• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.184-188
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• 2003

We fabricated a P-I-i-I-N $GaAs/Al_{0.35}Ga_{0.65}As$waveguide phase modulator with significant phase shift for the TE mode but negligible for the TM mode. We selected the P-I-i-I-N structure to cause a phase shift about the TM mode. The wavelength of $\lambda=1.55$\mu\textrm{m}$ was measured for both the TE and TM modes, respectively. As a result, the measured phase shift efficiency ($\Delta\phi$) by using the Fabry-Perot resonance method was $7.9^{\circ}/V.mm$ for TE-polarized light. Also, no modulation was observed for TM-polarized light.

• Nuclear Engineering and Technology
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• v.55 no.11
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• pp.4039-4047
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• 2023

This contribution describes the application of HPGe detector for the airborne quantitative analysis. The hardware of the airborne HPGe system was designed from the commercial components with only exception of the newly designed AirHPGeSpec special software to control, measure and process the data. The system was calibrated for the local air kerma rates measured on helicopter board and its conversion to the air kerma rates at 1 m above the ground was proposed. Two examples of the air kerma rates measured over the former uranium mining areas are presented and compared with the results of other airborne system on the board. This airborne HPGe system could be also used for measuring the surface activities in a radiation event. The nuclides of ¹³¹I, ¹³²Te - ¹³²I, ¹³³I, ¹³⁴I, ¹³⁵I, ¹³⁷Cs, ¹³⁴Cs, ⁸⁸Rb and ¹⁰³Ru were selected from possible nuclear power plant emergency scenarios. The Monte Carlo simulation was used to calculate HPGe detector efficiencies for the flight altitudes from 25 to 300 m for the energies from 300 keV to 3 MeV of the nuclides in question. Also, the detection limits according to the Currie method as well as ISO 11929-2010 for selected nuclides are presented.

• Bulletin of the Korean Chemical Society
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• v.26 no.5
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• pp.781-785
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• 2005

A fast and reliable method for the selective separation and preconcentration of $Cu^{2+}$ ions using homogeneous liquid-liquid extraction was developed. A new $\alpha$-dioxime derivative (2H-1,4-benzothioazine-2,3(4H)dionedioxime, Dioxime I) was synthesized and investigated as a suitable selective complexing ligand for $Cu^{2+}$ ions. Zonyl FSA (FSA) was applied as a phase-separator agent under the slightly acidic pH conditions. Under the optimal experimental conditions ([FSA] = 3.2% w/v, [THF] = 19.5% v/v, [Dioxime I] = 1.9 ${\times}\;10^{-3}$ M, and pH = 4.7), 10 ${\mu}g\;of\;Cu^{2+}$ in 5.2 mL aqueous phase could be extracted quantitatively into 80 $\mu$L of the sedimented phase. The maximum concentration factor was 65-fold. The limit of detection of the proposed method was 0.005 ng $mL^{-1}$. The reproducibility of the proposed method, on the 10 replicate measurements, was 1.3%. The influence of the pH, type and volume of the water-miscible organic solvent, concentration of FSA, concentration of the complexing ligand and the effect of different diverse ions on the extraction and determination of $Cu^{2+}$ ions were investigated. The proposed method was applied to the extraction and determination of $Cu^{2+}$ ion in different synthetic and natural water samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.871-877
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.111-116
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• 1998

The simple solid electrolyte carbon dioxide sensor with heaters were fabricated by using Li ionic conductor. Two Au electrodes were used for the reference and sensing electrode respectively. Two types of gas sensors, type ( I ) and type (II), were fabricated. Type ( I ) sensor was fabricated by the method of melting and crystallizing alkali metal carbonate at the temperature of $420{\sim}500^{\circ}C$. The sensing membrane of type (II) sensor was formed by the printing method on sensing electrode after metal carbonate was mixed with binder. The response characteristics of sensors fabricated for the carbon dioxide were investigated for a range of $CO_{2}$ concentration from 950 ppm to 9,950 ppm at operating temperature $420^{\circ}C$. Type ( I ) sensor and type (II) sensor showed the sensitivity of 62 mV/decade and 65 mV/decade respectively. The emf/decade of type (II) sensor tested at $420^{\circ}C$ almost followed the theoretical value of Nernst's equation and showed stable response characteristics with the fast response time of $15{\sim}20$ sec. Also type (II) sensor showed excellent stability and reproduction properties for 60 days.

• Bulletin of the Korean Space Science Society
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• 2004.04a
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• pp.92-92
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• 2004

2003년 2월 11일부터 13일까지 3일간 아르헨티나 CASLEO 천문대의 2.15m 망원경을 이용하여 근접쌍성 TY Men과 V593 Cen을, 2003년 2월 26일부터 27일까지 2일간 보현산 천문대의 1.8m 망원경을 이용하여 근접쌍성 BX And를 에셀분광기로 분광관측하였다. IRAF의 분광처리 패키지를 사용하여 관측자료를 전처리 하였고, IRAF의 XCSAO의 CCF(Cross Correlation Function)와 Rucinski의 BF(Brodening Function)를 이용하여 세별의 단일 시선속도곡선을 각각 구하였다. (중략)

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.86-89
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.723-726
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.622-627
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• 2005

In this study, electrical properties of self-assembled dipyridinium dithioacetate molecule onto the Au(111) substrate is observed using Scanning Tunneling Microscopy(STM) by vortical structure of STM probe. At first, the Au(111) substrate is cleaned by piranha solution$(H_2SO_4:H_2O_2\;=\;3:1)$. Subsequently, 1 mM/ml of dipyridinium dithioacetate molecule is self-assembled onto the Au(111) surface. Using STM, the images of dipyridinium dithioacetate molecule which is self-assembled onto the Au(111) substrate, can be observed. In addition, the electrical properties(I-V) of dipyridinium dithioacetate can also be examined by using Scanning Tunneling Spectroscopy(STS). From the results of the measurement of the current-voltage(I-V), the property of Negative Differential Resistance(NDR) that shows the decreases of current according to the increases of voltage is observed. We found the NDR voltage of the dipyridinium dithioacetate is -1.42 V(negative region) and 1.30 V(positive region), respectively.