• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.3
• /
• pp.363-369
• /
• 2017

Phase-change random access memory (PRAM) has been emerged as a potential memory due to its excellent scalability, non-volatility, and random accessibility. But, as the cell current is reducing due to cell size scaling, the read-sensing window margin is also decreasing due to increased variation of cell performance distribution, resulting in a substantial loss of yield. To cope with this problem, a novel adaptive read-sensing reference current generation scheme is proposed, whose trimming range and resolution are adaptively controlled depending on process conditions. Performance evaluation in a 58-nm CMOS process indicated that the proposed read-sensing reference current scheme allowed the integral nonlinearity (INL) to be improved from 10.3 LSB to 2.14 LSB (79% reduction), and the differential nonlinearity (DNL) from 2.29 LSB to 0.94 LSB (59% reduction).

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.715-718
• /
• 1998

본 논문에서는 시분할 구조와 1.5bit 디지털 에러보상을 사용하여 작은 면적을 갖는 저 전압, 저전력 10bit 1㎒ 사이클릭 A/D 변환기를 제안하였다. 제안된 사이클릭 A/D 변환기는 시분할 구조를 사용함으로서 변환속도의 향상과 저 전력 특성을 가질 수 있었으며 1.5bit 디지털 에러 보상을 사용함으로서 10bit의 고해상도와 저 전력 특성을 구현할 수 있었다. 제안된 사이클릭 A/D 변환기는 0.6㎛ CMOS Nwell 공정 parameter로 simulation 하였으며 layout 결과 칩면적은 1.1㎜×0.8㎜ 이며 이는 비슷한 성능을 갖는 다른 A/D 변환기에 비하여 매우 작은 크기이다. 제안된 사이클릭 A/D 변환기는 3V의 전원전압에 1.6㎽의 전력소모를 갖는다. Matlab simulation 결과 INL, DNL은 각각 0.6LSB, 0.7LSB 이하의 값을 보였다.

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.691-694
• /
• 1998

This paper describes a 6-b 400 MSPS CMOS folding and interpolating(F&I) ADC. To overcome the delay difference of an MSB part and an LSB part in a typical F&I ADC the ADC is composed of only one LSB part and to alleviate the offset voltage of comparators in the LSB part preamplifiers are used in front of the comparators. This paper analyzes a folder and presents a design procedure of the folder. The ADC has the DNL of 0.3 LSB and the INL of 0.6 LSB and consumes the power of 120mW $$ 3 V. The ADC is designed in a 0.6 $\mu\textrm{m}$ CMOS process.

• The Journal of the Acoustical Society of Korea
• /
• v.17 no.7
• /
• pp.74-78
• /
• 1998

본 논문에서는 고속의 변환속도를 갖는 파이프라인드 방식과 저전력 특성을 갖는 축차 비교 방식 구조를 혼용하여 고속, 저전력 아날로그-디지털 변환기를 설계하였다. 제안 된 구조는 축차 비교 방식의 변환에서 비교기를 파이프라인드 구조로 연결하여 홀드된 주기 에 비교기의 기준 전위를 전 비교기의 출력값에 의해 변환하도록 하여 고속 동작이 가능하 도록 하였다. 제안된 구조에 의해 8비트 아날로그 디지털 변환기를 0.8㎛ CMOS공정으로 HSPICE를 이용하여 시뮬레이션한 결과, INL/DNL은 각각 ±0.5/±1이었으며, 100kHz 사인 입력 신호를 10MS/s로 샘플링 하여 DFT측정 결과 SNR은 41dB를 얻을 수 있었다. 10MS/s의 변환 속도에서 전력 소모는 4.14mW로 측정되었다.

• Proceedings of the IEEK Conference
• /
• 1998.06a
• /
• pp.518-521
• /
• 1998

This paper describes a 3.3V-65MHz 12BIT CMOS current-mode DAC designed with a 8 MSB current matirx stage and a 4 LSB binary weighting stage. The linearity errors caused by a voltage drop of the ground line and a threshold voltage mismatch of transistors have been reduced by the symmetrical routing method with ground line and the tree structure bias circuit, respectively. In order to realize a low glitch energy, a cascode current switch ahs been employed. The simulation results of the designed DAC show a coversion rate of 65MHz, a powr dissipation of 71.7mW, a DNL of .+-.0.2LSB and an INL of .+-.0.8LSB with a single powr supply of 3.3V for a CMOS 0.6.mu.m n-well technology.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.3
• /
• pp.44-44
• /
• 2001

본 논문에서는 CMOS로 구현된 3.3V 8-bit 200MSPS의 Folding / Interpolation 구조의 A/D 변환기를 제안한다. 회로에 사용된 구조는 FR(Folding Rate)이 8, NFB(Number of Folding Block)가 4, Interpolation rate 이 8이며, 분산 Track and Hold 구조를 회로를 사용하여 Sampling시 입력주파수를 Hold하여 높은 SNDR을 얻을 수 있었다. 고속동작과 저 전력 기능을 위하여 향상된 래치와 디지털 Encoder를 제안하였고 지연시간 보정을 위한 회로도 제안하였다. 제안된 ADC는 0.35㎛, 2-Poly, 3-Metal, n-well CMOS 공정을 사용하여 제작되었으며, 유효 칩 면적은 1070㎛×650㎛ 이고, 3.3V전압에서 230mW의 전력소모를 나타내었다. 입력 주파수 10MHz, 샘플링 주파수 200MHz에서의 INL과 DNL은 ±1LSB 이내로 측정되었으며, SNDR은 43㏈로 측정되었다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.7 no.1
• /
• pp.43-50
• /
• 2007

In a high-speed flash style or a pipelining style analog-to-digital converter (A/D converter), the DC reference fluctuation caused by external noises becomes serious, as the sampling frequency is increased. To reduce the fluctuations in conventional A/D converters, capacitors have been simply used, but the layout area was large. Instead of capacitors, a low-noise and small-size DC reference circuit based on transmission gate (TG) is proposed in this paper. In order to verify the proposed technique, we designed and manufactured a 6-bit 2GSPS CMOS A/D converter. The A/D converter is designed with a 0.18um 1-poly 6-metal n-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies the chip area of 977um by 1040um. The measured result shows that SNDR is 36.25 dB and INL/DNL is within 0.5LSB, even though the DC reference fluctuation is serious.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.696-699
• /
• 2008

A 10-bit source driver using low temperature poly-silicon(LTPS) TFTs is developed. To reduce the DAC area, the DAC structure including two 5-bit resistor-string DACs and analog buffer, which has analog adder is proposed. The source driver is fabricated using LTPS process and its one channel area is $3,200{\mu}m\;{\times}\;260{\mu}m$. The simulated INL and DNL of output voltages are less than 3 LSB and 1 LSB, respectively.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.253-256
• /
• 2001

This paper introduces the design of high-speed analog- to-digital converter for high-definition TV, camcorders, portable equipments and implemented in a 0.65${\mu}{\textrm}{m}$ CMOS technology. Key circuits developed for low power and high speed A/D converter are a dynamic comparator that consumes no static power, a source follower buffered op amp that achives wide bandwidth using large input devices. The converter achieves low power dissipation of 40-mW at 3.3-V power supply. Measured performance includes 0.53 LSB of INL and 0.48 LSB of DNL while sampling at 60MHz.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.255-258
• /
• 1999

This paper describes a 40-Msample/s 10-bit CMOS folding and interpolating analog-to-digital converter (ADC). A new 2-step architecture is proposed. The proposed architecture is composed of a coarse ADC bloch for the 6bits of MSBs and a fine ADC block for the remaining 4bits. The amplified folding analog signals in the coarse ADC are selectively chosen for the fine ADC. In the fine ADC, the bubble errors of the comparators are corrected by using the BGM(binary-gray-mixed) code[1] and extra two comparators are used to correct underflow and overflow errors. The proposed ADC was simulated using CMOS 0.25${\mu}{\textrm}{m}$ parameters and occupies 1.0mm$\times$1.0mm. The power consumption is 48㎽ at 40MS/s with 2.5-V power supply. The INL is under $\pm$2.0LSB and the DNL. is under $\pm$1.0LSB by Matlab simulations.