• Progress in Superconductivity
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• v.3 no.1
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• pp.1-4
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• 2001

Interface-engineered junctions with $YbBa_2$$Cu_3$$O_{7}$ as the counter electrode were demonstrated. The junctions exhibited excellent Josephson characteristics with a Josephson critical current ($I_{c}$) ranging from 0.1 mA to 8 mA and a magnetic field modulation of the $I_{c}$ exceeding 80% at 4.2 K while maintaining complete c-axis orientation of the counter-electrode layer. The$ 1\sigma$ spreads in $I_{c}$ for junctions with an average $I_{c}$ of 1-2 mA were 5-8% for 16 junctions within a chip, and 9.3% for a 100-junction array. Our dI/dV measurements suggest that a theoretical approach taking into account both a highly transparent barrier and the proximity effect is required to fully understand the Junction characteristics.ristics.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.205-208
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• 2000

In this paper, a low voltage CMOS analog four-quadrant multiplier using two V-I converters is presented. The proposed V-I converter is composed of the series composite transistor and the low voltage composite transistor. The designed analog four-quadrant multiplier has simulated by HSPICE using 0.25$\mu\textrm{m}$ n-well CMOS process parameters with a 2V supply voltage. Simulation results show that the power dissipation is 1.55㎿, the cutoff frequency is 489MHz, and the THD can be 0.26％ at maximum differential input of 1V$\sub$p-p/.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1512-1514
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• 2005

사이리스터의 파괴 원인에는 온도, 전압, 전류, 진동 및 압력 등이 있다. 본 논문에서는 이러한 파괴원인들 중에서 전압과 온도를 스트레스 인자로 하여 가속열화에 따른 소자의 항복전압 특성의 변화에 대해 실험을 통해 분석하였다. 실험에 사용한 사이리스터는 $V_{DRM}$=1800, $V_{RRM}$=2300V, $I_{DRM}$, $I_{RRM}$=20mA인 소자를 사용하였으며, 실험 시 인가전압은 1kV, 온도는 $100^{\circ}C$로 고정하였다. 가속열화에 따른 순방향 및 역방향 항복특성의 변화를 가속열화 시간에 따라 나타내었고, 이를 바탕으로 전압과 온도에 따른 항복전압 감소의 원인과 열화의 진행에 대해 기술하였다.

• Kyungpook Mathematical Journal
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• v.59 no.2
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• pp.335-340
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• 2019

The energy of a graph G is the sum of the absolute values of the eigenvalues of the adjacency matrix of G. Some variants of energy can also be found in the literature, in which the energy is defined for the Laplacian matrix, Distance matrix, Commonneighbourhood matrix or Seidel matrix. The Seidel matrix of the graph G is the square matrix in which $ij^{th}$ entry is -1 or 1, if the vertices $v_i$ and $v_j$ are adjacent or non-adjacent respectively, and is 0, if $v_i=v_j$. The Seidel energy of G is the sum of the absolute values of the eigenvalues of its Seidel matrix. We present here some families of pairs of graphs whose Seidel matrices have different eigenvalues, but who have the same Seidel energies.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.2
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• pp.29-35
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• 1998

This paper describes architectures and design of a SIMD type parallel image processing chip called SliM-II. The chiphas a linear array of 64 processing elements (PEs), operates at 30 MHz in the worst case simulation and gives at least 1.92 GIPS. In contrast to existing array processors, such as IMAP, MGAP-2, VIP, etc., each PE has a multiplier that is quite effective for convolution, template matching, etc. The instruction set can execute an ALU operation, data I/O, and inter-PE communication simulataneously in a single instruction cycle. In addition, during the ALU/multiplier operation, SliM-II provides parallel move between the register file and on-chip memory as in DSP chips, SliM-II can greatly reduce the inter-PE communication overhead, due to the idea a sliding, which is a technique of overlapping inter-PE communication with computation. Moreover, the bandwidth of data I/O and inter-PE communication increases due to bit-parallel data paths. We used the COMPASS$^{TM}$ 3.3 V 0.6.$\mu$m standrd cell library (v8r4.10). The total number of transistors is about 1.5 muillions, the core size is 13.2 * 13.0 mm$^{2}$ and the package type is 208 pin PQ2 (Power Quad 2). The performance evaluation shows that, compared to a existing array processors, a proposed architeture gives a significant improvement for algorithms requiring multiplications.s.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.9
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• pp.1-5
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• 2011

In this paper, we investigated the characteristics of AlGaN/GaN HEMTs to optimize their DC and RF characteristics by using a two-dimensional device simulator. First, we analyzed the variation of the DC characteristics with respect to the variation of 2DEG concentrations when varying the Al mole fraction and the thickness of the AlGaN layer. Then, we examined the variation of the RF characteristics by varying the size and the location of the gate, source and drain electrodes. When the Al mole fraction increased from 0.2 to 0.45, both the transconductance and I-V characteristics increased. On the other hand, the I-V characteristics were improved but transconductance was decreased as the thickness of the AlGaN layer increased from 10nm to 50nm. In the RF characteristics, the gate length was found to be the most influential parameter, and the RF characteristics were improved when the gate length was shorten.

• Journal of IKEEE
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• v.21 no.3
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• pp.284-287
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• 2017

In this study, we examined the simulated electrical characteristics of single-gated feedback field effect transistors (FBFETs) and the influence of channel length variation of the memory window characteristics through the 3D device simulation. The simulations were carried out for various channel lengths from 50 nm to 100 nm. The FBFETs exhibited zero SS(< 1 mV/dec) and a current $I_{on}/I_{off}$ ratio${\sim}1.27{\times}10^{10}$. In addition, the memory windows were 0.31 V for 50 nm-channel-length devices while no memory windows were observed for 100 nm-channel-length devices.

• Korean Journal of Environment and Ecology
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• v.27 no.5
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• pp.579-591
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• 2013

This study was carried out to investigate the actual vegetation, the structure of plant community, and ecological succession sere of forest ecosystem in temperate northern climate zone, Daegwallyeong Ranch, Gangwon-do (Province) and to offer the basic data for planning of the forest managemant. As a result of analysis of actual vegetation, vegetation types divided into 56types and the area of survey site was $19,397,361m^2$. The ratio of vegetation type dominated by Quercus mongolica forest was 39.1%, primary grassland was 24.7%, Quercus mongolica-Deciduous broad-leaved forest was 11.3%. Twenty eight plots (size is $20m{\times}20m$) were set up and the results analyzed by DCA which in one of the ordination technique showed that the plant communities were divided into six groups which area community I (Pinus densiflora-Quercus mongolica community), community II (Quercus mongolica-Pinus densiflora community), community III (Quercus mongolica community), community IV (Quercus mongolica-Deciduous broad-leaved community), community V (Deciduous broad-leaved community), community VI (Sorbus alnifolia community). The age of community Iwas ranged from 57 to 62 years old, that of community IIwas ranged from 41 to 77 years old, community III was ranged from 47 to 108 years old, community IV was ranged from 47 to 82 years old, community V was 47 years old, community VI was 55 years old, thus we supposed that the age of the study site is about from 41 to 108 years old. The Ecological succession is predicted from Pinus densiflora community to Quercus mongolica community and Deciduous broad-leaved were distributed in the center of the valley in Daegwallyeong Ranch. According to the index of Shannon's diversity (unit: $400m^2$), community IV was ranged from 0.8203 to 1.1439, community III was ranged from 0.8019 to 1.1375, community V was 1.0993, community I was ranged from 0.9475 to 1.0797, community II was ranged from 0.6896 to 1.0324, community VI was 0.9909.