• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.101-107
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• 1998

This paper is studied micro-defect characteristics by phosphorus 1MeV ion implantation and Rs, SRP, SIMS, XTEM for the RTA process was measured and simulated. As the dose is higher, the Rs is lower. When the dose are $1{\times}10^{13}/cm^2,\;5{\times}10^{13}/cm^2,\;1{\times}10^{14}/cm^2$, the Rp are $1.15{\mu}m,\;1.15{\mu},\;1.10{\mu}m$ respectively. As the RTA time is longer, the maximum concentration position is deeper from the surface and the concentration is lower. Before the RTA was done, we didn't observe any defect. But after the RTA process was done, we could observe the RTA process changed the micro-defects into the secondary defects. The simulation using the buried layer and connecting layer structure was performed. As results, the connecting layer had more effect than the buried layer to latch-up immune. Trigger current was more $0.6mA/{\mu}m$ and trigger voltage was 6V at dose $1{\times}10^{14}/cm^2$ and the energy 500KeV of connecting layer Lower connecting layer dose, latch-up immune characteristics was better.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.39-50
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• 1998

Wide-band sharp-transition filters are widely used in applications such as wireless CODEC design or medical systems. Since these filters suffer from large sensitivity and roundoff noise, large word-length is required for the VLSI implementation, which increases the hardware size and the power consumption of the chip. In this paper, a low-power implementation technique for digital filters with wide-band sharp-transition characteristics is proposed using CPL (Complementary Pass-Transistor Logic), LWDF (Lattice Wave Digital Filter) and a modified DIFIR (Decomposed & Interpolated FIR) algorithm. To reduce the short-circuit current component in CPL circuits due to threshold voltage reduction through the pass transistor, three different approaches can be used: cross-coupled PMOS latch, PMOS body biasing and weak PMOS latch. Of the three, the cross-coupled PMOS latch approach is the most realistic solution when the noise margin as well as the energy-delay product is considered. To optimize CPL transistor size with insight, the empirical formulas for the delay and energy consumption in the basic structure of CPL circuits were derived from the simulation results. In addition, the filter coefficients are encoded using CSD (Canonic Signed Digit) format and optimized by a coefficient quantization program. The hardware cost is minimized further by a modified DIFIR algorithm. Simulation result shows that the proposed method can achieve about 38% reductions in power consumption compared with the conventional method.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.539-548
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• 2018

• ETRI Journal
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• v.26 no.6
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• pp.513-519
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• 2004

This paper presents a low power 16-bit adiabatic reduced instruction set computer (RISC) microprocessor with efficient charge recovery logic (ECRL) registers. The processor consists of registers, a control block, a register file, a program counter, and an arithmetic and logical unit (ALU). Adiabatic circuits based on ECRL are designed using a $0.35{\mu}m$ CMOS technology. An adiabatic latch based on ECRL is proposed for signal interfaces for the first time, and an efficient four-phase supply clock generator is designed to provide power for the adiabatic processor. A static CMOS processor with the same architecture is designed to compare the energy consumption of adiabatic and non-adiabatic microprocessors. Simulation results show that the power consumption of the adiabatic microprocessor is about 1/3 compared to that of the static CMOS microprocessor.

• ETRI Journal
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• v.25 no.3
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• pp.187-194
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• 2003

Delay testing has become an area of focus in the field of digital circuits as the speed and density of circuits have greatly improved. This paper proposes a new scan flip-flop and test algorithm to overcome some of the problems in delay testing. In the proposed test algorithm, the second test pattern is generated by scan justification, and the first test pattern is processed by functional justification. In the conventional functional justification, it is hard to generate the proper second test pattern because it uses a combinational circuit for the pattern. The proposed scan justification has the advantage of easily generating the second test pattern by direct justification from the scan. To implement our scheme, we devised a new scan in which the slave latch is bypassed by an additional latch to allow the slave to hold its state while a new pattern is scanned in. Experimental results on ISCAS'89 benchmark circuits show that the number of testable paths can be increased by about 45 % over the conventional functional justification.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.805-808
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• 2005

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD(Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at same time. maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps, Also, the LIGCSCR(Latch-up Immune Gate Coupled SCR)was designed. It consists of PLVTSCR (P-type Low Voltage Trigger SCR), control NMOS and RC network. The triggering voltage was simulated to 3.6V. And the latch-up characteristics were improved. Finally, we performed the layout high speed I/O interlace circuit with the low triggered ESD protection device in one-chip.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.468-473
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• 2004

The magnetic jack type Control Element Drive Mechanism (CEDM) had been developed and verified through electromechanical testing including the testing of the magnetic force required to lift the control element assembly. It would become inefficient in view of cost and time for parametric studies to be performed by test to improve the CEDM system. So it becomes necessary to develop a computational model to simulate the electromagnetic characteristics of the CEDM in order to improve the CEDM design efficiently. In this paper it is presented that the electromagnetic analysis using a 2D axisymmetric FEM model has been carried out to simulate the operation of the latch magnet of the CEDM to generate a current trace for latch coil. The results show the calculated current trace is very similar to the real current trace taken from the CEDM.

• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1476-1480
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• 1987

This paper proposes a design method for SCLA(sequential CMOS Domino Logic Array) using 1-level CMOS Domino Logic and Stable Shift Register Latch. Also an algorithm to generate a test sequence and a test procedure for the SCLA are presented. The SCLA has advantages of low power consumption, high density and high speed, and performs hazard-and race-free logic operation, because of using SSRL(Stable Shift Register Latch). By using the proposed test method, all of stuck-at, cross-point, stuck-on and stuck-open faults in SCLA are detected by short test sequence.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.129-132
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• 2004

The electrothermal characteristics of a high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) using thin silicon on insulator (SOI) and silicon on sapphire (SOS) such as thermal conductivity and sink is analyzed by MEDICI. The device simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for modeling of the thermal behavior of SOI devices. In this paper we simulated the thermal conductivity and temperature distribution of a SOI LIGBT with an insulator layer of SiO$_2$ and $Al_2$O$_3$ at before and after latch-up and verified that the SOI LIGBT with the $Al_2$O$_3$ insulator had good thermal conductivity and reliability.

• ETRI Journal
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• v.17 no.4
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• pp.1-12
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• 1996

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current ($I_{DS}-V_{DS}$) curves, substrate resistance effect on the $I_{DS}-V_{DS}$ curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.