Ha-Sul ;
- Lee, Hun ;
- Hwang, Je-Hwan ;
-
Lee, Sang-Jun
;
- Klein, B. (University of New Mexico) ;
- Myers, S. (University of New Mexico) ;
- Krishna, S. (University of New Mexico)
- Published : 2014.02.10
Abstract
Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was
Keywords
- Stained layer superlattice (SLS);
- InAs/GaSb;
- Infrared photodiode;
- nBn;
- Kronig-Penney model;
- Responsivity (R)