• The Transactions of The Korean Institute of Electrical Engineers
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• 제66권11호
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• pp.1591-1599
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• 2017

In power electronics applications which switching frequency is below audible frequency, the acoustic noise and vibration design of magnetics are as important as the efficiency. In the case of the powder core, which is widely used in grid-connected inverters, many researches have been progressed in terms of efficiency. However, there are only few research have been progressed related with acoustic noise and vibrations. In this paper, the Sendust(Fe-Si-Al) powder core material which has low magnetostriction and low core loss is analyzed in terms of acoustic noise and vibration induced by Maxwell force and magnetostriction. Three building structures such as, rectangular, toroidal, and oval shape are designed for 4kW grid-connected inverter, because magnetic properties and the audible noises of the inductor are varied by magnetic core building structures. The effects of the Maxwell force and magnetostriction behaviors varied with core shapes are analyzed by finite element method and experiments. In addition, experiment results of the inductor efficiency are presented according to core building structures.

• The Transactions of the Korea Information Processing Society
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• 제7권2호
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• pp.470-476
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• 2000

This paper describes an IP design of a low-power microcontroller using an architecture level design methodology instead of a transistor level. To reduce switching capacitance, the register-toregister data transfer is adopted to frequently used register transfer micro-operations. Also, distributed buffers are proposed to reduce a input data rising edge time. To reduce power consumption without any loss of performance, pipeline processing should be used. In this paper, a 4-stage pipelined datapath being able to process CISC instructions is designed. Designed microcontroller lessens power consumption by 20%. To measure a power consumption, the SYNOPSYS EPIC powermill is used.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제5권4호
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• pp.746-755
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• 2001

This paper proposes a snubber circuit for flying capacitor 3-level inverter and converter. The proposed snubber circuit makes use of Undeland snubber as basic snubber unit. It has such an advantage of Undeland snubber used in the two-level inverter. Compared with conventional RLD/RCD snubber for 3-level inverter and converter, the proposed snubber keeps such good features as fewer number of components, reduction of voltage stress of main switching devices due to low overvoltage, and improved efficiency of system due to low snubber loss. In this paper, the proposed snubber is applied to multilevel flying capacitor inverter and its feature is demonstrated by computer simulation and experimental result.

• The Transactions of the Korean Institute of Power Electronics
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• 제17권5호
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• pp.393-400
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• 2012

The modularized equalizers normally use additional components among the modules in the long series-connected lithium-ion battery string. In these approaches, the overall systems are heavy, bulky, and high-priced. Furthermore, the losses related to additional components decrease the system efficiency. To avoid these problems, a modularized equalizer, which has no additional components among the modules, is required. This paper proposes a novel control scheme using the magnetizing energy of the multi-winding transformer for the module equalization. In this scheme, the high duty cycle is applied to the module where the voltage is higher than the reference voltage and the low duty cycle is applied to the module where the voltage is lower than the reference voltage. Due to the different duty cycle, more electric charges are transferred from high voltage module to the low voltage module during the turn-off switching interval. Using the proposed control scheme, the equalizer system does not suffer from the size, cost, and loss related to the modularization. The experimental results are provided to verify the effectiveness of the proposed modularized equalizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• The Transactions of the Korean Institute of Power Electronics
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• 제6권5호
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• pp.400-409
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• 2001

A new phase-shifted parallel-input/series-output(PISO) dual converter for tush-power step-up applications has been proposed. Since the proposed converter shows a low switch turn-off voltage stress, switching devices with low conduction loss can be employed in order to improve the power conversion efficiency. Moreover, it features a low output capacitor root-mean-square(RMS) current stress, low input current and output voltage ripple contents, and fast control-to-output dynamics compared to its PWM counterpart. In this paper, the operation of the proposed converter is analyzed in detail and its mathematical models and steady-state solutions are presented. A comparative analysis with the conventional PWM PISO dual converter is also provided. To confirm the operation, features, and validity of the Proposed converter, experimental results from an 800W, 24-350Vdc prototype are presented.

• Journal of IKEEE
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• 제12권2호
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Journal of IKEEE
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• 제24권1호
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• pp.260-268
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• 2020

This paper presents the high frequency resonant inverter of class D SEPP(Single-Ended Push Pull) type using LS-ZVS-LSTC, which can reduce the switching losses during the turn-on and turn-off switching time. The analysis of high frequency resonant inverter using LS-ZVS-LSTC(Low-loss Turn-off Snubber Capacitor) proposed in this paper is described in general by adopting the normalized parameters. The operating characteristics of the proposed high frequency resonant inverter were also evaluated by using the control parameters such as the normalized control frequency(μ), the normalized load time constant(τ), the coupling factor(κ) and so on. Based on the characteristic values through the characteristics of evaluation, an example of the design method of the 1.8[kW] class D SEPP type high frequency inverter is suggested, and the validity of the theoretical analysis is verified using the experimental data.

• The Transactions of the Korean Institute of Power Electronics
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• 제7권1호
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• pp.30-40
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• 2002

This paper studies the electronic ballast development for 250w MH lamps. We have improved the input power factor using a PFC IC. To provide the rating voltage required In the lamps, we have used the buck type dc-dc converter By this method, the stress of switching devices in inverter can be reduced. The inverter is the Full-Bridge type. To eliminate the acoustic resonance phenomena of MH lamps, we have added the high frequency sinewave voltage to the low frequency square-wave voltage to the lamp. We hove developed the igniter circuit using the L, C devices. We could control dimming of the lamp by varying the output voltage of the buck converter. The time of illuminating lamps and luminous intensity could be adjusted by season and time band. The buck converter output voltage can be controlled and the no load and over current situation were Protected by the development of the microprocessor Program.

• Journal of IKEEE
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• 제21권1호
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.