• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.165-169
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the 'ideal' breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.

• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.13-21
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• 2014

Technology for high power devices has made impressive progress in increasing the current density of power semiconductor, system module, and design optimization, which realize high power systems with heterogeneous functional integration. Depending on the performance development of high power semiconductor, packaging technology of high power device is urgently required for efficiency improvement of the device. Power device packaging must provide superior thermal management due to high operating temperature of power modules. Here we, therefore, review critical challenges of typical power electronics packaging today including core assembly processes, component materials, and reliability evaluation regulations.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.556-559
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• 2006

We successfully developed a high performance and highly reliable blazed GxL device with a high optical efficiency and a high contrast ratio. The device demonstrated superior resistance against a high power laser, which is suitable for a large-area laser projector. We operated the world's largest laser projection screen using this device at the 2005 World Exposition in Aichi, Japan, problem free.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
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• pp.154-158
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• 2004

Power inductor is usually used in the field of the power circuit of a cellular phone, TFT LCD module etc.. This paper presents the development process of Power Inductor Full Automation Winding/Welding System for TFT LCD. This process, the process algorithm, high precision welding current control, design of welding head, high speed, high precision feeding mechanism, and user interface process control program technologies are included.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.291-293
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• 2003

A semiconductor switch-based fast hi-polar high voltage pulse generator is proposed in this paper The proposed pulse system is made of a thyristor based-rectifier, DC link capacitor, a push-pull resonant inverter, a high voltage transformer. secondary capacitor, a high voltage IGBT & diode stacks, and a variable capacitor. The proposed system makes hi-polar high voltage sinusoidal waveform using resonance between leakage inductance of the transformer and secondary capacitor and transfers energy to output load at maximum of the secondary capacitor voltage. Compared to previous hi-polar high voltage pulse power supply using nonlinear transmission line, the proposed pulse power system using only semiconductor switches has simple structure and gives high efficiency

• 전력전자학회:학술대회논문집
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• 전력전자학회 2018년도 전력전자학술대회
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• pp.210-212
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• 2018

A new switching mode has been proposed to obtain high power factor and low THD in single stage AC-DC converter. The conventional voltage mode control in critical conduction mode distorts input current shape with poor THD in flyback topology. Once TRIAC dimmer is connected, visible flicker in the LED lamp is easily detected due to a lack of TRAIC holding current near the input voltage zero cross. The newly proposed method can shape the input current by providing a desired reference voltage so that low THD is obtained by ideal sinusoidal input current in case of no dimmer connection and flat input current performs good TRIAC dimmer compatibility in phase-cut dimming condition. To confirm the validity of the proposed method, theoretical analysis and experimental result from 8W dimmable LED lighting system are presented.

• ETRI Journal
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• 제16권4호
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1785-1787
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• 2003

본 논문에서는 현재 대용량 전력변환 소자인 사이리스터는 해남-제주간의 HVDC변환소에 채용되어 운전중에 있고, BTB 및 SVC등에 채용되고 있으며, 향후 FACTS, 남북 전력계통연계, 동북아 계통연계 등 전력변환용으로 사용될 부품으로 사용범위가 날로 증가하고 있는 2,208개의 사이리스터의 수명 및 신뢰성을 평가하기 위해 고온직류 blocking 가속열화시험조건에 대해서 기술하였다.