• Title/Summary/Keyword: IIP2

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Mixer using the direct-conversion method (직접 변환 방식을 이용한 주파수 혼합기)

  • Lim Chae-sung;Kim Sung-woo;Choi Hyek-Hwan;Lee Myoung-kyo;Kwon Tae-ha
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.6
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    • pp.1269-1276
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    • 2005
  • In this paper, Mixer using the direct-conversion method intended to use in front-end of a RF receiver is designed. The direct conversion Mixer is an alternative wireless receiver architecture to the well-established superheterodyne, particularly for high integration, low power, and low cost. It operates at 2.4GHz band, and is designed and simulated with a 0.35um CMOS technology and HSPICE simulator. Layout is implemented with a Mentor IC Station. The 2.4GHz CMOS Mixer employs a modified single-balanced Gilbert Cell with additional MOSFET in the output stages to improve IIP2, which is a standard of linearity in direct conversion receiver. Additional coversion-stages's transconductances are controlled by each MOSFET's physical properties. The HSPICE simulation results show that the 2.4GHz CMOS Mixer has voltage gam of 29dB, IIP2 of 63dBm, respectively. The Mixer also draws 3.5mA from a 3.3V supply.

CBCT assessment of alveolar bone wall morphology and its correlation with tooth angulation in the anterior mandible: a new classification for immediate implant placement

  • Nur Hafizah Kamar Affendi;Jumanah Babiker;Mohd Yusmiaidil Putera Mohd Yusof
    • Journal of Periodontal and Implant Science
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    • v.53 no.6
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    • pp.453-466
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    • 2023
  • Purpose: This study aimed to quantify alveolar bone morphology, demonstrate the relationship between tooth angulation and alveolar bone thickness, and introduce a new classification for anterior mandibular teeth related to immediate implant placement (IIP). Methods: Cone-beam computed tomography (CBCT) images of 211 anterior mandibular teeth were analyzed in sagittal slices to measure the thickness of the facial alveolar bone crest (FAB1) and apex (FAB2), and the lingual alveolar bone crest (LAB1) and apex (LAB2). Tooth angulation was classified as 1°-10°, 11°-20°, and >20° according to the tooth's long axis and alveolar bone wall. Spearman correlation coefficients were used to evaluate correlations between the variables. Results: FAB1 and LAB1 were predominantly thin (<1 mm) (84.4% and 73.4%, respectively), with the lateral incisors being thinnest. At the apical level, FAB2 and LAB2 were thick in 99.5% and 99.1% of cases, respectively. Significant differences were documented in FAB2 (P=0.004), LAB1 (P=0.001), and LAB2 (P=0.001) of all mandibular teeth. At all apical levels of the inspected teeth, a significant negative correlation existed between TA and FAB2. Meanwhile, TA showed a significant positive correlation with LAB2 of the lateral incisors and canines. These patterns were then divided into class I (thick facial and lingual alveolar bone), class II (facially inclined teeth) with subtype A (1°-10°) and subtype B (11°-20°), and class III (lingually inclined teeth) with subtype A (1°-10°) and subtype B (11°-20°). Conclusions: Mandibular anterior teeth have predominantly thin facial and lingual crests, making the lingual bone apical thickness crucial for IIP. Although anchorage can be obtained from lingual bone, tooth angulation and tooth types had an impact on IIP planning. Hence, the new classification based on TA and alveolar bone wall may enable rational clinical planning for IIP treatment.

1.8V Gilbert Cell CMOS Downconversion Mixer Using Bulk for 2.4GHz ISM band

  • Chae, Yong-Doo;Hwang, Young-Seung;Oh, Bum-Suk;Woong Jung
    • Proceedings of the IEEK Conference
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    • 2003.11c
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    • pp.391-395
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    • 2003
  • In this work, we have designed Gilbert cell downconversion mixer using 0.25um Anam CMOS process, we also have analyzed Conversion gain and IIP3 using Taylor series in our own unique way. Especially, bulk terminal is used as LO( Local Oscillator) input for reduction of power consumption and supply voltage. Supply voltage used in this design is lower than 1.8V and core current is less than 500uA. The simulation experiments showed that the conversion gain, IIP3, and power consumption were -1 dB, 4.46dBm, and 0.8mW, respectively.

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An RF Front-end for Terrestrial and Cable Digital TV Tuners (지상파 및 케이블 디지털 TV 튜너를 위한 RF 프런트 엔드)

  • Choi, Chihoon;Im, Donggu;Nam, Ilku
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.12
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    • pp.242-246
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    • 2012
  • This paper presents an integrated low noise and highly linear wideband RF front-end for a digital terrestrial and cable TV tuner, which are used as a part of double-conversion TV tuner. The low noise amplifier (LNA) has a low noise figure and high linearity by adopting a noise canceling technique based on current amplification. The up-conversion mixer and SAW buffer have high linearity by employing a third order intermodulation cancellation technique. The proposed RF front-end is designed in a $0.18{\mu}m$ CMOS and draws 60 mA from a 1.8 V supply voltage. The RF front-end shows a voltage gain of 30 dB, an average single side-band noise figure of 4.2 dB, an IIP2 of 40 dBm, and an IIP3 of -4.5 dBm for the entire band from 48 MHz to 862Hz.

Design of the Resistive Mixer MMIC with high linearity and LO-RF isolation (고선형성과 높은 LO-RF 격리도를 갖는 새로운 구조의 저항성 Mixer MMIC 설계)

  • Lee, Kyoung-Hak
    • Journal of Satellite, Information and Communications
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    • v.9 no.2
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    • pp.7-11
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    • 2014
  • In this paper, we designed resistive MMIC mixer using $0.5{\mu}m$ p-HEMT process. This Mixer is designed to have a similar performance in -4 ~ 4 dBm local oscillator signal power level and to maintain a constant conversion loss and linear performance due to the variation of local signal. In order to have such characteristics, we designed new feedback circuit topology by using FET, and minimized performance change for LO signal power level variation, also obtain MMIC mixer characteristics which is able to apply in wideband. In the design result, When the LO signal power is -4 ~ 4 dBm, there was 6 dB conversion loss and it came up with the excellent result that IIP3 got over 30 dBm in 0.5 ~ 2.6GHz frequency band.

Improving the Linearity of CMOS Low Noise Amplifier Using Multiple Gated Transistors (Multiple Gated Transistors의 Derivative Superposition Method를 이용한 CMOS Low Noise Amplifier의 선형성 개선)

  • Yang, Jin-Ho;Kim, Hui-Jung;Park, Chang-Joon;Choi, Jin-Sung;Yoon, Je-Hyung;Kim, Bum-Man
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.505-506
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    • 2006
  • In this paper, the linearization technique for CMOS low-noise amplifier (LNA) using the derivative superposition method through the multiple gated transistors configuration is presented. LNA based on 0.13um RF CMOS process has been implemented with a modified cascode configuration using multiple gated common source transistors to fulfill a high linearity. Compared with a conventional cascode type LNA, the third order input intercept point (IIP3) per DC power consumption (IIP3/DC) is improved by 3.85 dB. The LNA achieved 2.5-dBm IIP3 with 13.4-dB gain, 3.6 dB NF at 2.4 GHz consuming 8.56 mA from a 1.5-V supply.

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Post-Linearization Technique of CMOS Cascode Low Noise Amplifier Using Dual Common Gate FETs (두 개의 공통 게이트 FET를 이용한 캐스코드형 CMOS 저잡음 증폭기의 후치 선형화 기법)

  • Huang, Guo-Chi;Kim, Tae-Sung;Kim, Seong-Kyun;Kim, Byung-Sung
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.7 s.361
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    • pp.41-46
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    • 2007
  • A novel post-linearization technique is proposed for CMOS cascode low noise amplifier (LNA). The technique uses dual common gate FETs one of which delivers the linear currents to a load and the other one sinks the $3^{rd}$ order intermodulation currents of output currents from the common source FET. Selective current branching can be implemented in $0.18{\mu}m$ CMOS process by using a thick oxide FET as an IM3 sinker with a normal FET as a linear current buffer. A differential LNA adopting this technique is designed at 2.14GHz. The measurement results show 11dBm IIP3, 15.5dB power gain and 2.85dB noise figure consuming 12.4mA from 1.8V power supply. Compared with the LNA with turning off the IM3 sinker, the proposed technique improves the IIP3 by 7.5 dB.

Broadband CMOS Single-ended to Differential Converter for DVB-S2 Receiver Tuner IC (DVB-S2 수신기 튜너용 IC의 광대역 CMOS 단일신호-차동신호 변환기)

  • Shin, Hwa-Hyeong;Kim, Nam-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.185-185
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    • 2008
  • This paper describes the broadband SDC (Single-ended to Differential Converter) for Digital Video Broadcasting-Satellite $2^{nd}$ edition (DVB-S2) receiver tuner IC. It is fabricated by using $0.18{\mu}m$ CMOS process. In order to obtain high linearity and low phase mismatch, the broadband SDC (Single-ended to Differential Converter) is designed with current mirror structure and cross-coupled capacitor and current source binding differential structure at VDD. The simulation result of SDC shows IIP3 of 11.9 dBm and IIP2 of 38 dBm. It consumes 5mA current with 2.7V supply voltage.

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Single-Balanced Low IF Resistive FET Mixer for the DBF Receiver

  • Ko Jee-Won;Min Kyeong-Sik
    • Journal of electromagnetic engineering and science
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    • v.4 no.4
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    • pp.143-149
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    • 2004
  • This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

A CMOS Downconversion Mixer for 2.4GHz ISM band Applications

  • Lee, Seong-Woo;Chae, Yong-Doo;Woong Jung
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2002.11a
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    • pp.77-81
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    • 2002
  • This paper demonstrates a CMOS downconversion mixer for 2.4GHz ISM band applications. The mixer, implemented in a 0.18um CMOS process, is based on the CMOS Gilbert Cell mixer, With a 2.5GHz local oscillator and a 2.45GHz RF input, the measurement results exhibit power conversion gam of -6dB, IIP3 of -6dBm, input $P_{-1dB}$ of -15 dBm, and power dissipation in mixer core of 2.7 mW with 0㏈m LO power and 1.8V supply voltage.

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