Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2007.07a
- /
- Pages.1516-1517
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- 2007
Current Characteristics of CMOS device Broken by Intentional High Power Electromagnetic Wave
의도 고출력 전자파에 의해 오동작 되는 CMOS소자의 전류특성
- Hwang, Sun-Mook (INHA University) ;
- Hong, Joo-Il (INHA University) ;
-
Han, Seung-Mook
(INHA University)
;
- Park, Shin-Woo (INHA University) ;
-
Huh, Chang-Su
(INHA University)
- Published : 2007.07.18
Abstract
This paper investigated the breakdown effect of the CMOS device by impact of high power electromagnetic wave. The experiments employed a waveguide to study the current characteristics of CMOS device broken by high power electromagnetic wave. The CMOS device were composed of a LED drive circuit for visual discernment. Also CMOS device broken by high power electromagnetic wave was observed by power current. The CMOS device were broke by high power electromagnetic wave at about 10 kV/m and when power current is 75 mA. Based on the result, CMOS devices should show plan to protect the CMOS devices by high power electromagnetic wave. And the database from this experiment should provide the basis for future investigation.
Keywords