Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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An Investigation of Locally Trapped Charge Distribution using the Charge Pumping Method in the Two-bit SONOS Cell

  • An, Ho-Myoung (Department of Semiconductor and New Materials Engineering, Kwangwoon University) ;
  • Lee, Myung-Shik (Department of Semiconductor and New Materials Engineering, Kwangwoon University) ;
  • Seo, Kwang-Yell (Department of Semiconductor and New Materials Engineering, Kwangwoon University) ;
  • Kim, Byung-Cheul (Department of Electronic Engineering, Jinju National University) ;
  • Kim, Joo-Yeon (School of Electricity and Electronics, Ulsan College)
  • Published : 2004.08.01
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Abstract

The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.

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References

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