Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
- /
- Pages.115-115
- /
- 2009
Effects of oxidized CrN buffer layer on the growth of epitaxial ZnO film on Si(111) by Plasma Assisted Molecular Beam Epitaxy
- Kim, Jung-Hyun (Chungnam National University) ;
- Han, Seok-Kyu (Chungnam National University) ;
-
Hong, Soon-Ku
(Chungnam National University)
;
- Lee, Jae-Wook (KAIST) ;
-
Lee, Jeong-Yong
(KAIST)
;
- Song, Jung-Hoon (Kongju National University) ;
- Yao, Takafumi (Tohoku University)
- Published : 2009.11.12
Abstract
Epitaxial ZnO film was grown on Si(111) substrate with oxidazed CrN buffer by plasma-assisted molecular beam epitaxy (PAMBE). The growth and structural properties are investigated. The single crystalline growth was revealed by in-situ RHEED analysis. Crystalline quality of ZnO film grown on oxidized CrN buffer was investigated by the X-ray rocking curves. The FWHMs of (0002) XRCs was