Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.198-198
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- 2010
A study of optical characteristics correlated with low dielectric constant of SiOCH thin films through Ellipsometry
Ellipsometry를 이용한 저 유전 상수를 갖는 SiOCH박막의 광학특성 연구
-
Park, Yonh-Heon
(Korea Air Force Academ)
;
- Hwang, Chang-Su (Korea Air Force Academ) ;
- Kim, Hong-Bae (CheongJu University)
- Published : 2010.06.16
Abstract
The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.