Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth of InGaN/AlGaN heterostructure by mixed-source HVPE with multi-sliding boat system

Multi-sliding boat 방식을 이용한 혼합소스 HVPE에 의한 InGaN/AlGaN 이종 접합구조의 성장

  • Jang, K.S. (Department of Applied Sciences, Korea Maritime University) ;
  • Kim, K.H. (Department of Applied Sciences, Korea Maritime University) ;
  • Hwang, S.L. (Department of Applied Sciences, Korea Maritime University) ;
  • Jeon, H.S. (Department of Applied Sciences, Korea Maritime University) ;
  • Choi, W.J. (Department of Applied Sciences, Korea Maritime University) ;
  • Yang, M. (Department of Applied Sciences, Korea Maritime University) ;
  • Ahn, H.S. (Department of Applied Sciences, Korea Maritime University) ;
  • Kim, S.W. (Department of Physics, Andong National University) ;
  • Yoo, J. (Samsung Electro-Mechanics Co., Ltd.) ;
  • Lee, S.M. (Samsung Electro-Mechanics Co., Ltd.) ;
  • Koike, M. (Samsung Electro-Mechanics Co., Ltd.)
  • 장근숙 (한국해양대학교 반도체물리학과) ;
  • 김경화 (한국해양대학교 반도체물리학과) ;
  • 황선령 (한국해양대학교 반도체물리학과) ;
  • 전헌수 (한국해양대학교 반도체물리학과) ;
  • 최원진 (한국해양대학교 반도체물리학과) ;
  • 양민 (한국해양대학교 반도체물리학과) ;
  • 안형수 (한국해양대학교 반도체물리학과) ;
  • 김석환 (안동대학교 물리학과) ;
  • 유재은 (삼성전기) ;
  • 이수민 (삼성전기) ;
  • Published : 2006.08.31
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Abstract

The selective growth of InCaN/AlGaN light emitting diodes was performed by mixed-source hydride vapor phase epitaxy (HVPE). In order to grow the InGaN/AlGaN heterosturcture consecutively, a special designed multi-sliding boat was employed in our mixed-source HVPE system. Room temperature electroluminescence spectum of the SAG-InGaN/AlGaN LED shows an emission peak wavelength of 425 nm at injection current 20 mA. We suggest that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitrides LEDs.

혼합소스 HVPE(hydride vapor phase epitaxy) 방법으로 InGaN/AlGaN의 이종접합구조(heterostructure)의 LED (light emitting diode)를 선택성장(SAG : selective area growth)하였다. InGaN/AlGaN 이종접합구조를 혼합소스 HVPE로 연속 성장하기 위하여 새로운 디자인의 multi-sliding boat를 도입하였다. SAG-InGaN/AlGaN LED의 상온 EL(electroluminescence) 특성은 주입전류가 20mA일 때 중심파장은 425nm였다. Multi-sliding boat를 이용한 혼합소스 HVPE 방법이 질화물 반도체 LED를 성장하는 유용한 방법이 될 수 있음을 확인하였다.

Keywords

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