Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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LIGBT with Dual Cathode for Improving Breakdown Characteristics

  • Kang, Ey-Gook (Department of Electrical Engineering, Korean University) ;
  • Moon, Seung-Hyun (Department of Electrical Engineering, Korean University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korean University)
  • Published : 2000.12.01
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Abstract

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.

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