• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.3-17
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• 2003

.Package Trend -> Memory : Lighter, Thinner, Smaller & High Density => SiP, 3D Stack -> MPU : High Pin Counts & Multi-functional => FCBGA .Interposer Trend -> Via - Unfilled Via => Filled Via - Staggered Via => Stacked Via -> Emergence of All-layer Build-up Processes -> Interposer Material Requirement => Low CTE, Low $D_{k}$, Low $D_{f}$, Halogen-free .New Technology Concept -> Embedded Passives, Imprint, MLTS, BBUL etc.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.31-36
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• 1999

An efficient method for thermal modeling of QFP is Proposed. Thermal measurement data are given to verify the method. In parallel with the experiment, an exact full 3-D model calculation is also provided. One fonds that there is an excellent agreement between validation data and the efficient model data.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.178-181
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• 2010

An automotive IC voltage regulator which consists of one-chip based on a metal-oxide semiconductor field effect transistor (MOSFET) is investigated experimentally with three types of packaging. The closed type is filled with thermal silicone gel and covered with a plastic lid on the MOSFET. The half-closed type is covered with a plastic case but without thermal silicone gel on the MOSFET. Opened type is no lid without thermal silicone gel. In order to simulate the high temperature condition in engine bay, the operating circuit of the MOSFET is constructed and the surrounding temperature is maintained at $100^{\circ}C$. In the overshoot the maximum was mainly found at the half-closed packaging and the magnitude is dependent on the packaging type and the surrounding temperature. Also the impressed current decreased exponentially during the MOSFET operation.

• Journal of Institute of Control, Robotics and Systems
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• v.16 no.2
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• pp.172-176
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• 2010

Recently, LCD (Liquid Crystal Display) requires various technical challenges; high definition, high quality, big size, and low price. These demands more pixels in the fixed area of the LCD and very fine lead pitch of the driving IC which controls the pixels. Therefore, a new packaging technology is needed to meet such technical requirement. NCP (Non Conductive Paste) is one of the new packaging methods and has excellent characteristics to overcome the problems of the ACF (Anisotropic Conductive Film). In this paper, we analyzed the process of the NCP for COF (Chip on FPCB) and proposed the key design parameters of the NCP process. Through a series of experiments, we obtained the stable values of the design parameters for successful NCP process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.4
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• pp.592-597
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• 2015

3D-IC is a novel semiconductor packaging technique stacking dies to improve the performance as well as the overall size. TSV is ideal for 3D-IC because it is convenient for stacking and excellent in electrical characteristics. However, due to high-density and micro-size of TSVs, they should be tested with a non-invasive manner. Thus, we introduce a TSV test method on test prober without a direct contact in this paper. A capacitive coupling effect between a probe tip and TSV is used to discriminate small TSV faults like voids and pin-holes. Through EM simulation, we can verify the size of eye-patterns with various frequencies is good for TSV test tools and non-contact test will be promising.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.36-40
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• 2022

High-power devices, such as LEDs and radars, inevitably generate a large amount of heat, which is the main cause of shortening lifespan, deterioration in performance, and failure of electronic devices. The embedded IC process can be a solution; however, when applied to large-area substrates (larger than 8 in), there is a limit owing to the difficulty in the process after wafer thinning. In this study, an 8-in wafer-level high-power electronic package based on the embedded IC process was implemented with temporary bonding and debonding technology using double-sided thermal release tape. Good heat-dissipation characteristics were demonstrated both theoretically and experimentally. These findings will advance the commercialization of high-power electronic packaging.

• The Transactions of the Korea Information Processing Society
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• v.7 no.7
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• pp.2179-2187
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• 2000

This paper provides a heuristic analysis technique which determines an optimal number of V\ulcorner/V\ulcorner pads meeting allowable Simultaneous Switching Noise(SN) budget, early in the design phase. Until now, in determining the number of V\ulcorner/V\ulcorner pads, designers had to simulate packaging models case by case in the design phase or roughly allocate the power/ground pins in an inaccurate way according to typical design rules. However, due to the high density and frequency trends of IC technologies, the V\ulcorner/V\ulcorner pads allocation method can affect an adverse effect on IC operations, which requires more accurate and efficient methods be devised. Thus, this paper proposes an analytic V\ulcorner/V\ulcorner pads calculation method that gives a practical help for packaging designs early in the design phase. The proposed method is applied to a design example of a 1/8x208 pin plastic quad flat package (PQFP) and the results are verified through simulation using HSPICE.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.1-7
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• 2018

As the performance and density of IC (integrated circuit) devices increase, power and signal integrities in the global interconnects of advanced packaging technologies are becoming more difficult. Thus, the global interconnect technologies should be designed to accommodate increased input/output (I/O) counts, improved power grid network integrity, reduced RC delay, and improved electrical crosstalk stability. This requirement resulted in the fine-pitch interconnects with a low-k dielectric in 3D packaging or wafer level packaging structure. This paper reviews an organic-inorganic hybrid material as a potential dielectric candidate for the global interconnects. An organic-inorganic hybrid material called polysiloxane can provide spin process without high temperature curing, an excellent dielectric constant, and good mechanical properties.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.315-321
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• 2005

Chip-on-glass technology to attach IC chip directly on the glass substrate of flat panel display was studied by using induction heating body in AC magnetic field. With applying magnetic field of 230 Oe at 14 kHz, the temperature of an induction heating body made with Cu electrodeposited film of 5 mm${\times}$5 mm size and $600{\mu}m$ thickness reached to $250^{\circ}C$ within 60 seconds. However, the temperature of the glass substrate was maintained below $100^{\circ}C$ at a distance larger than 2 mm from the Cu induction heating body. COG bonding was successfully accomplished with reflow of Sn-3.5Ag solder bumps by applying magnetic field of 230 Oe at 14 kHz for 120 seconds to a Cu induction heating body of 5mm${\times}$5mm size and $600{\mu}m$ thickness.