• 마이크로전자및패키징학회지
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• 제17권1호
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• pp.81-88
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• 2010

Sn-3.0Ag-0.5Cu 솔더범프의 금속간화합물 성장거동에 미치는 PCB 표면처리의 영향을 알아보기 위해서 PCB 패드 표면에 각각 OSP, immersion Sn, 그리고 ENIG를 처리하였고, 열처리는 $150^{\circ}C$ 조건에서 실험을 실시하였다. 또한, 전류인가시 Sn-3.0Ag-0.5Cu 솔더범프의 접합부 계면반응에 미치는 표면처리의 영향을 알아보기 위해서 $150^{\circ}C$, $4{\times}10^3\;A/cm^2$ 조건에서 electromigration특성을 비교 평가하였다. 열처리시 OSP와 immersion Sn의 금속간화합물 성장거동은 서로 비슷한 경향을 보인 반면, ENIG는 다른 표면처리에 비해 훨씬 느린 성장거동을 보였다. electromigration특성 평가결과 열처리에 비해 금속간화합물의 성장이 가속화되나 표면처리별 경향은 유사하였고, 전자 이동 방향에 따른 음극-양극에서 금속간화합물 형성의 차이를 보이는 극성효과(polarity effect)가 나타나는 것을 알 수 있었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.195-202
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• 2003

In this study, failure mechanisms of Au stud bumps/ACF flip chip joints were investigated underhigh current stressing condition. For the determination of allowable currents, I-V tests were performed on flip chip joints, and applied currents were measured as high as almost 4.2Amps $(4.42\times10^4\;Amp/cm^2)$. Degradation of flip chip joints was observed by in-situ monitoring of Au stud bumps-Al pads contact resistance. All failures, defined at infinite resistance, occurred at upward electron flow (from PCB pads to chip pads) applied bumps (UEB). However, failure did not occur at downward electron flow applied bumps (DEB). Only several $m\Omega$ contact resistance increased because of Au-Al intermetallic compound (IMC) growth. This polarity effect of Au stud bumps was different from that of solder bumps, and the mechanism was investigated by the calculation of chemical and electrical atomic flux. According to SEM and EDS results, major IMC phase was $Au_5Al_2$, and crack propagated along the interface between Au stud bump and IMC resulting in electrical failures at UEB. Therefore. failure mechanisms at Au stud bump/ACF flip chip Joint undo high current density condition are: 1) crack propagation, accompanied with Au-Al IMC growth. reduces contact area resulting in contact resistance increase; and 2) the polarity effect, depending on the direction of electrons. induces and accelerates the interfacial failure at UEBs.

• 마이크로전자및패키징학회지
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• 제18권4호
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• pp.85-90
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• 2011

솔더 접합부의 품질 신뢰성 문제는 얼라인먼트(Alignment)문제로 발생한 오픈불량, 기판 휨에 의한 HIP(Head In Pillow)불량, 열팽차 차이에 의한 솔더자체 크랙과 기계적인 충격에 의한 IMC층의 크랙이 중요한 불량이다. 특히 기판 소형화와 표면처리의 변화가 진행 되면서, 솔더 범프와 기판 사이 IMC층의 취성파괴가 더욱 이슈화가 되면서 연구가 활발하다. IMC의 형성과 성장 및 취성파괴의 메카니즘 연구를 통하여 기존 평가방법의 변별력 향상, 계량화 등의 개선이 필요하고, IMC 취성의 수준 향상 등 크랙에 대한 신뢰성 향상 방향을 위한 연구 방향을 제시하고자 한다.

• 마이크로전자및패키징학회지
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• 제20권2호
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• pp.59-64
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• 2013

3차원 적층 패키지를 위한 Cu/Ni/Au/Sn-Ag/Cu 미세 범프의 열처리에 따른 금속간 화합물 성장 거동을 분석하기 위하여 in-situ SEM에서 $135^{\circ}C$, $150^{\circ}C$, $170^{\circ}C$의 온도에서 실시간 열처리 실험을 진행하였다. 실험 결과 금속간 화합물의 성장 거동은 열처리시간이 경과함에 따라 시간의 제곱근에 직선 형태로 증가하였고, 확산에 의한 성장이 지배적인 것을 확인 할 수 있었다. Ni/Au 층의 존재로 인해 Au의 확산으로 복잡한 구조의 금속간 화합물이 생성 된 것을 확인할 수 있다. 활성화 에너지는 $Cu_3Sn$의 경우 0.69eV, $(Cu,Ni,Au)_6Sn_5$경우 0.84 eV로 Ni이 포함된 금속간 화합물이 더 높은 것을 확인 하였으며, 확산 방지층 역할을 하는 Ni층에 의해 금속간 화합물 성장이 억제됨에 따라 신뢰성이 향상 될 것으로 사료된다.

• Journal of Welding and Joining
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• 제18권3호
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• pp.89-96
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• 2000

As solder becomes small and fine, the reliability and solderability of solder joint are the critical issue in present electronic packaging industry. Besides the use of lead(Pb) containing solders for the interconnections of microelectronic subsystem assembly and packaging has enviromental problem. In this study, using Sn/Pb and Sn/Ag eutectic solder paste, in order to obtain decrease of solder joint strength with increasing aging time, initial solder joint strength and aging strength after 1000 hour aging at $100^{\circ}C$ were measured by peel test. And in order to obtain the growth of intermetallic compound(IMC) layer thickness, IMC layer thickness was measured by scanning electron microscope(SEM). As a result, solder joint strength was decreased with increasing aging time. The mean IMC layer thickness was increased linearly with the square root of aging time. The diffusion coefficient(D) of IMC layer was found to $1.29{\times}10^{-13}{\;}cm^2/s$ at using Sn/Pb solder paste, 7.56{\times}10^{-14}{\textrm}{cm}^2/s$ at using Sn/Ag solder paste.

• Journal of Welding and Joining
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• 제25권2호
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• pp.82-88
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• 2007

Sn-3.0Ag-0.5Cu lead fee solder was generally utilized in electronics assemblies. But it is insufficient to research about activation energy(Q) that is applying to evaluate the solder joint reliability of environmental friendly electronics assemblies. Therefore this study investigated Q values which are needed to IMC formation and growth of Sn-3.0Ag-0.5Cu/Cu and Sn-40pb/Cu solder joints during aging treatment. We bonded Sn-3.0Ag-0.5Cu and Sn-40Pb solders on FR-4 PCB with Cu pad$(t=80{\mu}m)$. After reflow soldering, to observe the IMC formation and growth of the solder joints, test specimens were aged at 70, 150 and $170^{\circ}C$ for 1, 2, 5, 20, 60, 240, 960, 15840, 28800 and 43200 min, respectively. SEM and EDS were utilized to analysis the IMCS. From these results, we measured the total IMC$(Cu_6Sn_5+Cu_3Sn)$ thickness of Sn-3.0Ag-0.5Cu/Cu and Sn-40Pb/Cu interface, and then obtained Q values for the IMC$(Cu_6Sn_5,\;Cu_3Sn)$ growth of the solder joints.

• 마이크로전자및패키징학회지
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• 제30권3호
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• pp.64-72
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• 2023

본 연구에서는 Cu 기판 위에 그래핀(graphene)을 전사하고 Cu 기판 위에 Sn-3.0Ag-0.5Cu 무연(Pb-free) 솔더페이스트를 도포한 후에, 리플로우 솔더링 공정 및 다양한 온도(125, 150, 175 ℃)에서 등온 시효 1000 h 동안 Cu 기판과 솔더 계면에서 발생하는 금속간화합물(intermetallic compound, IMC)의 형성과 성장 거동에 전사된 graphene의 미치는 영향에 대하여 보고하였다. Graphene이 계면에 존재하는 경우 graphene이 존재하지 않은 경우와 비교할 때, 솔더링 공정 및 시효 동안 형성되어 성장하는 Cu₆Sn₅과 Cu₃Sn IMC의 두께가 감소하는 것을 확인 할 수 있었다. 또한, 계면에 존재하는 전사된 graphene 층(layer)은 시효 온도와 시간에 따라 IMC들의 성장 거동과 관계된 Cu₆Sn₅과 Cu₃Sn IMC의 성장 속도 상수와 성장 속도 상수 제곱 값들도 크게 감소시킬 수 있는 것으로 나타났다.

• 한국재료학회지
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• 제18권1호
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• pp.45-50
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• 2008

Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.267-271
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• 2004

The joint strength and fracture surface of Sn-Pb solder bump in photo diode packages after isothermal aging testing were studied experimentally. Cu/Sn-Pb solders were adopted, and aged for up to 900 hours at 12$0^{\circ}C$ and 17$0^{\circ}C$ to analyze the effect of intermetallic compound(IMC). In 900-hour aging experiments, the maximum shea strength of Sn-Pb solder decreased by 20％ and 9％. The diffraction patterns of Cu$_{6}$Sn$_{5}$, scallop-shape IMC, and planar-shape Cu$_3$Sn were observed by Transmission Electron Microscopy (TEM).EM).

• 대한금속재료학회지
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• 제46권1호
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• pp.33-38
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• 2008

The interfacial reactions and shear strength of pure Sn solder bump were investigated with different under bump metallizations (UBMs) and reflow numbers. Two different UBMs were employed in this study: Cu and Ni. Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) were formed at the bump/Cu UBM interface, whereas only a Ni3Sn4 IMC was formed at the bump/Ni UBM interface. These IMCs grew with increasing reflow number. The growth of the Cu-Sn IMCs was faster than that of the Ni-Sn IMC. These interfacial reactions greatly affected the shear properties of the bumps.