• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.102-106
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• 2018

Recently, there has been an increasing interest in the use of graphene as electrode materials for supercapacitors. In this regard, graphene oxide (GO) films were prepared using GO slurry obtained by dispersing GO powder in deionized (DI) water. The degree of dispersion of GO powder in DI water depends on the concentration of GO slurry, pH, impurity content, GO particle size, types of functional groups contained in GO, and manufacturing method of GO powder. In this study, the dispersivity of the GO powder was improved by adjusting the pH using only DI water (without additives), and a uniform GO film was obtained. The GO film was reduced by exposure to xenon intense pulsed light for a few milliseconds, and the reduced GO film was used as electrodes of a supercapacitor. The supercapacitor was characterized using cyclic voltammetry (CV), charge-discharge cycle, and electrochemical impedance spectroscopy measurements, and the specific capacitance of the supercapacitor was found to be ~140 F/g from the CV data.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.2
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• pp.101-105
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• 2010

Silicon electrode and ring in a plasma etcher those are in contact with harsh plasma suffer from periodic heating and cooling during their lifetime. This causes the silicon components failure due to thermal stress remaining the persistent slip bands (PSBs) on their surfaces. The factors that determine the lifetime of silicon electrode and ring were discussed with respect to silicon ingot. The impurity level and the average defect concentration measured with glow discharge mass spectrometer (GDMS) and microwave photo-conductance decay (${\mu}$-PCD) were compared with the grade of silicon ingots those are divided to slip-free and slip-allowed ingot. Some silp-allowed samples showed planar defects along <110> direction on {001} surface. The role of these defects was suggested from the viewpoint of the lifetime of silicon components.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.341-347
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• 1998

We analyzed photoreflectance (PR) characterization of the $Al_xGa_{1-x}As$ epilayer grown by molecular beam epitaxy (MBE) method. The band-gap energy $(E_0)$ satisfying low power Franx-Keldysh (LPFK) due to GaAs buffer layer is 1.415 eV, interface electricall field $(E_i)$ is 1.05$\times$$10^4$V/cm, carrier concentration (N) is $1.3{\times}10^{15}\textrm{cm}^{-3}$. In PR spectrum intensity analysis at 300 K the $A^*$ peak below $(E_0)$ signal is low and distorted because of residual impurity in sample growth. The trap characteristic time ${\tau}_i$ of GaAs buffer layer is about 0.086 ms, and two superposed PR signal near 1.42eV consist of the third derivative signal of chemically eteched GaAs substrate and Franz-Keldysh oscillation (FKO) signal due to GaAs buffer layer.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.62-70
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• 1984

N+NPP+ HLEBSF (high low emitter back surface field) solar cells which have N+N high low junction in the emitter as well as N+PP+ BSF cells were designed and fabricated by using <111> oriented P type Si wafers with the resistivity of 10$\Omega$/$\textrm{cm}^2$ and the thickness of 13-15 mil. Physical parameters (impurity concentration, thickness) at each region of N+PP+ and N+NPP+ cell were made equally through same masks and simultaneous process except N region of HLEBSF cell to investigate the high low emitter junction effect for efficiency improvement. Under the light intensity of 100 mW/$\textrm{cm}^2$, total area (active area) conversion efficiency were typically 10.94% (12.16%) for N+PP+ BSF cells and 12.07% (13.41%) for N+N PP+ cells. Efficiency improvement of N+NPP+ cell which has high low emitter Junction structure is resulted from the suppression of emitter recombination current and the increasement of open circuit voltage (Voc) and short circuit current (Ish) by removing heavy doping effects occurring in N+ emitter region.

• 보존과학연구
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• s.10
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• pp.1-40
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• 1989

Between 1976 and 1984 approximately 26.7 tons of Chinese coins were recovered from a shipwreck which was found at the seabed of the Shin an area in the south-western coast of the Korean peninsula. Elements, Cu, Pb, Sn, Fe, Sb, As, Zn, Ag, Ni, Co and Mn, of 54 pieces of the coins were determined by Inductively Coupled Plasma Atomic Emission Spectroscopy(ICP-AIS). The result shows that Ch, Pb, and Sn were found to be major elements roughly the coins with the ratio of 7 : 2 : 1, respectively. Trace elements were classified into 3 levels according to the avarage concentration : Fe,As and Sb(0.1-0.5%), Ag, Mi, Co and Zn(100-1000ppm) and Mn(10ppm). Some systematic tendencies are observed in the composition change with a function of their minting ages .The Wuzhu coins(오수전) from the Eastern Han dynasty(A.D.25-219 )are much more abundant in Cu than the coins of Tang dynasty(A.D.618-907) and later periods. Major element compositions of the Kai -tong Vuan-Bao(개통원보) coins from the Tang dynasty, were remarkably variable. In general, however, the Tang dynasty coins were much more abundant in Cu than the Song dynasty(A.S.S60-1279) coins. The amount of major elements Cu and Sn decreases while that of Pb in creasesby passage of age from the Bei Song dynasty(A.D.960-1127) to later Nam Song dynasty (A.D.1127-1279 ). It means that the quality of coins mere degraded. The amounts of trace elemends(Fe, As, Co, Hn) increases with the above age. High amounts of trace elements are supposed to be a reflection of immaturity of minting techniques or use of impurity-rich raw materials. The Jin dynasty(A.D.1125-1234) coins are found to be rich in Sn and thus contain Pb as the third component. It is quite different from the coins of the Song dynasty. The Zhi-dai Tong-Bao(지대통보) coins of the Yuan dynasty from A.0.1310 are much more abundant in Cu and Sn than those of the Nam Song dynasty .

• Korean Chemical Engineering Research
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• v.51 no.6
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• pp.661-665
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• 2013

Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, $80^{\circ}C$, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination.

• Journal of the Korea Institute of Building Construction
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• v.8 no.4
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• pp.105-114
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• 2008

This study investigates the saturation level of surface dryness, quantity of adhesive mortar, and the alien substance content of recycled aggregates for concrete to develop an adequate quality testing method for understanding the properties of recycled aggregates, which differ greatly from preexisting aggregates. For tests that measure the saturation level of surface dryness, where detail methods are applied differently according to the tester, various testing methods from across world were compared and analyzed. This study revealed that when measuring the saturation level of surface dryness of a certain sample, aggregates must be supplemented immediately whenever the height of the sample becomes lower than the measuring mold, and allowing the tamper to free fall on the sample will provide the most accurate results. When measuring the quantity of adhesive mortar of recycled aggregates for concrete, an acid solution was used, and since the quantity of adhesive mortar increases as the particle sizes gets smaller, the sample for testing should represent the entire granularity. Sulfuric acid solution is adequate for immersion, and the concentration should be 20% for best results. According to the alien substance content measurement, which was examined by the naked eye, the error range caused by the difference in particle size was neglectable, and therefore the sample should be $2.5{\sim}5.0mm$ in size concerning the accuracy and measuring time. Also, for coarse recycled aggregates, the sample should amount to 1kg for measuring alien substance content by the naked eye, which proves that assortment by the naked eye is the most adequate method for measuring the alien substance content of a recycled aggregate.

• Journal of Powder Materials
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• v.18 no.3
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• pp.283-289
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• 2011

Magnesium hydroxide sulfate hydrate whiskers ($5Mg(OH)_2{\cdot}MgSO_4{\cdot}3H_2O$, abbreviated 513 MHSH) were prepared using hydrothermal reaction with magnesium oxide (MgO) and magnesium sulfate ($MgSO_4{\cdot}7H_2O$) as the starting materials. The effects of the molar ratio of $MgSO_4$/MgO and amount of $NH_4OH$ were studied. As a result, 513 MHSH whiskers co-existed with hexagonal plate $Mg(OH)_2$ at low concentration of $SO_4^{2-}$. The molar ratio of $MgSO_4{\cdot}7H_2O$/MgO was 7:1, uniform 513 MHSH whiskers were formed without impurity such as $Mg(OH)_2$. Appropriate amount of $NH_4OH$ has affected to formation of high quality MHSH. Their morphologies and structures were determined by powder X-ray diffraction (XRD) scanning electron microscopy (SEM) and thermo-gravimetric analyzer (TGA).

• Proceedings of the Korean Vacuum Society Conference
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• 1992.02a
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• pp.17-18
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• 1992

SIMS is an indispensable surface analysis instrument in trace element depth p profiling because of high detection sensitivity and excellent depth r resolution, however, it requires standard sample to do quantitative analysis d due to matrix effect depending on the species of impurities and sample m matricies and on the sputtering rates. A Among the SNMS technology developed to supply the deficiency, we researched i into CsX+ SNMS which improved the resul t quanti tati vely wi thout any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate a analysis using Si02 layer etc. and adaptability to trace element c concentration analysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented s strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. d dynamic range were investigated. A After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.