Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Field Ring of High Voltage Characteristics Improve for the Power Semiconductor

전력반도체 고내압 특성 향상을 위한 필드링 최적화 연구

  • Nam, Tae-Jin (Department of Energy Semiconductor Engineering, Far East University) ;
  • Jung, Eun-Sik (Department of Electrical Engineering, Korea University) ;
  • Jung, Hun-Suk (Department of Energy Semiconductor Engineering, Far East University) ;
  • Kim, Sung-Jong (Department of Energy Semiconductor Engineering, Far East University) ;
  • Kang, Ey-Goo (Department of Energy Semiconductor Engineering, Far East University)
  • 남태진 (극동대학교 대학원 에너지반도체학과) ;
  • 정은식 (고려대학교 전기공학과) ;
  • 김성종 (극동대학교 대학원 에너지반도체학과) ;
  • 정헌석 (극동대학교 대학원 에너지반도체학과) ;
  • 강이구 (극동대학교 대학원 에너지반도체학과)
  • Received : 2012.02.18
  • Accepted : 2012.02.24
  • Published : 2012.03.01
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Abstract

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the 'ideal' breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.

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References

  1. E. G. Kang, B. J. Kim, and Y. H. Lee, J. KIEEME, 23, 1 (2010).
  2. A. W. Ludikhuize, IEEE Trans. Electron Dev., 38, 1582 (1991). https://doi.org/10.1109/16.85153
  3. D. G. Bae and S. K. Chung, Solid-State Electron., 42, 349 (1998). https://doi.org/10.1016/S0038-1101(97)00201-3
  4. C. Y. Chang and C. T. Sune, Elec. Dev. Lett., EDL_7, 35 (1986).
  5. V. Boisson, M. L. Helley, and J. P. Chante, IEEE Trans. Electron Dev., ED_32, 838 (1985). https://doi.org/10.1109/T-ED.1985.22029
  6. J. He, M. Chan, X. Zhang, and Y. Wang, Solid-State Electron., 50, 1375 (2006). https://doi.org/10.1016/j.sse.2006.06.012
  7. J. He, R. Huang, X. Zhang, Y. Y. Wang, and X. B. Chen, Solid-State Electron., 45, 79 (2001). https://doi.org/10.1016/S0038-1101(00)00226-4
  8. Y. S. Hong, H. S. Chung, E. S. Jung, and E. G. Kang, J. KIEEME, 24, 794 (2011).