• Title/Summary/Keyword: High power module

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Development of a 4kW, High Efficiency, Series-Resonant DAB Converter (4kW급 고효율 직렬 공진형 DAB 컨버터 개발)

  • Sangmin, Lee;Gil-Dong, Kim;Seung-Hwan, Lee
    • The Transactions of the Korean Institute of Power Electronics
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    • v.27 no.6
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    • pp.498-506
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    • 2022
  • This study proposes a design methodology for bidirectional, series-resonant, dual-active bridge (SRDAB) converters. The circuit parameters of the SRDAB converters are designed by considering the output power and efficiency of the converter. The proposed method can be used to design a high-power, high-efficiency SRDAB converter. A voltage controller is employed to manipulate the output voltage of the converter, and the controller gains are selected using the transfer function and frequency response of the controller. Simulation results show that the output power of the designed SRDAB converter is 2 kW per converter module as designed. In addition, the performance of the voltage controller is evaluated using the simulation and experimental results. The output voltage follows the reference voltage within 10 ms under the step change of the reference command. The output voltage also follows the reference voltage under the step load change. The efficiency of the designed SRDAB converter is 95.6%.

Design and Operation Characteristics of 2.4MJ Pulse Power System for Electrothermal-Chemical (ETC) Propulsion (II) (전열화학추진용 2.4MJ 펄스파워전원의 설계와 동작특성(II))

  • Jin, Y.S.;Lee, H.S.;Kim, J.S.;Whang, D.W.;Kim, J.S.;Chu, J.H.;Jung, J.W.;Moon, H.J.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1603-1605
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    • 2001
  • Eight 300kJ modularized capacitor-banks have been constructed. These modules have been installed and assembled to make a 2.4MJ pulse power system (PPS). This 2.4MJ PPS was developed to be used as a driver of an electrothermal-chemical (ETC) gun. Each capacitor bank has six 22kV, 50kJ capacitors connected in parallel. A triggered vacuum switch (TVS-43) was adopted as a main pulse power-closing switch in each module. The module also contains a crowbar circuit made of three high-voltage diode-stacks, a multi-tap inductor and an energy-dumping resistor. Various current shapes have been formed by a sequential firing of multiple capacitor banks. Resistive dummy load has been used and various combinations of experimental parameters, such as charging voltage, trigger time and inductance, were tested to make flexible current shapes.

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Design of a Cost-Effective Hybrid-Type PBEx Providing a High Power Budget in an Asymmetric 10G-EPON

  • Kim, Kwangok;Lee, Sangsoo;Lee, Jonghyun;Jang, Younseon
    • ETRI Journal
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    • v.34 no.6
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    • pp.838-846
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    • 2012
  • This paper proposes a cost-effective hybrid-type power budget extender (PBEx) that can provide a high power budget of over 45 dB in an asymmetric 10-Gb/s Ethernet passive optical network (10/1G-EPON). The hybrid-type 10/1G-EPON PBEx comprises a central office terminal (COT) and remote terminal (RT) module supporting four channels and uses a coarse wavelength division multiplexing (CWDM) technology between the COT and RT for a reduction of fiber cost and efficient access network design. The proposed 10/1G-EPON PBEx can provide over a 40-km reach and 128-way split per CWDM wavelength with no modification of a legacy 10/1G-EPON system and can satisfy the error-free service in $10^{10}$ packet transmission.

A Gate Drive IC for Power Modules with Shoot-through Immunity (상단락 방지용 모듈을 구동하기 위한 게이트 구동 IC)

  • Seo, Dae-Won;Kim, Jun-Sik;Park, Shi-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.7
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    • pp.580-583
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    • 2009
  • This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

Development of AC Electric Vehicle Propulsion System (Converter/Inverter) using IPM Switching Device (IPM 스위칭 소자를 적용한 AC 전동차 추진제어장치 (Converter/Inverter) 개발)

  • Kim T. Y.;Kno A. S.;Hwang K. C.;Choi J. M.;Kim J. B.
    • Proceedings of the KIPE Conference
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    • 2004.07a
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    • pp.298-302
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    • 2004
  • In this paper, AC electric vehicle propulsion system(Converter/Inverter) using high power semiconductor, UM(Intelligent Power module) is proposed. 2-Parallel operation of two PWM converter is adopted for increasing capacity of system and the VVVF inverter control is used a mixed control algorithm, where the vector control strategy at low speed region and slip-frequency control strategy at high speed region. The proposed propulsion system is verified by experimental results with a 1,350kW converter and 1,100kVA inverter with four 210kW traction motors.

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A Three-Phase Converter with High Power Factor Using Soft-Switching Module (소프트 스위칭 모듈을 이용한 3상 고역률 컨버터)

  • 김재홍;정진규;백승택;한병문;김현우
    • Proceedings of the KIPE Conference
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    • 1999.07a
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    • pp.663-666
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    • 1999
  • This paper describes a three-phase converter with high power factor using a scheme of discontinuous current mode(DCM). The proposed system can replace the conventional diode bridge with step-up chopper which is used as a converter for adjustable speed drive. In this system, the current of reactor is zero at turn-on instance because of operation in DCM, while the switch turns off at the instance of maximum current. A soft-switching scheme with lossless snubber was proposed. Therefore, a zero-voltage switching at turn off can be achived by lossless snubber and zero-current switching at turn on can be obtained by operating under DCM. A theoretical analysis and computer simulations with PSpice were done to verify the operation of the proposed system. Also a prototype of hardware system was built and tested for verifying the feasibility of proposed system.

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A Gate Drive IC for Power Modules with Shoot-Through Immunity (상단락 방지용 모듈을 구동하기 위한 게이트 구동 IC)

  • Seo, Dae-Won;Kim, Jun-Sik;Park, Shi-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.81-82
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    • 2009
  • This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

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Development of a Train Performance Simulation S/W for The Performance Analysis of High Speed Railway System(2) (고속전철 시스템 성능해석을 위한 열차 주행시뮬레이션 S/W 개발(2))

  • Lee, Tae-Hyung;Hyun, Seung-Ho;Chung, Heuing-Chai;Hwang, Hee-Soo
    • Proceedings of the KIEE Conference
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    • 2000.07b
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    • pp.1381-1383
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    • 2000
  • A multi-train operation simulation software is under development, in this G7 Project for a High Speed Train System, to simulate the running performance, power consumption, signalling and operation. In the first stage, a Train Performance Simulation (TPS) software is introduced in this paper. This is a core module of whole system and gives some parameters of a train, e.g., its position, speed traction and braking power and electric power system state, etc. In this paper, calculation technique was used for voltage drop at the train's positions and major posts along the catenary line. The final program will be used as an evaluation tool for system performance in constructing a new line or introducing a new train system.

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RE circuit simulation for high-power LDMOS modules

  • fujioka, Tooru;Matsunaga, Yoshikuni;Morikawa, Masatoshi;Yoshida, Isao
    • Proceedings of the IEEK Conference
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    • 2000.07b
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    • pp.1119-1122
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    • 2000
  • This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

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Sequence Pulse Modulation for Voltage Balance in a Cascaded H-Bridge Rectifier

  • Peng, Xu;He, Xiaoqiong;Han, Pengcheng;Lin, Xiaolan;Shu, Zeliang;Gao, Shibin
    • Journal of Power Electronics
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    • v.17 no.3
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    • pp.664-673
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    • 2017
  • With the development of multilevel converters, cascaded single-phase H-bridge rectifiers (CHBRs) has become widely adopted in high-voltage high-power applications. In this study, sequence pulse modulation (SPM) is proposed for CHBRs. SPM is designed to balance the dc-link voltage and maintain the smooth changes of switch states. In contrast to phase disposition modulation, SPM balances the dc-link voltage even after removing the load of one submodule. The operation principle of SPM is deduced, and the unbalance degree of SPM is analyzed. All the proposed approaches are experimentally verified through a prototype of a four-module (nine-level) CHBR. Conclusions are drawn in accordance with the results of SPM and its imbalance degree analysis.