• Title/Summary/Keyword: Light-Emitting Diodes (LEDs)

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Growth of InGaN/AlGaN heterostructure by mixed-source HVPE with multi-sliding boat system (Multi-sliding boat 방식을 이용한 혼합소스 HVPE에 의한 InGaN/AlGaN 이종 접합구조의 성장)

  • Jang, K.S.;Kim, K.H.;Hwang, S.L.;Jeon, H.S.;Choi, W.J.;Yang, M.;Ahn, H.S.;Kim, S.W.;Yoo, J.;Lee, S.M.;Koike, M.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.4
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    • pp.162-165
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    • 2006
  • The selective growth of InCaN/AlGaN light emitting diodes was performed by mixed-source hydride vapor phase epitaxy (HVPE). In order to grow the InGaN/AlGaN heterosturcture consecutively, a special designed multi-sliding boat was employed in our mixed-source HVPE system. Room temperature electroluminescence spectum of the SAG-InGaN/AlGaN LED shows an emission peak wavelength of 425 nm at injection current 20 mA. We suggest that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitrides LEDs.

Adjunctive effect of 470-nm and 630-nm light-emitting diode irradiation in experimental periodontitis treatment: a preclinical study

  • Dongseob Lee;Jungwon Lee;Sun-Hee Ahn;Woosub Song;Ling Li;Yang-Jo Seol;Yong-Moo Lee;Ki-Tae Koo
    • Journal of Periodontal and Implant Science
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    • v.54 no.1
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    • pp.13-24
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    • 2024
  • Purpose: This study investigated the adjunctive effect of light-emitting diodes (LEDs) in the treatment of experimental periodontitis. Methods: Experimental periodontitis was induced by placing ligatures around the mandibular second, third, and fourth premolars of 6 beagles for 3 months. After ligature removal, periodontitis progressed spontaneously for 2 months. The animals' hemimandibles were allocated among the following 3 groups: 1) no treatment (control), 2) scaling and root planing (SRP), and 3) SRP with LED irradiation at 470-nm and 630-nm wavelengths (SRP/LED). The probing pocket depth (PPD) and gingival recession (GR) were measured at baseline, 6 weeks, and 12 weeks. The clinical attachment level (CAL) was calculated. After 12 weeks, histological and histomorphometric assessments were performed. The distances from the gingival margin to the apical extent of the junctional epithelium (E) and to the connective tissue (CT) attachment were measured, as was the total length of soft tissue (ST). Results: PPD and CAL increased at 12 weeks compared with baseline in the control group (6.31±0.43 mm to 6.93±0.50 mm, and 6.46±0.60 mm to 7.61±0.78 mm, respectively). PPD and CAL decreased at 12 weeks compared with baseline in the SRP group (6.01±0.59 to 4.81±0.65 mm, and 6.51±0.98 to 5.39±0.93 mm, respectively). PPD and CAL decreased at 12 weeks compared with baseline in the SRP/LED group (6.03±0.39 to 4.46±0.47 mm, and 6.11±0.47 to 4.78±0.57 mm, respectively). The E/ST and CT/ST ratios significantly differed among the 3 groups (P<0.05). The clinical parameters and histologic findings demonstrated that 470-nm and 630-nm wavelength LED irradiation accompanying SRP could improve treatment results. Conclusions: Within the study limitations, 470 nm and 630 nm wavelength LED irradiation might provide additional benefits for periodontitis treatment.

Application of White Light Emitting Diodes to Produce Uniform Scions and Rootstocks for Grafted Fruit Vegetable Transplants (과채류 접목 시 균일한 접수와 대목 생산을 위한 백색 LED의 적용)

  • Hwang, Hyunseung;Chun, Changhoo
    • Journal of Bio-Environment Control
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    • v.31 no.1
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    • pp.14-21
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    • 2022
  • Uniform scions and rootstocks should be produced to ensure grafting success. Light quality is an important environmental factor that regulates seedling growth. The effects of warm- and cool-white light emitting diode (LED) ratios on seedling growth were investigated. Scions and rootstocks of cucumber, tomato, and watermelon were grown in a closed transplant production system using LED as the sole lighting source. The LED treatments were W1C0 (only warm-white), W1C1 (warm-white: cool-white = 1:1), W3C1 (warm-white: cool-white = 3:1), and W5C2 (warm-white: cool-white = 5:2). The seedlings grown in W1C1 had the shortest hypocotyls, and the seedlings grown in W1C0 had the longest hypocotyls among the three tested vegetables. The hypocotyls of watermelon scions, watermelon rootstocks, and tomato rootstocks were shortest in W1C1, followed by those in W3C1, W5C2, and W1C0, but there was no significant difference between W3C1 and W5C2, which remained the same as the ratio of cool-white LEDs increased. In addition, tomato scions had the first and second longest hypocotyls in W1C0 and W3C1, respectively, and the shortest hypocotyls in W5C2 and W1C1, along with W5C2 and W1C1, although the difference was not significant. The stem diameter was highest in W1C0 except for tomato seedlings and rootstocks of watermelon. The shoot fresh weight of scions and rootstocks of cucumber and watermelon and the root fresh weight of cucumber scions were lowest in W1C1. These results indicated that different ratios of LED lighting sources had a strong effect on the hypocotyl elongation of seedlings.

Growth and characterization of MgZnO grown on R-plane sapphire substrate by plasma-assisted molecular beam epitaxy

  • Han, Seok-Kyu;Kim, Jung-Hyun;Hong, Soon-Ku;Lee, Jae-Wook;Lee, Jeong-Yong;Kim, Ho-Jong;Song, Jung-Hoon;Yao, Takafumi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.114-114
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    • 2009
  • ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

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Structural characterization of nonpolar GaN using high-resolution transmission electron microscopy (HRTEM을 이용한 비극성 GaN의 구조적 특성 분석)

  • Kong, Bo-Hyun;Kim, Dong-Chan;Kim, Young-Yi;Ahn, Cheol-Hyoun;Han, Won-Suk;Choi, Mi-Kyung;Bae, Young-Sook;Woo, Chang-Ho;Cho, Hyung-Koun;Moon, Jin-Young;Lee, Ho-Seong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.23-23
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    • 2009
  • GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

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Luminescence Characteristics of Sr3MgSi2O8:Eu Blue Phosphor for Light Emitting Diodes (LED용 Sr3MgSi2O8:Eu청색 형광체의 발광특성)

  • 최경재;박정규;김경남;김창해;김호건
    • Journal of the Korean Ceramic Society
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    • v.41 no.8
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    • pp.573-577
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    • 2004
  • We have synthesized a Eu$^{2+}$-activated Sr$_3$MgSi$_2$ $O_{8}$ blue phosphor and investigated an attempt to develop blue LEDs by combining it with a InGaN blue LED chip (Len=405 nm). The InGaN-based Sr$_3$MgSi$_2$ $O_{8}$:Eu LED Lamp shows two bands at 405 nm and 460 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the Sr$_3$MgSi$_2$ $O_{8}$:Eu phosphor. The 460 m emission band is ascribed to a radiative recombination of Eu$^{2+}$ impurity ions in the Sr$_3$MgSi$_2$ $O_{8}$ host matrix. As a consequence of a preparation of W blue LED Lamp using the Sr$_3$MgSi$_2$ $O_{8}$:Eu blue phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/blue phosphor(1/0,202). At this time, the CIE chromaticity was x=0.1417 and y=0.0683.

Plant Growth and Ascorbic Acid Content of Spinacia oleracea Grown under Different Light-emitting Diodes and Ultraviolet Radiation Light of Plant Factory System (식물공장시스템의 발광다이오드와 UVA 광원 하에서 자란 시금치 생육 및 아스코르브산 함량)

  • Park, Sangmin;Cho, Eunkyung;An, Jinhee;Yoon, Beomhee;Choi, Kiyoung;Choi, Eunyoung
    • Journal of Bio-Environment Control
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    • v.28 no.1
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    • pp.1-8
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    • 2019
  • The study aimed to determine effects of light emitting diode (LED) and the ultraviolet radiation (UVA) light of plant factory on plant growth and ascorbic acid content of spinach (Spinacia oleracea cv. Shusiro). Plants were grown in a NFT (Nutrient Film Technique) system for 28 days after transplanting with fluorescent light (FL, control), LEDs and UVA (Blue+UVA (BUV), Red and Blue (R:B(2:1)) + UVA (RBUV), Red+UVA (RUV), White LED (W), Red and Blue (R:B(2:1)), Blue (B), Red (R)) under the same light intensity ($130{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) and photoperiod (16/8h = day/night). All the light sources containing the R (R, RB, RUV, and RBUV) showed leaf epinasty symptom at 21 days after transplanting (DAT). Under the RUV treatment, the lengths of leaf and leaf petiole were significantly reduced and the leaf width was increased, lowering the leaf shape index, compared to the R treatment. Under the BUV, however, the lengths of leaf and leaf petiole were increased significantly, and the leaf number was increased compared to B. Under the RBUV treatment, the leaf length was significantly shorter than other treatments, while no significant difference between the RBUV and RB for the fresh and dry weights and leaf area. Dry weights at 28 days after transplanting were significantly higher in the R, RUV and BUV treatments than those in the W and FL. The leaf area was significantly higher under the BUV treatment. The ascorbic acid content of the 28 day-old spinach under the B was significantly higher, followed by the BUV, and significantly lower in FL and R. All the integrated data suggest that the BUV light seems to be the most suitable for growth and quality of hydroponically grown spinach in a plant factory.

Post-harvest LED and UV-B Irradiation Enhance Antioxidant Properties of Asparagus Spears (수확 후 LED와 UV-B 조사에 의한 아스파라거스 순의 항산화 기능 향상)

  • Yoo, Nam-Hee;Jung, Sun-Kyun;Lee, Chong Ae;Choi, Dong-Geun;Yun, Song Joong
    • Horticultural Science & Technology
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    • v.35 no.2
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    • pp.188-198
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    • 2017
  • Asparagus (Asparagus officinalis L.) spears were treated with white (color temperature 4,500 k), blue (peak 450 nm), and red (peak 660 nm) light-emitting diodes (LEDs) at a photosynthetic photon flux density (PPFD) of $200{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ for 12 h, and UV-B (280 nm) at 0.5 kJ or 1.0 kJ to determine the effect on agronomic characteristics, antioxidant phytochemicals, and antioxidant activity. The fresh weight, length, and width of spears were not affected by light quality treatments. The free sugars and chlorophyll contents were increased by 9 and 41%, respectively in the UV-0.5 kJ treatments. Among the antioxidant phytochemicals (vitamin C, total phenol, rutin, and total flavonoid), vitamin C was most greatly affected by the light treatments. Vitamin C content was significantly increased in asparagus spears subjected to the white (114%), red (137%), and UV-0.5 kJ(127%) treatments compared to the control. By contrast, rutin, total phenol, and total flavonoid content were increased only in samples subjected to the red and UV-0.5 kJ treatment. Furthermore, antioxidant activity, as measured by DPPH (2,2-diphenyl-1-picrylhydrazyl) radical scavenging activity, increased in white, red, and UV-0.5 kJ treatments by about 43, 41, and 43%, respectively, compared to the control. These results suggest that postharvest treatment of asparagus spears with red light at $200{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ for 12 h or with UV-B (280 nm) at 0.5 kJ could enhance the functional quality of the asparagus spears by increasing the content of phytochemicals like vitamin C, rutin, total phenolics, and total flavonoids.

R-plane 사파이어의 경사각에 따른 비극성 a-plane GaN 성장 거동 고찰

  • Park, Seong-Hyeon;Park, Jin-Seop;Mun, Dae-Yeong;Yu, Deok-Jae;Kim, Jong-Hak;Kim, Nam-Hyeok;Kim, Jeong-Hwan;Gang, Jin-Gi;Yun, Ui-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.151-152
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    • 2010
  • 극성 [0001] 방향으로 성장 된 질화물 기반의 LEDs (light emitting diodes) 는 분극현상에 의해 발생하는 강한 내부 전기장의 영향을 받게 된다. 이러한 내부 전기장은 양자우물 내의 전자와 정공의 공간적 분리를 야기하고 quantum confined Stark effect (QCSE) 에 의한 발광 파장의 적색 편이가 발생하며 양자효율의 저하를 가져오게 된다. 이러한 문제를 해결하기 위해 양자 우물구조를 GaN 의 m-plane (100) 이나 a-plane (110) 등 비극성면 위에 성장하려는 시도를 하고 있다. 그러나 비극성면의 비등방성 (anisotropy) 으로 인하여 결정성이 높은 비극성 GaN을 성장하는 데에는 많은 어려움이 있다. 비극성 a-plane GaN 의 결정성과 표면 거칠기의 향상을 위해 경사각을 가지는 r-plane 사파이어를 기판으로 이용하는 연구들이 많이 진행되어 있다 [1-4]. 그러나 r-plane 사파이어 기판의 경사각과 표면의 pit 형성에 관한 상관관계의 체계적인 연구는 상대적으로 많이 진행되지 않았다. 본 연구에서는 경사각을 가진 r-plane 사파이어 기판에 유기금속화학증착법을 (MOCVD) 이용하여 a-plane GaN 을 성장하였으며, 성장 시 기판의 경사각이 a-plane GaN의 성장 거동 및 표면형상에 미치는 영향을 분석하였다. 본 실험에서는r-plane에서 m-axis방향으로 0도에서 -0.65도의 경사각을 가지는 r-plane 사파이어 기판을 이용하였다. a-plane GaN 성장에는 고온 GaN 핵 형성층을 (nucleation layer) 이용하는 2단계 성장 법이 사용되었다 [5]. -0.37도 보다 크기가 큰 경사각을 가진 r-plane 사파이어에 성장된 a-plane GaN의 표면에는 수 ${\mu}m$ 크기의 삼각형 형태의 pit이 형성되었다. 사파이어의 경사각이 -0.37도에서 -0.65도로 증가하였을 경우에, GaN의 m방향 X-ray 록킹커브 반치폭은1763 arcsec에서 1515 arcsec로 감소하였으나 표면에 삼각형 pit의 밀도는 103 cm-2 이하에서 $2{\times}106$ cm-2으로 증가하였다. 이러한 r -plane 사파이어 기판의 경사각의 차이로 표면에 pit이 발생과 결정성변화의 원인을 확인하기 위해서, 여러가지 다른 경사각을 가진 사파이어 기판의 표면에 성장된 핵 형성층의 표면 양상을 확인하였다. 발표에서는 경사각의 차이에 따른 기판 표면에서의 원자 step 구조와 GaN 의 핵 형성 간의 상관관계에 대하여 구체적으로 논의할 것이다.

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Recent Developments in Quantum Dot Patterning Technology for Quantum Dot Display (양자점 디스플레이 제작을 위한 양자점 패터닝 기술발전 동향)

  • Yeong Jun Jin;Kyung Jun Jung;Jaehan Jung
    • Journal of Powder Materials
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    • v.31 no.2
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    • pp.169-179
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    • 2024
  • Colloidal quantum dot (QDs) have emerged as a crucial building block for LEDs due to their size-tunable emission wavelength, narrow spectral line width, and high quantum efficiency. Tremendous efforts have been dedicated to improving the performance of quantum dot light-emitting diodes (QLEDs) in the past decade, primarily focusing on optimization of device architectures and synthetic procedures for high quality QDs. However, despite these efforts, the commercialization of QLEDs has yet to be realized due to the absence of suitable large-scale patterning technologies for high-resolution devices., This review will focus on the development trends associated with transfer printing, photolithography, and inkjet printing, and aims to provide a brief overview of the fabricated QLED devices. The advancement of various quantum dot patterning methods will lead to the development of not only QLED devices but also solar cells, quantum communication, and quantum computers.