Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
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- Pages.114-114
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- 2009
Growth and characterization of MgZnO grown on R-plane sapphire substrate by plasma-assisted molecular beam epitaxy
- Han, Seok-Kyu (Chungnam National University) ;
- Kim, Jung-Hyun (Chungnam National University) ;
-
Hong, Soon-Ku
(Chungnam National University) ;
- Lee, Jae-Wook (KAIST) ;
-
Lee, Jeong-Yong
(KAIST) ;
- Kim, Ho-Jong (Kongju National University) ;
- Song, Jung-Hoon (Kongju National University) ;
- Yao, Takafumi (Tohoku University)
- Published : 2009.11.12
Abstract
ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved.
Keywords
- Zinc oxide;
- Molecular beam epitaxy;
- Zinc compound;
- Characterization;
- Semiconductiong II-VI materials