Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of CuPc FET with Different Substrate Temperature

  • Lee, Ho-Shik (Department of Hospital Biomedical Engineering, Dongshin University) ;
  • Park, Yong-Pil (Department of Hospital Biomedical Engineering, Dongshin University) ;
  • Cheon, Min-Woo (Department of Medicine, Chosun University)
  • Published : 2007.08.31
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Abstract

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

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References

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Cited by

  1. Electrical Properties of CuPc FET Using Two-type Electrode Structure vol.24, pp.12, 2011, https://doi.org/10.4313/JKEM.2011.24.12.988