• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.5
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• pp.372-378
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• 2009

With the increase in capacity of photovoltaic generation systems, studies are being actively conducted to improve system efficiency. In order to develop the high performance photovoltaic power system it is required to understand the physical characteristics of the solar cell. However, solar cell models have a non-linear form with many parameters entangled and conventional methods suggested to extract the parameters of the solar cell model require some kind of assumptions, which accompanies the calculation errors, thereby lowering the accuracy of the model. Therefore, in this paper a novel method is proposed to calculate the ideality factor and reverse saturation current of the solar cell from the I-V curve measured and announced by solar cell manufacturers, derive the ideal I-V curve, and then extract the series and shunt resistances value from the difference between the ideal and measured I-V curve. Also, validity of the proposed method is demonstrated by calculating the correlation between I-V curve based on modeling parameters and I-V curve actually measured through least squares method.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.4B no.2
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• pp.86-91
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• 2004

PV power generation, which directly converts solar radiation into electricity, contains numerous significant advantages. It is inexhaustible and pollution-free, silent, contains no rotating parts, and has size-independent electricity conversion efficiency. The positive environmental effect of photovoltaics is that it replaces the more polluting methods of electricity generation or that it provides electricity where none was available before. This paper highlights a novel simple method to abstract the entire parameters of the solar cell. In development, design and operation of PV power generation systems, a technique for constructing V-I curves under different levels of solar irradiance and cell temperature conditions using basic characteristic values of the PV module is required. Everyone who has performed manual acquisition and analysis of solar cell I versus V data would agree that the job is tedious and time-consuming. A better alternative is to use an automated curve tracer to print out the I versus V curves and compute the four major parameters; $V_{oc}$, $I_{sc}$, FF, and . Generally, the V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detailed parameters of the solar cell; A, $R_{s}$ and $R_{sh}$ , which satisfies the user, who aims at the analysis of the development of the PV power generation system, that being advanced simulation. In this paper, the proposed method provides us with satisfactory results to enable us to abstract the detailed parameters of the solar cell; A, $R_s$ and $R_{sh}$.>.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.1-6
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• 2007

We have analyzed the atomic structure of O/Fe(100) and interface atomic structure of MgO deposited on Fe(100) surface using LEED I/V curve analysis. As the O adsorption on the Fe(100) surface, the first substrate interlayer distance is expanded by up to 16%. For 1ML MgO deposited on Fe(100) surface, the oxygen ions of MgO are located on-top of the Fe atoms, the interlayer distance at the MgO/Fe interface are expanded. From the AIA(average intensity mixing approximation) calculation, we find the interface structure of monolayer MgO on Fe(100) system has the two interface structure with MgO/FeO/Fe(100) and MgO/Fe(100). This supports the results of EELS experiment that shown existence of stretched FeO layer and coexistance of MgO/FeO/Fe(100) and MgO/Fe(100) structure.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.278-281
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• 2011

This system can predict the maximum output about all illumination levels so that the PV system designer can design the system having the best efficiency. For the output prediction exact about the solar cell, that is the device the basis most in the PV system, the basis has to be in order to try this way. The solution based on Lambert W-function are presented to express the transcendental current-voltage characteristic containing parasitic power consuming parameters like series and shunt resistances. A simple and efficient method for the extraction of a single current-voltage (I-V) curve under the constant illumination level is proposed. With the help of the Lambert W function, the explicit analytic expression for I is obtained. And the explicit analytic expression for V is obtained. This analytic expression is directly used to fit the experimental data and extract the device parameters. The I-V curve of the solar cell was expressed through the modeling using Lambert W-function and the numerical formula where there is the difficulty could be logarithmically expressed This method expresses with the I-V curve through the modeling using Lambert W-function which adds other loss ingredients to the equation2 as to the research afterward. And the solar cell goes as small and this I-V curve can predict the power penalty in the system unit.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1966-1967
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• 2007

Photovoltaic(PV) power generation system [1-2] has been extensively studied and watched with keen interest as a clean and renewable power source. So hardware and software studies strongly indicate the feasibility of commercially producing a low cost, user-friendly solar cell curve tracer. Generally, V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detail parameters of solar cell ; A, Rs, and Rsh, which satisfies the user, who aims at the analysis of the development PV power generation system; advanced simulation. In this paper, the proposed method gives us the satisfactory results to abstract the detail parameters of solar cell ; A, Rs, and Rsh

• 한국태양에너지학회:학술대회논문집
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• 2008.04a
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• pp.241-246
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• 2008

In this paper, we analyze the I-V curve and hot-spot phenomenon caused by solar cells' serial and parallel connected circuit. The mis-match loss of parallel interconnection with low Isc string decrease lower than serially interconnected one and temperature caused by hot-spot does. Also, mis-match loss of parallel interconnection with low Voc string increase more than serially interconnected one. The string having low Voc happened hot-spot phenomenon when open circuit. The bad solar cell in string gives revere bias to good solar cell and make hot-spot phenomenon. If we consider the mis-match loss, when designing PV module and array. the efficiency of PV system might increase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.870-875
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• 2005

We measured the optogalvanic signal and discharge voltage-current(V-I) curve under the two different discharge conditions with different buffer gases, Ar, and Ne. When the Gd was used as a cathode material at low discharge current less than 10mA, a significant change was observed in the current-voltage curve. Time resolved optogalvanic signal measurement were measured by the diode laser of which wavelengths correspond to metastable transition line of these gases (Ar, Ne). From these measurements, we found that the characteristics of the V-I curve strongly depend on the Penning ionization process.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.744-746
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• 2003

A ZnO varistor with reference voltage 250V/mm was fabricated through the control of particle size in slurry and the variation of sintering conditions. It was found that to measure the flatness of the V-I characteristic curve in the small-current region and the flatness of the V-I characteristic curve in a large-current region was improved nonlinearity of the fabricated ZnO varistor. According to the IEC 60099-4 was measured the accelerated aging test and high current test of the distribution class surge varistor which is excellent in respect to the property of ZnO varistor.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.233-236
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• 1999

To investigate the effect of interference current between pairs and quasi-particles, we have calculated the change I-V characteristic curve of resistively and capacitively shunted Josephson junction with external microwave by simulation of modified Stewart-McCumber model. Such rf-induced constant-voltage steps and the immunity against to noise were found to be changed in the presence of interference current.