• 센서학회지
• /
• 제13권3호
• /
• pp.175-181
• /
• 2004

A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

• 반도체디스플레이기술학회지
• /
• 제11권2호
• /
• pp.17-21
• /
• 2012

This study developed a high-temperature, high-pressure dynamic pressure sensor using LGT(lanthanum gallium tantalate). The sensitivity of the fabricated dynamic pressure sensor was 2.1 mV/kPa and its nonlinearity was 2.5%FS. We confirmed that the high-temperature dynamic pressure sensor operated stably in high-temperature environment at $500^{\circ}C$. The developed dynamic pressure sensor using LGT is expected to be applicable not only to gas turbines but also in various industrial areas in duding airplanes and power stations.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.147-150
• /
• 2003

In this paper, We fabricated a high temperature pressure sensor using SBD(silicon- direct-bonding) wafer of $Si/SiO_2$/Si-sub structure. This sensor was very sensitive because the piezoresistor is fabricated by single crystal silicon of the first layer of SDB wafer. Also, it was possible to operate the sensor at high temperature over $120^{\circ}C$ which is the temperature limitation of general silicon sensor because the piezoresistor was dielectric isolation from silicon substrate using silicon dioxide of the second layer. The sensitivity of this sensor is very high as the measured result of D2200 shows $183.6\;{\mu}V/V{\cdot}kPa$. Also, the output characteristic of linearity was very good. This sensor was available at high temperature as $300^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.274-274
• /
• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.456-459
• /
• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.181-184
• /
• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability The sensitivity is 1.097∼1.21 mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.387-388
• /
• 2008

High temperature micro pressure sensors were fabricated by polycrystalline (poly) 3C-SiC piezoresistors formed by oxidized SOI substrates with APCVD. These have been designed by bulk micromachining below $1{\times}1mm^2$ diaphragm and Si membrane $20{\mu}m$ thick. The pressure sensitivity of fabricated pressure sensor was 0.1 mV/Vbar. The non-linearity of sensor was ${\pm}0.44%$ FS and the hysteresis was 0.61% FS.TCS of pressure sensor was -1867 ppm/$^{\circ}C$, its TCR was -792 ppm/$^{\circ}C$, and TCGF to 5 bar was -1042 ppm/$^{\circ}C$ from 25 to $400^{\circ}C$.

• 센서학회지
• /
• 제28권3호
• /
• pp.177-181
• /
• 2019

Pressure sensors are used in various industries such as automobiles, airplanes, medical equipment, and coolers. Even if the ambient temperature changes, the measurement is reliable and stable. In this study a diaphragm-type pressure sensor was used to derive a temperature-compensated pressure estimation equation for accurate pressure measurement at $100^{\circ}C$ and $-40^{\circ}C$. To understand the characteristics of the pressure sensor diaphragm with respect to temperature and pressure, experiments were conducted in temperature-variable chamber using FEM analysis to confirm that the influence of temperature effect was nonlinear. Based on the experimental results, a nonlinear method for calculating the pressure by compensating for the error due to temperature was derived. The calculated pressure value is lower than 0.5 % at low and high temperatures, and lower than 0.4 % at $22^{\circ}C$, thereby eliminating the effect of temperature.

• 전자공학회논문지
• /
• 제50권6호
• /
• pp.305-310
• /
• 2013

본 연구는 Si/$SiO_2$/Si-sub 구조의 SDB(silicon-direct-bonding) 웨이퍼를 이용한 고온용 압력센서의 제작 및 특성을 연구한 것이다. 압력센서는 SDB 웨이퍼의 첫 번째 층의 단결정 실리콘을 이용하여 압저항을 제작하기 때문에 감도가 우수하며, 두 번째 층의 산화막으로 압저항과 실리콘 기판을 절연 분리하여, 일반적인 실리콘소자의 사용 온도 한계인 $120^{\circ}C$ 이상의 고온에서도 사용이 가능하다. 제작된 압력센서는 고감도의 압력감도 및 센서 출력의 직선성 및 히스테리시스 특성이 매우 우수함을 알 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제14권5호
• /
• pp.405-409
• /
• 2001

This paper describes fabrication and characteristics of metal thin-film pressure sensor for working at high temperature. The proposed pressure consists of a chrom thin-film, patterned on a Wheat stone bridge configuration, sputter-deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097∼1.21mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43%FS.