• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.216-219
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• 1999

A simple two-terminal cyclic current-voltage(I-V) technique is used to measure the current-transients in MOS capacitors. Distinct charging/discharging currents were measured and analyzed as a function of (1) the hold time. (2) the gate polarity during the FNT electron injection, (3) the injection fluence and (4) the annealing time after the injection had stopped. Discharging and charging current-transients were strongly dependent upon the conditions for forming the inversion layer and the density of interface traps caused during the FNT electron injection, respectively. Several tentative mechanisms were suggested in the current work.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1359-1368
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• 1989

In this paper, the composite BiCMOS transistor which combines a bipolar transistor and a MOS transistor in a cascade type, is analyzed in terms of I-V characteristics and small signal equivalent circuit. As a result, it has a larger driving capability than MOS transistor and a more extended rante of input voltage than bipolar transistor. Next, a BiCMOS differential amplifier as its application example is designed and compared with the CMOS one and the bipolar one. It increases the driving capability of the CMOS differential amp and improves the linear operation region of the bipolar differential amp.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.851-854
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• 1998

In recent years, a cost-effective voltage-source type single-ended resonant-load inverter using MOS gate power switching devices and its related resonant inverter topologies have been commonly used for induction-heated cooking appliances because of relatively-lowered switching losses, simple circuit topology, low cost, compactness and low harmonic current in utility AC side. This paper present some comparative performance evaluations of IGBTs as sample devices in each generation and MOS controlled Thyristor(MCT) incorporated into the voltage-source type single-ended load resonant inverter for induction-heating rice cookers used for consumer power electronic applications, in which the output power can be regulated on the basis of Frequency Modulation Scheme.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.37 no.9
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• pp.609-618
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• 1988

Two dimensional numericl analysis program of power VDMOSFET structure has been developed. Modeling for equipotential distribution, current flow pattern and carrier distribution are presented. I-V characteristic curves due to saturation velocity, mobility value, transconductance and on-resistance are studied by comparison of computer simulated results and exeperimental data. These are found to agree with the simulated results and experimental data.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.39 no.6
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• pp.687-695
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• 2002

Media-specific FEC techniques, suggested to confront with VoIP speech packet loss, improve speech quality at the expense of generating additional one-frame delay. In this paper, we suggest new media-specific FEC, i.e, LSF FEC technique which is able to improve speech quality with much shortened additional delay. In the proposed technique, the LSF parameters of the future frame are utilized to recover a lost packet. To evaluate performance of the proposed technique, we use ITU-T G.723.1 and G.729 Codec and apply Gilbert packet loss model and estimate MOS per every packet loss rate using PESQ speech quality estimation algorithm. The proposed technique has effect of shortening delay over from 6.5ms to 27ms compared with existing media-specific FEC techniques. Simulation results for comparison of reconstructed speech quality show this novel technique improves the MOS over 0.1 in practical lossy environment of 5 % packet loss rate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.27-31
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• 2004

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.735-736
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• 1998

Reduction of hot carrier degradation in MOS devices has been one of the most serious concerns for MOS-ULSIs. In this paper, three types of LDD structure for suppression of hot carrier degradation, such as spacer-induced degradation and decrease of performance due to increase of series resistance will be investigated. LDD-nMOSFETs used in this study had three different drain structure. (1) conventional ${\underline{S}}urface$ type ${\underline{L}}DD$(SL), (2) ${\underline{B}}uried$ type ${\underline{L}}DD$(BL), (3) ${\underline{S}}urface$urface ${\underline{I}}mplantation$ type LDD(SI). As a result, the surface implantation type LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.128-129
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• 2008

The annealing effects of $SiO_2/Si_3N_4$ stacked tunneling dielectrics were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_3N_4/SiO_2/Si_3N_4$(NON), $SiO_2/Si_3N_4/SiO_2$(ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS(Metal-Oxide-Semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field and improved electrical characteristics by annealing processes than $SiO_2$ layer.

• Speech Sciences
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• v.6
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• pp.163-179
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• 1999

For the set up, management and repair of a mobile communication system, continuous estimation of speech quality is required. Speech quality measurement can be conducted by listener's judgement in a subjective test such as MOS (Mean Opinion Score) test. However, this method is laborious, expensive and time-consuming, it is advisable to predict subjective speech quality via objective measures. This paper presents a robust objective speech quality measure, PLP-CMS (Perceptual Linear Predictive-Cepstral Mean Subtraction), which can predict subjective speech quality in mobile communication systems. PLP-CMS has a high correlation with subjective quality owing to PLP (Perceptual Linear Predictive) analysis and shows a robust performance not being influenced by PSTN (Public Switched Telephone Network) channel effects due to CMS (Cepstral Mean Subtraction). To prove the performance of our proposed algorithm, we carried out subjective and objective quality estimation on speech samples which are variously distorted in a real mobile communication system. As a result, we demonstrated that PLP-CMS has a higher correlation with subjective quality than PSQM (Perceptual Speech Quality Measure) and PLP-CD (Perceptual Linear Predictive-Cepstral Distance).

• 한국정보통신설비학회:학술대회논문집
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• 2005.08a
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• pp.329-332
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• 2005

In this paper, we describe implementation of personal media gateway (PMG) for applications over BcN networks. PMG is a TV based set-top terminal, which enables transmission of Full D1 high quality video and audio at the speed of maximum 2Mbps. It supports SIP protocol and QoS for the BcN networks. The hardware of the PMG consists of host module, audio/video codec processing module, DTMF module, and remote control I/O module. H.263 and MPEG4 software are implemented in DSP as codec for hi-directional communication and streaming, respectively. G.711 and Ogg-Vorbis are implemented as audio codec. We examined the quality of video using the Video Quality Test Equpment, which was developed by KT Convergence Lab. The experimental results show the video quality of MOS 4.1 and audio quality of MOS 4.3. We expect that PMG will be prospective business models, and create new customer value.