• KSCE Journal of Civil and Environmental Engineering Research
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• v.32 no.6C
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• pp.239-247
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• 2012

Some methods were proposed to predict lateral flow due to embankments for road constructions on soft grounds, in which vertical drains were placed. In order to investigate the prediction methods of lateral flow, 200 field monitoring data for embankments in thirteen road construction sites at western and southern coastal areas of the Korean Peninsula were analyzed. For analyzing the relationship between the safety factor of embankment slope and the horizontal displacement in soft grounds where horizontal drain mats were placed, it was reliable to apply the maximum horizontal displacement in soft ground instead of the horizontal displacement at ground surface. The maximum horizontal displacement was developed less than 50mm in fields where the safety factor of slope was more than 1.4, while the one was developed more than 100mm in fields where the safety factor of slope was less than 1.2. In safe fields where the maximum horizontal displacement were developed within 50mm, lateral flow would not happen since shear deformation was not appeared. On the other hand, shear failure would happen in the fields where the maximum horizontal displacement were developed more than 100mm. In such fields, embankments might be continued after some appropriate countermeasures should be prepared. Safe embankments can be performed on soft grounds, in which the stability number is less than 3.0 and the safety factor for bearing is more than 1.7. However, if the stability number is more than 4.3 and the safety factor for bearing is less than 1.2, shear deformation would begin and even shear failure would happen.

• Journal of Industrial Technology
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• v.25 no.B
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• pp.63-71
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• 2005

This paper is an experimental result of investigating lateral soil movements at piled bridge abutments by using the centrifuge model facility. Three different centrifuge model experiments, changing the methods of ground improvement at bridge abutment on the soft clayey soil (no improvement, preconsolidation and plastic board drains (PBD), sand compaction pile (SCP) + PBD), were carried out to figure out which method is the most appropriate for resisting against the lateral soil movements. In the centrifuge modelling, construction process in field was reconstructed as close as possible. Displacements of abutment model, ground movement, vertical earth pressure, cone resistance after soil improvement and distribution of water content were monitored during and after centrifuge model tests. As results of centrifuge model experiments, preconsolidation method with PBD was found to be the most effective against the lateral soil movement by analyzing results about displacements of abutment model, ground movement and cone resistance. Increase of shear strength by preconsolidation method resulted in increasing the resistance against lateral soil movement effectively although SCP could mobilize the resistance against lateral soil movement. It was also found that installment with PBD beneath the backfill of bridge abutment induced effective drainage of excess pore water pressure during the consolidation by embanking at the back of the abutment and resulted in increasing the shear strength of clay soil foundation and eventually increasing the resistance of lateral soil movement against piles of bridge abutment.

• Geotechnical Engineering
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• v.3 no.1
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• pp.7-24
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• 1987

Preloading surcharge method along with vertical drains was adopted to improve the performance of a very soft marine clay deposit. The onshore deposit, located in the Ulsan Bay area, consists of a 2 to 10m thick, very soft, highly compressible marine clay layer developed just below. the sea water level. The initial undrained shear strength of the clay layer was about 0.6 ton/m2. But, the deposit was designed after treatment to support some auxiliary facilities for a new ilo refinery plant, requiring bearing capacities of 3.6 to 5.4 ton/m2 and maximum allowablee settlement of less than 7.5cm. A total of 35, 000 wick drains Ivas installed to expedite drainage during preloading, and surcharge loads of up to 5m above the original ground level were applied in a step-by-step loading sequence to prevent ground failure by excess surcharge loads. An extensive program of field instrumentation was implemented to monitor the behavior of the clay deposit. Measurers!ends included settlements, excess pore pressure and its dissipation, ground farmer level fluctuation, and lateral movement of the so(t clay layer under the preloads. This paper describes the design concepts, construction methods and control procedures used for improvement of the clay layer. It also presents the ground behavior measured during construction, rind comparisons with theoretical predictions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.873-879
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• 2007

We have implemented a highly efficient 2.14-GHz class-F amplifier using Freescale 4-W peak envelope power(PEP) RF Si lateral diffusion metal-oxide-semiconductor field effect transistor(LDMOSFET). Because the control of the all harmonic contents is very difficult, we have managed only the $2^{nd}\;and\;3^{rd}$ harmonics to obtain the high efficiency with simple harmonic control circuit. In order to design the harmonic control circuit accurately, we extracted the bonding wire inductance and drain-source capacitance which are dominant parasitic and package effect components of the device. And then, we have fabricated the class-F amplifier. The measured drain and power-added efficiency are 65.1 % and 60,3 %, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.19-22
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• 2003

In this paper, a new small size Lateral Trench Electrode Power MOSFET with local doping is proposed. This new structure is based on the conventional lateral power MOSFET. The entire electrodes of proposed device are placed in trench oxide. The forward blocking voltage of the proposed device is improved by 3.3 times with that of the conventional lateral power MOSFET. The forward blocking voltage of proposed device is about 500V. At the same size, a increase of the forward blocking voltage of about 3.3 times relative to the conventional lateral power MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide respectively, the electric field in the device are crowded to trench oxide. And because of the structure which has a narrow drain doping width, the punch through breakdown can be occurred in higher voltage than that of conventional lateral power MOSFET. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• Proceedings of the Korean Geotechical Society Conference
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• 2000.02a
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• pp.79-92
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• 2000

In this paper, comparison of the observed and the predicted ground deformations due to the construction of road embankment with peck drain near the construction site was made. Measurement of the ground deformation at the gasoline stand due to the construction of road embankment was made and it was compared with the predicted deformation results of Finite Element Method analysis made with Elasto-plastic and Elastic visco-plastic models. A well agreement was obtained between the measured and predicted ground deformations.

• Structural Engineering and Mechanics
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• v.34 no.3
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• pp.301-317
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• 2010

This paper studies the reliability of an analytical tool for predicting the lateral load-deformation response of RC columns while subjected to lateral cyclic displacements and axial load. The analytical tool in this study is based on a fiber element model implemented into the program DRAIN-2DX (fiber element). The response of RC column under cyclic displacement is defined by the behavior of concrete, and reinforcing steel under general reversed-cyclic loading. A tri-linear stress-strain relationship for the cyclic behavior of steel is proposed and the improvement in the analytical results is studied. This study only considers the behavior of columns with flexural dominant mode of failure. It is concluded that with the implementation of appropriate constitutive material models, the described analytical tools can predict the response of the columns with reasonable accuracy when compared to experimental data.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.673-674
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• 2003

The reliability of TFT, crystallized by sequential lateral solidification (SLS) technology, has been studied High current damage is characterized by high gate bias (-20V) and drain bias (-10V). It is found that performance of SLS TFTs is enhanced by high current stress up to 300 sec of stress time for 20/8 (W/L) N-TFT. After that, TFT performance is degraded with the increase of the stress time. It is speculated from the experimental data that SLS TFTs initially contain a number of unstable defect states. Then, the defect states seem to be cured by high current stress.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.148-152
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• 2004

The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.