• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.73-79
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• 2022

In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa₂ phase, and AuGa₂ IMC with small particle sizes was formed on the upper part and Cu₉Ga₄ IMC with a thin band shape on the lower part of the CuGa₂ layer. CuGa₂ particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu₆Sn₅ growth. As a result of analyzing the CuGa₂ growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.16-19
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• 2001

DLC films are deposited using a modified FCVA system. Carbon amorphous networks, chemical bonding states, $sp^3$ fraction, interfaces, and structures are studied as a function of substrate voltage ($0{\sim}-250V$). The $sp^3$ content in the films is evaluated by analyzing the XPS spectra(C1s). The structural properties of the surface, bulk, and interfacial layers in DLC/Si systems are quantitatively analyzed by employing XRR method. As the substrate voltage is increased, the $sp^3$ fraction is decreased by means of XPS and Raman spectroscopy. In addition, the structural properties (interfacial layer, contamination layer, and sp3 fraction) derived from XPS depth profile are relatively correlated with the XRR results.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.89.2-89.2
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• 2011

Stainless steel bipolar plates have many advantage such as high electrical conductivity and mechanical strength and low fabrication cost. However, they need a passivation layer due to low corrosion resistance under PEM fuel cell operation condition. In this study, polyphenyene sulfide(PPS)/carbon composite coated stainless steel bipolar plates were fabricated by compression molding method after PPS/carbon composite sprayed on the stainless steel plate. PPS and carbon were chosen as the binder and conductive filler of passivation layer, respectively. The interfacial contact resistance and corrosion resistance of PPS/carbon composite coated stainless steel bipolar plates were investigated and compared to the stainless steel. The PPS/carbon composite coated stainless steel compared to stainless steel was improved interfacial contact resistance. The results of the potentiodynamic and potentiostatic measurements also showed that the PPS/carbon composite coated stainless steel did not corroded under PEM fuel cell operating conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.973-976
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• 2004

The results of numerous studies in III-V semiconductors show that sulfur treatment improves the electrical parameters of III-V compound devices. In this article, we examine the effects of sulfidation of HgCdTe surface on the interfacial characteristics of metal-ZnS-HgCdTe structures. Different from sulfidation in III-V material, S can not be act as an impurity because II-S compounds (ZnS, CdS) generally used as passivant for HgCdTe. Our studies of sulfur-treatment on HgCdTe surface show that sulfur agent forms the S- S, II-S bonds at the surface layer. These bonds are very effective to improve the electrical properties of ZnS layer on HgCdTe by reducing the possibility of native oxides formation. After the sulfidation process, MIS capacitors of HgCdTe show great improvement in electrical properties, such as low density of fixed charge and reduced hystereisis width.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.5
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• pp.644-654
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• 2003

An analytical solution for a vertically stratified viscous flow in a microchannel with a rectangular cross-section is constructed, assuming fully developed laminar flow where the interfaces between the fluid layers are flat. Although the solution is for n-layer flow, restricted results to symmetrical three-layer flow are presented to investigate the effects of the viscosity and thickness ratios of the fluid layers and the aspect ratio of the microchannel on the flow field. Relations between the flow rate and thickness ratios of the fluid layers with varying viscosity distributions are found, considering the cross -sectional velocity profiles which vary noticeably with the three parameters and differ significantly from the velocity profiles of the flow between infinite parallel plates. Interfacial instability induced by the viscosity stratification in the microchannel is discussed referring to previous studies on the instability analysis for plane multilayer flow. Exact solution derived in the present study can be used for examining a diffusion process and three -dimensional stability analysis. More works are needed to formulate the equations including the effects of interfacial' tension between immiscible liquids and surface wettability which are important in microscale transport phenomena.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.151-155
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• 2003

The requirements for harsh environment electronic controllers in automotive applications have been steadily becoming more and more stringent. Electronic substrate technologists have been responding to this challenge effectively in an effort to meet the performance, reliability and cost requirements. An effect of the plasma cleaning at the alumina substrate and the IMC layer between $Sn-37wt\%Pb$ solder and Ag-Pd thick film conductor after reflow soldering has been studied. Organic residual carbon layer was removed by the substrate plasma cleaning. So the interfacial adhesive strength was enhanced. As a result of AFM measurement, Ag-Pd conductor pad roughness were increased from 304nm to 330nm. $Cu_6Sn_5$ formed during initial ref]ow process at the interface between TiWN/Cu UBM and solder grew by the succeeding reflow process so the grains had a large diameter and dense interval. A cellular-shaped $Ag_3Sn$ was observed at the interface between Ag-Pd conductor pad and solder. The diameters of the $Ag_3Sn$ grains ranged from about $0.1\~0.6{\mu}m$. And a needle-shaped $Ag_3Sn$ was also observed at the inside of the solder.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.234-238
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• 2008

The efficiency of fiber reinforced CMC(ceramic matrix composite) on the SiC materials have been investigated, in conjunction with the fabrication process by liquid phase sintering and the characterization. LPS-$SiC_f$/SiC composites was studied with the detailed analysis such as the microstructure, sintered density, flexural strength and fracture behavior. The applicability of carbon interfacial layer has been also investigated in the LPS process. Submicron SiC powder with the constant total amount and composition ratio of $Al_2O_3,\;Y_2O_3$ as sintering additives was used in order to promote the performance of the SiC matrix material. LPS-$SiC_f$/SiC composites were fabricated with hot press under the sintering temperature and applied pressure of $1820^{\circ}C$ and 20MPa for 1hr. The typical property of monolithic LPS-SiC materials was compared with LPS-$SiC_f$/SiC composites.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.25-27
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• 2005

Sn-9Zn solder balls were bonded to Cu and ENIG (Electroless Nickel/Immersion Gold) pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Sn-9Zn/ENIG, the shear strength remained nearly constant in spite of aging for 1000 hours at $150^{\circ}C$. On the other hand, in the case of the Sn-9Zn/Cu, the shear strength significantly decreased after aging at $150^{\circ}C$ for 100hours and then remained constant by further prolonged aging. Therefore, the protective plating layer such as ENIG must be used to ensure the mechanical reliability of the Sn-9Zn/Cu joint.

• Journal of Electrochemical Science and Technology
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• v.2 no.1
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• pp.8-13
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• 2011

Interfacial compatibility between the Si-Cu electrode and diluted ionic liquid electrolyte containing 50 vol.% of 1M lithium bis(trifluoromethanesulfonyl)imide (LiTFSI)/1-methyl-1-propylpyrrolidinium bis(trifluoromethylsulfonyl)imide (MPP-TFSI) and 50 vol.% dimethyl carbonate (DMC) in a lithium cell and dilution effect on surface chemistry are examined. ex-situ ATR FTIR analysis results reveal that the surface of the Si-Cu electrode cycled in the diluted ionic liquid electrolyte is effectively passivated with the SEI layer mainly composed of carboxylate salts-containing polymeric compounds produced by the decomposition of DMC. Surface species by the decomposition of TFSI anion and MPP cation are found to be relatively in a very low concentration level. Passivation of electrode surface with the SEI species contributes to protect from further interfacial reactions and to preserve the electrode structure over 200 cycles, delivering discharge capacity of > 1670 $mAhg^{-1}$ and capacity retention of 88% of maximum discharge capacity.