A Study on HEMT Device Process (Part II. Ohmic Contact Resistance in GaAs/AlGaAs Hetero-Structure)

HEMT소자 공정 연구 (Part II. HEMT 구조에서의 Online 접촉저항)

The ohmic contact behavior in HEMT structure was compared with that in MESFET one throughout the specific contact resistance and microstructural change in both structures. A Au-Ge-Ni based metallization scheme was used and the alloying temperature of the ohmic materials was changed from 330\ulcorner to 550\ulcorner. The alloying temperature to obtain the minimum specific contact resistance in HEMT structure was 60k higher than that in MESFET. The volume fraction of NiAs (Ge) in MESFET structure increases with alloying temperature and/or the alloying time, which makes the decrease of specific contact resistance at the initial stage of ohmic metallization. In contrast, the volume fraction of NiAs(Ge) in HEMT structure was not dependent upon the specific contact resistance, which implies that the ohmic contacts are dominantly formed by the Ge diffusion to 2-DEG(two dimensional electron gas) layer.