• Journal of Magnetics
• /
• v.7 no.3
• /
• pp.94-97
• /
• 2002

The dependence on nickel oxide thickness and a ferromagnetic layer thickness in unidirectional and isotropic exchange-coupled NiO/NiFe(Fe) bilayer films was investigated by magnetic force microscopy to better understand the relation between magnetic domain structure and exchange biasing at microscopic length scales. As the NiO thickness increased, the domain structure of unidirectional biased films formed smaller and more complex in-plane domains. By contrast, for the isotropically coupled films, large domains generally formed with increasing NiO thickness including a cross type domain with out-of plane magnetization orientation. The density of the cross domain is proportional to exchange biasing field, and the fact that the domain mainly originated from the strongest exchange coupled region was confirmed by imaging in an applied external field during a magnetization cycle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.62-62
• /
• 2009

Electrical properties of SGS-TFT with 5/5 ${\mu}m$ channel width and length which gate insulator is made of 20nm $SiO_2$ and 80nm $SiN_x$ was fabricated and measured at various temperatures. The field-effect mobility was decreased from 86.25 to 80.42 $cm^2/Vs$ and threshold voltage also decreased from -1.5792 to -1.0492 V, when temperature is increased from room temperature to $100^{\circ}C$. Subthreshold swing, also, increased from 0.3212 to 0.4818 V/dec and $I_{on/off}$ ratio decreased from $5.05{\times}10^7$ to $6.93{\times}10^5$.

• Bulletin of the Korean Chemical Society
• /
• v.24 no.8
• /
• pp.1215-1218
• /
• 2003

An analysis of the bonding situation in CaM₂P₂ (M=Fe, Ni) with ThCr₂Si₂ structure is made in terms of DOS and COOP plots. The main contributions to covalent bonding are due to M-P and P-P interactions in both compounds. Particularly, the interlayer P-P bonding by variation in the transition metal is examined in more detail. It turns out that the shorter P-P bonds in CaNi₂P₂ form as a result of the decreasing electron delocalization into ${{\sigma}_p}^*$ of P₂ due to the weaker bonding interaction between the metal d and ${{\sigma}_p}^*$ as the metal d band is falling from Fe to Ni.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.228-229
• /
• 2009

$VO_2$ thermistor was fabricated on $Al_2O_3$ substrate. and has a CTR (Critical Temperature Resistor) characteristic. $VO_2$ thermistor has a about $10^6$ resistance($\Omega$) in normal temperature. But When temperature is a about $80^{\circ}C$, Resistance of $VO_2$ thermistor is a about some hundred resistance: The resistance of $VO_2$ thermistor increased with increasing length and decreasing width.

• Journal of electromagnetic engineering and science
• /
• v.5 no.1
• /
• pp.36-42
• /
• 2005

In this paper, the optimal position of optical phase conjugator(OPC) excellently compensating distorted WDM channels with initial frequency chirp due to both chromatic dispersion and self phase modulation(SPM) is numerically investigated. Highly-nonlinear dispersion shifted fiber(HNL-DSF) is used as a nonlinear medium of OPC in order to widely compensate WDM signal band. It is confirmed that if the OPC position was shifted from mid-way of total transmission length dependence on the initial frequency chirp as well as modulation format and fiber dispersion coefficient, it is possible to cancel the performance degradation owing to the initial frequency chirp. Using proposed configuration, it is possible to remove all in-line dispersion compensator, reducing span losses and system costs in the long-haul broadband WDM systems.

• Journal of the Korean Mathematical Society
• /
• v.37 no.6
• /
• pp.1043-1057
• /
• 2000

This paper is devoted to the investigation of mixed Fourier-Bessel transformation (※Equations, See Full-text) We apply the method of [6] which provides the estimate for weighted L(sub)$\infty$-norm of the spherical mean of │f│$^2$ via its weighted L$_1$-norm (generally it is wrong without the requirement of the non-negativity of f). We prove that in the case of Fourier-Bessel transformatin the mentioned method provides (in dependence on the relation between the dimension of the space of non-special variables n and the length of multiindex ν) similar estimates for weighted spherical means of │f│$^2$, the allowed powers of weights are also defined by multiindex ν. Further those estimates are applied to partial differential equations with singular Bessel operators with respect to y$_1$, …, y(sub)m and we obtain the corresponding estimates for solutions of the mentioned equations.

• Journal of the Korean Vacuum Society
• /
• v.4 no.4
• /
• pp.380-385
• /
• 1995

AI-1%Si 박막배선에서 수명의 길이 의존성 및 EM에 대한 저항성을 절연보호막 및 온도에 대하여 관찰하였고 ICB증착된 Cu박막배선의 EM에 대한 저항성을 측정하여 진공 열증착된 Cu 박막배선과 비교하였다. 첫째, 절연보호막 처리된 AI-1%Si 박막배선에서 길이가 200$\mu$m에서 1200$\mu$m로 증가함에 따라 전류인가에 의한 평균 수명과 활성화에너지값이 감소하다가 임계길이서부터는 모두 포화되는 것으로 나타났다. 절연보호막 물질에 상관 없이 고온으로 갈수록 임계길이가 짧아지며 그것을 넘는 영역에서는 길에에 대한 의존성이 약해져 임계길이 이상을 갖는 박막배선인 경우 평균수명 및 활성화 에너지값은 길이보다 막특성에 의존하는 것으로 사료된다. 둘째, ICB 증착된 Cu 박막배선의 d.c.인가에 따른 평균 수명은 진공 열층착된 Cu 박막배선보다 길게 나왔으며 e.ectromigration에 대한 활성화 에너지값도 1.70eV로 1.33eV보다 높게 측정되어 EM에 대한 저항성이 증가한 것으로 나타났다.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1996.05b
• /
• pp.88-94
• /
• 1996

The dependence of the node size in the condensation heat transfer coefficient for an inclined surface is eliminated and two correlations applicable for laminar and turbulent regimes are implemented in RELAP5/MOD3.1. The newly implemented correlations are used according to their applicable ranges of the film Reynolds numbers Reps which are calculated recursively to track the condensate film thickness along the condensation length. The modified version is compared with the original one through comparison with an analytical solution and the simulation of the Secondary Condensers (SC). It turns out that the simulation results by this modified version are independent of the node size and are better agreement with the analytical solution than those by the original one.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.413-417
• /
• 2004

Recent experiments have shown the 'size effects' in micro/nano scale. But the classical plasticity theories can not predict these size dependent deformation behaviors because their constitutive models have no characteristic material length scale. The Mechanism - based Strain Gradient(MSG) plasticity is proposed to analyze the non-uniform deformation behavior in micro/nano scale. The MSG plasticity is a multi-scale analysis connecting macro-scale deformation of the Statistically Stored Dislocation(SSD) and Geometrically Necessary Dislocation(GND) to the meso-scale deformation using the strain gradient. In this research we present a study of nano-indentation by the MSG plasticity. Using W. D. Nix and H. Gao s model, the analytic solution(including depth dependence of hardness) is obtained for the nano indentation , and furthermore it validated by the experiments.

• Proceedings of the Korea Society of Information Technology Applications Conference
• /
• 2005.11a
• /
• pp.99-102
• /
• 2005

In the paper, a proposed VCO based on bondwire inductances and nMOS varactors was implemented in a standard $0.25\;{\mu}m$ CMOS process. Using the new drain current model and a propagation delay time model equations, the operation speed of CMOS gate will predict the dependence on the load capacitance and the depth of oxide, threshold voltage, the supply voltage, the channel length. This paper describes the result of simulation which calculated a gate propagation delay time by using new drain current model and a propagation delay time model. At the result, When the reverse bias voltage on the substrate changes from 0 voltage to 3 voltage, the propagation delay time is appeared the delay from 0.8 nsec to 1 nsec. When the reverse voltage is biased on the substrate, for reducing the speed delay time, a supply voltage has to reduce. The $g_m$ value of MOSFET is calculated by using new drain current model.