Analysis of Interfaces and Structures of DLC Films Deposited by FCVA Method

FCVA 방법으로 증착된 DLC 박막의 계면 및 구조분석

  • Park, Chang-Kyun (Dept. of Electrical Engineering, Hanyang University) ;
  • Chang, Seok-Mo (Dept. of Electrical Engineering, Hanyang University) ;
  • Uhm, Hyun-Seok (Dept. of Electrical Engineering, Hanyang University) ;
  • Seo, Soo-Hyung (Center for Electronic Materials and Components, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electrical Engineering, Hanyang University)
  • 박창균 (한양대학교 전기.전자.제어계측공학과) ;
  • 장석모 (한양대학교 전기.전자.제어계측공학과) ;
  • 엄현석 (한양대학교 전기.전자.제어계측공학과) ;
  • 서수형 (한양대학교 전자재료 및 부품연구센터) ;
  • 박진석 (한양대학교 전기.전자.제어계측공학과)
  • Published : 2001.11.03

Abstract

DLC films are deposited using a modified FCVA system. Carbon amorphous networks, chemical bonding states, $sp^3$ fraction, interfaces, and structures are studied as a function of substrate voltage ($0{\sim}-250V$). The $sp^3$ content in the films is evaluated by analyzing the XPS spectra(C1s). The structural properties of the surface, bulk, and interfacial layers in DLC/Si systems are quantitatively analyzed by employing XRR method. As the substrate voltage is increased, the $sp^3$ fraction is decreased by means of XPS and Raman spectroscopy. In addition, the structural properties (interfacial layer, contamination layer, and sp3 fraction) derived from XPS depth profile are relatively correlated with the XRR results.

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