• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.22-23
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• 2000

GaAs/AlGaAs나 InGaAs/InGaAsP와 같은 반도체 기판을 이용한 전계광학 광변조기는 LD나 SOA와 같은 광소자와 단일기판 집적이 가능하고 낮은 chirping과 높은 변조대역폭을 갖는 외부광변조기로서의 장점으로 인하여 마이크로파 대역의 초고속광통신소자로 각광을 받아왔다. 특히 진행파의 속도가 정합된 traveling-wave 전극 구조를 갖는 경우 변조대역폭은 30-400Hz에 달하고 있다$^{(1)}$ . 그러나 한편으로는 반도체의 전계광학계수(electro-Optic Coefficient)가 LiNbO$_3$에 비해 10분의 1정도로 작아 상대적으로 동작전압이 커지는 단점이 대두되며 실제 구동전압이 수십 V에 이르고 있다. 이런 단점을 극복하기 위하여 p-i-n 구조를 이용하여 전계 집속도를 높이는 방법이 제안되어 동작전압이 2 V/mm 정도까지 감소하였다$^{(2)}$ . 본 논문에서는 이와 같은 반도체 전계광학 광변조기에서의 소신호 및 대신호 광변조특성을 분석함으로써 보다 높은 변조대역폭과 보다 낮은 동작전압을 갖는 구조를 연구하였다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.218-218
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• 2006

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.159-161
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• 2005

We report the selective area bandgap tuning of multiple quantum well structures by an impurity free vacancy induced quantum well intermixing technique. A 3dB waveguide directional coupler was fabricated in the disordered section of an intermixed quantum well sample as a demonstration of photonic device applications.

• Economic and Environmental Geology
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• v.46 no.5
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• pp.375-390
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• 2013

The Kenticha rare-element (Ta-Li-Nb-Be) mineralized zone is located in ophiolitic fold and thrust complex of southern Ethiopia and was firstly discovered by joint exploration program of Ethiopia-Soviet in 1980s. It includes Dermidama, Kilkele, Shuni Hill, Kenticha, and Bupo pegmatites from south to north. The Kenticha pegmatite intruded parallel to NS-striking serpentinite and talc-chlorite schist, and is exposed approximately 2 km length and 400-700 m width. The Kenticha pegmatite is internally zoned and subdivided into lower quartz-muscovite-albite granite, intermediate muscovite-quartz-albite-microcline pegmatite, and upper spodumene-quartz-albite pegmatite, based on their mineral assemblage. The major, trace elements (e.g., Rb, Li, Nb, Ta, and Ga), and element ratios (e.g., K/Rb, Nb/Ta, Mg/Li, and Al/Ga) suggest that the fractionation and solidification of pegmatite have progressed from the lower towards upper pegmatite. In contrast, unlike general magmatic fractionation, Mg/Li ratios of the Kenticha pegmatite tend to be increased towards the upper pegmatite. It may result from post-magmatic hydrothermal alteration and/or interaction with upper ultramafic rock. Rare-element mineralization in Kenticha pegmatite concentrates on the upper pegmatite, which contains up to 3.0 wt % $Li_2O$, 3,780 ppm Rb, 111 ppm Cs, 1,320 ppm Ta, and 332 ppm Nb. Ore minerals in Kenticha pegmatite mostly include tantalite, spodumene, and lepidolite, and tantalite has an association with coarser quartz-spodumene and relatively fine sacchroidal albite. The tantalite is classified into Mn-tantalite as a function of $Mn^*[Mn/(Mn+Fe)]$ and $Ta^*[Ta/(Ta+Nb)]$ values. Its compositions ($Mn^*$, $Ta^*$, and Nb/Ta) between coarse and fine tantalites are different and the former is strongly enriched in Ta and depleted in Nb compared to latter one. In conclusion, rare-element mineralization in the Kenticha pegmatite may has occurred in the latest stage of magmatic fractionation.

• Journal of Magnetics
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• v.18 no.3
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• pp.240-244
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• 2013

The influences of Gallium doping on the magnetic microstructures and corrosion behaviors of Nd-Fe-B-Ti-C alloys are investigated. The cooling rate for obtaining fully amorphous structure is raised, and the glassforming ability is improved by the Ga addition. The High Resolution Transmission Electron Microscopy image shows that the ${\alpha}$-Fe and $Fe_3B$ soft magnetic phases become granular surrounded by the $Nd_2Fe_{14}B$ hard magnetic phase. The rms and $({\Delta}{\varphi})_{rms}$ value of Nd-Fe-B-Ti-C nanocomposite alloy thick ribbons in the typical topographic and magnetic force images detected by Magnetic Force Microscopy(MFM) decreases with 0.5 at% Ga addition. The corrosion resistances of $Nd_9Fe_{73}B_{12.6}C_{1.4}Ti_{4-x}Ga_x$ (x = 0, 0.5, 1) alloys are enhanced by the Ga addition. It can be attributed to the formation of more amorphous phases in the Ga doped samples.

• Journal of the Mineralogical Society of Korea
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• v.27 no.1
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• pp.31-40
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• 2014

In present study, we geochemically investigated the fresh coal ashes and the saline ash pond of an electric power plant in Korea, which burns imported bituminous coals. The goals are to see the chemical changes of the ash pond by reaction with coal ashes and to investigate the relative leachability of elements from the ashes by reaction with saline waters. For this study, one fresh fly ash, one fresh bottom ash, and 7 water samples were collected. All the ash samples and 2 water samples were analyzed for 55 elements. The results indicated that the fly ashes are enriched with chalcophilic elements such as Cu, Zn, Ga, Ge, Se, Cd, Sb, Au, Pb, and B relative to other elements. On the other hand, concentrations of As, Ba, Co, Ga, Li, Mn, Mo, Sb, U, V, W, and Zr are much higher in the ash pond than those dissolved in the seawater. Ag, Bi, Li, Mo, Rb, Sb, Sc, Se, Sn, Sr, and W show high ratios of elemental concentrations in pond water to those in the fly ash. Our results imply that the leaching of trace elements is regulated by geochemical controls such as solubility and adsorption even though the trace elements are relatively enriched on the ash surfaces after the coal combustion due to their volatilities.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.283-287
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• 2017

Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance ($R_c$) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% $H_2$ and 4% $H_2$ annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of $R_c$ at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest $R_c$ in 4% $H_2$ sample, that is, higher current for 4% $H_2$ sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.407-407
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• 2012

본 연구에서는 p형 전도 특성을 갖는 ZnO 박막 연구를 위해 RF 마그네트론 스퍼터 법으로 Li이 1 at.% 첨가된 ZnO target을 이용하여 ZnLiO 박막을 제작하였다. ZnLiO 박막은 $500{\sim}650^{\circ}C$의 온도 구간에서 $50^{\circ}C$ 단계로 아르곤 가스와 산소의 가스 분압비를 조절하여 성장하였으며, 급속 열처리 법으로 산소분위기에서 3분간 열처리 하였다. 성장된 박막은 전자주사현미경과 x-ray 회절 분광법을 이용하여 구조적 특성을 분석하였고, Hall 효과 측정을 통하여 전기적 특성을 분석하였다. Photoluminescence (PL)법을 통하여 박막의 광학적 특성을 분석하였다. 초기 제작된 ZnLiO 박막은 산소 분위기에서의 급속 열처리과정을 통하여 결정성과 p형 전도 특성이 향상됨을 확인하였다. 이는 열처리 과정을 통해 격자 내 치환되지 못한 Li 원자가 Zn 자리로 치환됨에 따라 격자가 안정화 되며, 억셉터 농도의 증가를 통하여 p-type 전도 특성이 개선된 것으로 보여진다.

• Journal of Microbiology and Biotechnology
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• v.16 no.12
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• pp.1940-1946
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• 2006

The influence of environmental conditions on the ganoderic acid (GA) content in the fungus Ganoderma lucidum was investigated using a one-factor-at-a-time design and orthogonal design. Among the various medium components examined, sucrose, soybean powder or peptone, ferrous sulfate, and pH 6.0 were the most suitable carbon source (factor A), nitrogen source (factor B), mineral source (factor C), and initial pH (factor D), respectively, for the GA content in the one-factor-at-a-time design. According to the orthogonal design, the order of effect for the four factors on the GA content was A>C>D>B. The best level of factor A was $A_2$ (sucrose) with a value of +0.34 mg/100 mg DW. The optimal treatment combination was $A_2B_1C_3D_1$ with which the GA content reached up to 2.63$\pm$0.011 mg/100 mg DW. The interactions between the mineral ion and the nitrogen source, and the mineral ion and the pH were both highly significant (P<0.01). The highest interaction effect was ($B_2{\times}D_2$) with a value of +0.19 mg/100 mg DW, which was higher than the level effect value for $B_2$ (peptone) and D$_2$ (pH 5.0). Therefore, the results proved that interactions between factors cannot be ignored. The results also indicated the importance of the interactions between the factors, which may help to understand the metabolic pathway leading to triterpene biosynthesis and the expression and regulation of the key enzymes involved.