The Fabrication of a Ceramic Pressure Sensor Using Tantalum Nitride Thin-Films

질화탄탈박막을 이용한 세라믹 압력센서의 제작

  • 정수용 (동서대학교 정보통신공학부 메카트로닉스공학) ;
  • 최성규 (동서대학교 정보통신공학부 메카트로닉스공학) ;
  • 이종춘 (경남정보대 디지털엔지니어링학부) ;
  • 정귀상 (동서대학교 정보통신공학부 메카트로닉스공학전공)
  • Published : 2002.07.01

Abstract

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability The sensitivity is 1.097∼1.21 mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

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