온도 가변에 따른 Large-grain-size TFT의 전기적 특성 변화 분석

Electrical properties of SGS-TFT with 5/5 ${\mu}m$ channel width and length which gate insulator is made of 20nm $SiO_2$ and 80nm $SiN_x$ was fabricated and measured at various temperatures. The field-effect mobility was decreased from 86.25 to 80.42 $cm^2/Vs$ and threshold voltage also decreased from -1.5792 to -1.0492 V, when temperature is increased from room temperature to $100^{\circ}C$. Subthreshold swing, also, increased from 0.3212 to 0.4818 V/dec and $I_{on/off}$ ratio decreased from $5.05{\times}10^7$ to $6.93{\times}10^5$.