• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• Journal of Powder Materials
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• v.14 no.2 s.61
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• pp.97-100
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• 2007

The magnetic alloys of Cu-Fe ($Cu_{50}Fe_{50},\;Cu_{80}Fe_{20}\;and\;Cu_{90}Fe_{10}$) were prepared by a mechanical alloying method and their structural and magnetic behaviors were examined by X-ray diffraction and Mossbauer spectra. The magnetization curves did not distinctly show the saturation at 70 kOe for the concentrated alloys of $Cu_{80}Fe_{20}\;and\;Cu_{90}Fe_{10}$. The Mossbauer spectrum of $Cu_{80}Fe_{20}$ at room temperature shows one Lorentzian line of the paramagnetic phase, whereas the Mossbauer spectrum of $Cu_{90}Fe_{10}$ consists of sextet Lorentzian line at room temperature and a centered doublet line. The Mossbauer spectra of $Cu_{90}Fe_{10}$ measured in the temperature ranges from 13 to 295 K, implies that $Cu_{90}Fe_{10}$ to consists of two magnetic phases. One superimposed sextet corresponds to the ferromagnetic iron in Cu and the other one indicates the superparamagnetic iron rich phase.

• Journal of the Korean Magnetic Resonance Society
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• v.21 no.4
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• pp.131-134
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• 2017

Proton detected Heteronuclear Multiple Quantum Coherence (HMQC) and Heteronuclear Single Quantum Coherence (HSQC) essentially provide the same information - correlation of the chemical shift of the proton to J-coupled hetero nuclei such as $^{13}C$ or $^{15}N$ nuclei. This paper is a practical note for the students who ask which one is better and which methods they use routinely. Artifact suppression using phase cycling and gradient pulses are discussed.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.181-186
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• 1997

Time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of epitaxially grown MgO layers on a TiC(001). The hetero-epitaxial MgO layer was able to be deposited by thermal evaporation of magnesium onto the TiC(001) surface and subsequent exposure of oxygen at room temperature. A slight heating of the substrate at around $300^{\circ}C$ was necessary to overcome a thermal barrier for the ordering. The well-ordered MgO structure was confirmed with the 1$\times$1 LEED pattern. TOF-ICISS was useful in studying interface structure between oxide and substrate. The results revealed that the MgO layer is formed at the on-top sites of the TiC(001) substrate and the lateral lattice constant of MgO layer is the same as that of the TiC substrate. The MgO was deposited within two layers on the most parts of the surface.

• Journal of Adhesion and Interface
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• v.14 no.3
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• pp.135-145
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• 2013

Epoxy resin compositions were studied on the view of self-extinguishing properties without retardant additives and suitability as materials of eco-friendly EMC (Epoxy molding compound). Cured epoxy and phenolic resin composition having conjugated double bond of aromatic structure exhibited self-extinguishing properties and low heat release capacity. In this study, the structure of long conjugated double bond of hetero-atom type azomethyne group between conjugated double bonds of aromatic structure showed lower heat release capacity. Low heat release capacity seemed to be related with high reaction enthalpy, $T_g$ and reactivity affected by hetero-atom structure in azomethyne group.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.155-162
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• 2002

The sensing properties of carbon monooxide were investigated as a function of mixing ratio and the lamination structure of 3mol% ZnO-doped $SnO_2$ and 3mol% $SnO_2$-doped ZnO. The lamination structures were fabricared monolayer, double layer, and hetero layer of $SnO_2$, Zno, and theirs mixture composition using thick film process. There was no second phase by the reaction of $SnO_2$ and ZnO. The conductance was decreased by the addition of ZnO in $SnO_2$, but it was increased with the addition of $SnO_2$ in ZnO. The conductance was increased with temperature and the inlet of CO. There was no improvement of sensitivity in the structure of mono- and double-layer. The hetero-layer structure, however, of $SnO_2$ 3ZnO-ZnO $3SnO_2$ showed the higher resistivity and the highest sensitivity. Ohmic characteristics was confirmed by the linear properties for I-V measurements.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1545-1553
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• 1989

The ohmic contact behavior in HEMT structure was compared with that in MESFET one throughout the specific contact resistance and microstructural change in both structures. A Au-Ge-Ni based metallization scheme was used and the alloying temperature of the ohmic materials was changed from 330\ulcorner to 550\ulcorner. The alloying temperature to obtain the minimum specific contact resistance in HEMT structure was 60k higher than that in MESFET. The volume fraction of NiAs (Ge) in MESFET structure increases with alloying temperature and/or the alloying time, which makes the decrease of specific contact resistance at the initial stage of ohmic metallization. In contrast, the volume fraction of NiAs(Ge) in HEMT structure was not dependent upon the specific contact resistance, which implies that the ohmic contacts are dominantly formed by the Ge diffusion to 2-DEG(two dimensional electron gas) layer.

• New & Renewable Energy
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• v.4 no.2
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• Reproductive and Developmental Biology
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• v.29 no.1
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• pp.15-18
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• 2005

This study was carried out to analyze the structure of the gene related to porcine stress syndrome (PSS) through cloning from PSS heterozygous pigs and to examine hereditary type associated with PSS. The results obtained from the study were summarized as follows: Amino acid arginine and cysteine exist in dominant gene, N and harmfully recessive gene, n, respectively. It was confirmed that such genes exists as alleles in the sixth chromosome related to PSS. These allelic genes might be inherited according to Mendelian law.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.131-144
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• 2015

An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material - gate CNTFET(HMG - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the performance parameters of circuits have been calculated and the optimum combinations of ${\Phi}_{M1}/{\Phi}_{M2}/{\Phi}_{M3}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product(PDP). We show that, compared to a traditional CNTFET - based circuit, the one based on HMG - CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG - CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.