• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.993-996
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• 2001

In the composition of 0.16BaO-0.15(Nd$\_$0.87/,Bi$\_$0.13/)$_2$O$_3$-0.69TiO$_2$$.$Glass [EG-2782] 3wt% addition sintered at 1080$^{\circ}C$, we could obtained microwave properties of dielectric constant $\varepsilon$$\_$r/= 80.1, quality factor Q ${\times}$ f = 810 (at 3.5 GHz]) and temperature coefficient of resonant frequency $\tau$$\_$f/ = -1.3 [ppm/$^{\circ}C$]

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1083-1089
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• 2008

We studied the dielectric characteristics of low-k SiOCH thin films by Ellipsometry. The SiOCH thin films were prepared by deposition of BTMSM precursors on p-Si wafer by CCP-PECVD method. The nano-porous structural organic/inorganic hybrid-type of SiOCH thin films correlated directly to the formation of low dielectrics close to pore(k=1). The structural groups including highly dense pores in SiOCH thin films originated the anisotropic geometry type of network structure directing to complex refractive characteristics of SiOCH single layer on the p-Si wafer. The linearly polarized beam of Xe-ramp in the range from 190 nm to 2100 nm introduced to the surface of SiOCH thin film, and the reflected beam was Elliptically polarized by complex refractive coefficients of SiOCH dipole groups. The amplitude variation $\Psi$ and phase variation $\Delta$ of the relative reflective coefficients between perpendicular and parallel components to the incident plane were measured by Ellipsometry. The complex optical constants n and k as well as the dielectric constant and thickness of SiOCH thin films were driven by the measured value of $\Psi$ and $\Delta$.

• 한국응용과학기술학회지
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• 제35권3호
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• pp.676-682
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• 2018

주파수 변화에 따른 에폭시 복합체의 전기적 특성을 알아보기 위하여 온도 범위 $20[^{\circ}C]$, $100[^{\circ}C]$, $140[^{\circ}C]$, 주파수 범위 30[Hz]~3[MHz] 사에서 유전율 및 유전손실을 측정하였다. 저주파 영역에서 유전분산과 유전 손실이 나타나고 있음을 확인하였다. 또한 고온 영역에서는 충진제의 영향으로 유전율이 감소하는 것을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• 제9권3호
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• pp.91-95
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• 2008

In this study, in order to develop the composition ceramics for low loss multilayer piezoelectric actuator application, $Pb(Zn_{1/2}W_{1/2})O_3-Pb(Mn_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3$ (abbreviated as PZW-PMN-PZT)ceramics according to the amount of $MnO_2$ addition were fabricated using two-stage calcinations method. And also, their dielectric and piezoelectric properties were investigated. At the 0.2 wt% $MnO_2$ added PZW-PMN-PZT ceramics sintered at $930^{\circ}C$, density, electromechanical coupling factor $k_p$, dielectric constant ${\varepsilon}_r$, piezoelectric $d_{33}$ constant and mechanical quality factor $Q_m$ showed the optimum value of $7.84g/cm^3$, 0.543, 1,392, 318.7 pC/N, 1,536, respectively for low loss multilayer ceramics actuator application.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.61.1-61
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• 2003

Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.45-45
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• 1996

• 한국재료학회지
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• 제2권4호
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• pp.263-269
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• 1992

본 실험에서는 낮은 음의 온도계수를 갖는 저온 소결 유전체에 대해 연구하였다. 새로 개발된 재료의 조성은 Ti$O_2$(100-X) CuOx(X=1~5wt%)에 미량의 Mn$O_2$를 첨가 하였다. CuO를 첨가하지 않은 경우에는 저온 (90$0^{\circ}C$) 에서 소결이 진행되지 않았다. CuO 함량이 증가할수록 저온에서 소결이 가능하였으나, 유전율이 낮아지고 유전손실은 증가 하였다. Mn$O_2$를 0.6wt% 첨가한 경우 유전율과 Q값이 가장 높게 나타났다.

• 한국결정성장학회지
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• 제12권6호
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• pp.292-298
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• 2002

비정질 코디어라이트에 판상형 알루미나를 첨가하여 미세구조를 제어함으로써 저 유전율과 저 열팽창계수를 갖는 세라믹 기판재료를 연구하였다. 판상형 알루미나는 4종류의 크기를 갖는 분말을 사용하였으며, 그 첨가량을 달리하며 각 조성의 기계적 성질, 유전상수, 및 열팽창계수의 거동을 고찰하였다. 슬립 케스팅 후 $1300^{\circ}C$에서 2시간 동안 소결된 시편은 순수한 코디어라이트에 비하여 80 MPa의 향상된 강도치를 보였으며, 실리콘 칩의 열팽창계수에 접근하는 $3.5 \times 10^{-6}/^{\circ}C$의 열팽창계수 값을 보였다. 판상형 알루미나의 특성에 의해 형성된 소결체 기지내의 고립기공은 알루미나의 첨가에 의해 발생되는 유전상수의 증가를 억제시켰으며, 1 MHz에서 5.0의 유전상수 값을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.625-629
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• 1999

In this study, in order to develop high sensitivity and low noise acoustic emission sensor, we manufactured the Pb(Zr, Ti)O$_3$ ceramics with the addition of WO$_3$ wt% to search for its required characteristics. Dielectric constant was increased as a function of the increase of WO$_3$ wt%. The Pb(Zr, Ti)O$_3$ (EC-65) ceramics added with 0.1lwt% WO$_3$ showed excellent dielectric constant and piezoelectric constants of 1931 and 199.55$\times$10$^{-12}$ (C/N), respectively. Accordingly It was shown as the composition ceramics suitable for AE sensor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.127-130
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• 2002

In this study, development of a new LTCC material using a non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. For LTCC application, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, CaWO$_4$ was tamed out the suitable LTCC material. CaWO$_4$ can be sintered up to 98% of full density at 1200$^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 10.15, 62880GHz, and -27.8ppm/$^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, 0.5∼1.5 wt% LiF were added to CaWO$_4$. LiF addition reduced the sintering temperature/time down to 800$^{\circ}C$/10∼30min due to the reactive liquid phase sintering. Dielectric constant lowered from 10.15 to 9.38 and Q x fo increased up to 92000GHz with increasing LiF content.