• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.48-48
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• 2002

It is generally accepted that ultra low dielectric interlayer dielectric materials (k < 2.2) will be necessary for ULSI advanced microelectronic devices after 2003, according to the International Technology Roadmap for Semiconductors (ITRS) 2000. A continuous reduction of dielectric constant is believed to be possible only by incorporating nanopores filled with air (k = 1.0) into electrically insulating matrices such as poly(methyl silsesquioxane) (PMSSQ). The nanopo.ous low dielectric films should have excellent material properties to survive severe mechanical stress conditions imposed during the advanced semiconductor processes such as chemical mechanical planarization process and multilayer fabrication. When air is incorporated into the films for lowering k, their mechanical strength has inevitably to be sacrificed. To minimize this effect, the nanopores are controlled to exist in the film as closed cells. The micromechanical properties of the nanoporous thin films are considered more seriously than ever, particularly for ultra low dielectric applications. In this study, three approaches were made to design and develop nanoporous low dielectric films with improved micromechanical properties: 1) wall density increase of nanoporous organosilicate film by copolymerization of carbon bridged comonomers; 2) incorporation of sacrificial phases with good miscibility; 3) selective surface modification by plasma treatment. Nanoporous low-k films were prepared with copolymerized PMSSQ and star-shaped sacrificial organic molecules, both of which were synthesized to control molecular weight and functionality. The nanoporous structures of the films were observed using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, atomic force microscopy, and positronium annihilation lifetime spectroscopy(PALS). Micromechanical characterization was performed using a nanoindentor to measure hardness and modulus of the films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.198-198
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• 2010

The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• 한국세라믹학회지
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• 제37권5호
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• pp.511-515
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• 2000

The effect of Ba2+ ion dissolution with different pH and amount of PAA on microstructural changes of green and sintered bodies and its electrical properties was studied in aqueous nano-size BaTiO3 slurry system. The dissolution of Ba2+ was least at strong base, pH 10.8 and by addition of amount of 0.15 wt% PAA. The green body with the lowest of dissolution of Ba2+ at pH 10.8 and 0.15 wt% PAA had minimum values of average pore size, 40nm and shown high increase of sintered density. The compact sintered at 125$0^{\circ}C$ for 2 hr with highest Ba2+ dissolution had low density and dielectric constant due to abnormal grian growth. However, the sintered body with the lowest Ba2+ dissolution had high sintered density and then shown high dielectric constant.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.28-32
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• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

• 한국세라믹학회지
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• 제26권6호
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• pp.755-762
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• 1989

A pyroelectric ceramic material based on Pb(Sn1/2Sb1/2)O3 modified PZT system is studied as a function of the amount of Pb(Sn1/2Sb1/2)O3 and PbTiO3. With increasing the Pb(Sn1/2Sb1/2)O3 amount the dielectric constant increases up to 10mol% and then decreases, but the pyroelectric coefficient decreases and as the PbTiO3 contents increase in the 10mol% added PZT system, the dielectric constant increases but the infrared sensitivity decreases. The good pyroelectric material has low dielectric constant and no pyrochlore phase, but does not depend in the amount of remanent dipole, and its composition sites around ferroelectric-to-antiferroelectric phase boundary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.284-284
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• 2007

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

• Journal of electromagnetic engineering and science
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• 제11권1호
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• pp.1-4
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• 2011

In this letter, we propose a novel tag antenna that has low performance degradation with nearby dielectric material. We obtained a stable reading performance and a broad matching bandwidth on nearby dielectric materials by employing a T-matching network with thick line width and capacitively slot-loaded arms. We then built the proposed antenna and measured the tag sensitivity to examine the reading characteristics with nearby dielectric materials. The measured results clearly demonstrate stable tag sensitivity with various nearby dielectric materials, such as foam, acrylic-plastic, glass, and ceramic plates. To more closely observe the antenna characteristics with nearby dielectric materials, we also examined the impedance variation and surface current distribution with respect to the dielectric constant of nearby target objects, which ranged from $1{\times}{\varepsilon}_0$ to $16{\times}{\varepsilon}_0$.

• 한국세라믹학회지
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• 제34권2호
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• pp.123-130
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• 1997

본 연구에서는 유전상수가 크고, 유전체 손실이 적으며, 사용온도 범위에서 정전용량 변화율(TCC : tem-perature coefficient of capacitance)이 작고, 고압에 견딜 수 있는 재료를 개발하기 위하여 중고압용 capacitance의 기본재료로써 (Sr.Pb.Ca)TiO3-xBi2O3.3TiO2 계에서 Bi2O3.3TiO2의 mol.%를 5, 6, 7, 8, 9 mol.%로 변화시켰으며, 그 결과 고용한계 함량이 6mol.%이며, 6mol.%이상에서는 침상구조의 증가에 기인하여 유전율이 다시 감소하는 경향을 보였다. dopant로써 SiO2, Nb2O3, MnO2를 선정하여 첨가한 결과, MnO2를 첨가한 것이 유전성질이 가장 우수하였으며, MnO2의 함량이 0, 0.15, 0.3, 0.45 wt.% 증가함에 따라서 유전율의 감소와 동시에, TOC특성의 급격한 향상을 가져왔다.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.766-770
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• 2007

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator, $0.07Pb(Mn_{1/3}Nb_{2/3})O_3-xPb(Ni_{1/3}Nb_{2/3})O_3-(0.93-x)Pb(Zr,Ti)O_3$ ceramics system were fabricated using $Li_2CO_3-Bi_2O_3-CuO$ sintering aids and the specimens were sintered at $930^{\circ}C$. Thereafter, their piezoelectric and dielectric characteristics were investigated according to the amount of PNN substitution. At 9 mol% PNN substitution, density, electromechanical coupling factor ($k_p$), dielectric constant, mechanical quality factor ($Q_m$) and piezoelectric constant ($d_{33}$) showed the optimum value of $7.86g/cm^3$, 0.60, 1640, 1323 and 387 pC/N, respectively. It is considered that these values are suitable for piezoelectric divece application such ad multilayer piezoelectric actuator and ultrasonic vibrator with pure Ag internal electrode.

• Journal of Korean Vacuum Science & Technology
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• 제7권2호
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• pp.33-38
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• 2003

Fluorinated amorphous carbon thin films (a-C:F) for the use of low dielectric constant intermetallic layer dielectrics are deposited by plasma enhanced chemical vapor deposition with $C_4$F$_{8}$ and Si$_2$H$_{6}$/He gas mixture as precursors. To characterize and improve film properties, we changed various conditions such as deposition temperature, and RF power, and we measured the thickness and refractive indexes and FT-IR spectrum before and after annealing. At low temperatures the film properties were very poor although the growth rate was very high. On the other hand, the growth rate was low at high temperature. The growth rate increased in accordance with the deposition pressure. The dielectric constants of samples were in the range of 1.5∼5.5∼5.