Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Process and Structure Design for High Power Reverse-Conducting Gate Commutated Thyristors (RC- GCTs)

고전압 역도통 Gate Commutated Thyristor (RC-GCT) 소자의 공정 및 구조 설계

  • Kim, Sang-Cheol (Power Semiconductor Research Group Korea Electrotechnology Research Institute) ;
  • Kim, Eun-Dong (Power Semiconductor Research Group Korea Electrotechnology Research Institute) ;
  • Zhang, Chang-Li (Power Semiconductor Research Group Korea Electrotechnology Research Institute) ;
  • Kim, Nam-Kyun (Power Semiconductor Research Group Korea Electrotechnology Research Institute) ;
  • Baek, Do-Hyun (Power Semiconductor Research Group Korea Electrotechnology Research Institute)
  • Published : 2001.07.01
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Abstract

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

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