• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1828-1830
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• 1996

In this study, We developed the optical fiber incorporated high-voltage underground power cable which is combined optical fibers with conventional high-voltage underground power cable. Optical-Unit that optical fiber is inserted in stainless tube is tested, and we got good results enough to safe optical fibers. Also we put the optical fiber incorporated high-voltage underground power cable to the test of electrical characteristics and optical characteristics, we knew that the electrical characteristics were the same characteristics as conventional high-voltage underground power cable and the transmission loss change was almost zero.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1416-1417
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• 2007

The high frequency pulsed power system is widely available for use in high frequency generator applications. We designed and fabricated our own high frequency pulsed power system to obtain very sort pulse width and high peak value and investigated microbe removal characteristics using it. This paper introduces a simple high voltage high frequency pulsed power system for removing various bacteria caused by dirty water. This system include power supply circuit, switching MOSFET, and flyback converter. We can also control the switching using a PIC one chip microprocessor. As a result, we can obtain good removing characteristics of various bacteria by adjusting the charging voltage, the pulse repetition rate and the electrical field inducing time.

• Proceedings of the KIPE Conference
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• 2002.11a
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• pp.213-217
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• 2002

Power devices for high power drivers that need high switching speed (IGCT, HVIGBT) have been continuously developed. However, serial and parallel connections using several much cheaper, lower power capacity of devices than an expensive high power device are very useful methods in the aspect of cost down and high power application. Even the current and voltage unbalance problem is occurred at each devices. This unbalance characteristics are mainly caused by the differences of physical characteristics of each devices and the line inductance (stray inductance) of bus bars that consist of current path. This paper deals simulation analysis of serial connection of IGCTs and parallel connection of IGCTs using physical model of devices. And also, introduces the method to reduce the voltage and current unbalance problem.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.4
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• pp.923-931
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• 2017

A power grid is one of the most complex networks and is critical infrastructure for society. To understand the characteristics of a power grid, complex network analysis has been used from the early 2000s mainly for US and European power grids. However, since the power grids of different countries might have different structures, the Korean power grid needs to be examined through complex network analysis. This paper performs the analysis for the Korean power grid, especially for high-voltage transmission networks. In addition, statistical and small-world characteristics for the Korean power grid are analyzed. Generally, the Korean power grid has similar characteristics to other power grids, but some characteristics differ because the Korean power grid is concentrated in the capital area.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1516-1517
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• 2007

This paper investigated the breakdown effect of the CMOS device by impact of high power electromagnetic wave. The experiments employed a waveguide to study the current characteristics of CMOS device broken by high power electromagnetic wave. The CMOS device were composed of a LED drive circuit for visual discernment. Also CMOS device broken by high power electromagnetic wave was observed by power current. The CMOS device were broke by high power electromagnetic wave at about 10 kV/m and when power current is 75 mA. Based on the result, CMOS devices should show plan to protect the CMOS devices by high power electromagnetic wave. And the database from this experiment should provide the basis for future investigation.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.8
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• pp.945-952
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• 2015

Power amplification device which is matched to $50{\Omega}$ in order to achieve a high efficiency of a power amplifier using a GaN power amplification device, since there is a limit of application frequency bands, output power, efficiency characteristics selection, in this study based on the measurement data through the source/load-pull test, high output power and to extract quantitative input and output impedance that matches the design objectives of high output power, high efficiency, an implementation of the high efficiency power amplifier. Implemented power amplifier is shows 25watt(44dBm), PAE of 66-76% characteristics in the frequency band of 2.7-3.1 GHz.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.331-338
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• 2005

The rapid advances in high power light sources and arrays as encountered in incandescent lamps have induced dramatic increases in die heat flux and power consumption at all levels of high power LED packaging. The lifetime of such devices and device arrays is determined by their temperature and thermal transients controlled by the powering and cooling, because they are usually operated under rough environmental conditions. The reliability of packaged electronics strongly depends on the die attach quality, because any void or a small delamination may cause instant temperature increase in the die, leading sooner or later to failure in the operation. Die attach materials have a key role in the thermal management of high power LED packages by providing the low thermal resistance between the heat generating LED chips and the heat dissipating heat slug. In this paper, thermal transient characteristics of die attach in high power LED package have been studied based on the thermal transient analysis using the evaluation of the structure function of the heat flow path. With high power LED packages fabricated by die attach materials such as Ag paste, solder paste and Au/Sn eutectic bonding, we have demonstrated characteristics such as cross-section analysis, shear test and visual inspection after shear test of die attach and how to detect die attach failures and to measure thermal resistance values of die attach in high power LED package. From the structure function oi the thermal transient characteristics, we could know the result that die attach quality of Au/Sn eutectic bonding presented the thermal resistance of about 3.5K/W. It was much better than those of Ag paste and solder paste presented the thermal resistance of about 11.5${\~}$14.2K/W and 4.4${\~}$4.6K/W, respectively.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.534-535
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• 2012

The characteristics of wireless power transfer is achieved at high frequencies in short range magnetic resonant wireless power transfer system. Use PFC pre-regulator for power supply of high frequency inverter. Supplied power to high power factor and high efficiency. Accordingly, the input voltage is 110V-220V. The designed of 175W Class with the output voltage of 385V. As a experiment result, maximum power factor and maximum efficiency measured 99% and 97% respectively. Therefore, in this paper, the design of a inductor which is the most important element in PFC converter for short range magnetic resonance wireless power transfer system was studied. Used an CS330125 core through the designed of 175W class. Examination results power loss was 0.2%.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.16-19
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• 2000

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.