• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2594-2596
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• 1999

Recently, white good market has interest with inverter product, which has merit to on/off type with respect to energy saving and noise. But, inverter product's cost is rising, because of adding inverter circuit component. To reduce cost, inverter gate drive trend is using HVIC which needs only single voltage. Also using HVIC, designer can compact PCB'size. This paper shows application technique and key point of designing HVIC

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.323-326
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• 2002

본 논문에서는 IPv4 및 IPv6 기반에서 gif 터널링을 방법을 이용한 멀티캐스트 실험 방법을 제시한다. 실험은 ETRI-SNU 자체 개발한 HVIC 툴과 영국의 UCL에서 개발한 vic, nte 응용을 테스트 하였으며, 실험에 이용된 망은 최근 개통된 한-유럽간 연결된 트랜스 유라시아(TEIN: TransEurasia Information Network)망과 ETRI-KOREN-SNU를 잇는 ATM 기반의 IPv6 native 망을 이용하였다. 실험은 크게 3가지 측면이 고려되었다. 즉 1차 IPv4 기반에서 IPv6 터널링 방법을 이용한 실험, 2차 IPv6 기반에서 IPv6 터널링 방법을 이용한 실험과, 3차 ATM 기반의 IPv6 순수 망을 이용한 실험이다.

• 대한전자공학회논문지SD
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• 제45권10호
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• pp.7-14
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• 2008

본 논문에서는 $1.0{\mu}m$ BCD 650V 공정을 이용하여 향상된 잡음 내성과 높은 전류 구동 능력을 갖는 고전압 구동 IC를 설계하였다. 설계된 고전압 구동 IC는 500kHz의 고속 동작이 가능하고, 입력 전압의 범위가 최대 650V이다. 설계된 IC에 내장된 상단 레벨 쉬프터는 잡음 보호회로와 슈미트 트리거를 포함하고 있으며 최대 50V/ns의 높은 dv/dt 잡음 내성을 가지고 있다. 또한 설계된 숏-펄스 생성회로가 있는 상단 레벨 쉬프터의 전력 소모는 기존 회로 대비 40% 이상 감소하였다. 이외에도 상 하단 파워 스위치의 동시 도통을 방지하는 보호회로와 구동부의 전원 전압을 감지하는 UVLO(Under Voltage Lock-Out) 회로를 내장하여 시스템의 안정도를 향상시켰다. 설계된 고전압 구동 IC의 특성 검증에는 Cadence사의 spectre 및 PSpice를 이용하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.11-12
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• 2009

In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.463-464
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• 2008

As the demands of LCD and PDP TV are increasing, the high performance HVICs(High Voltage Gate Driver ICs) technology is becoming more necessary. In this paper, we designed the HVIC that has enhanced noise immunity and high driving capability. It can operate at 500KHz switching frequency and permit 600V input voltage. High-side level shifter is designed with noise protection circuit and schmitt trigger. Therefore it has very high dv/dt immunity, the maximum being 50V/ns. The HVIC was designed using $1{\mu}m$ BCD 650V process and verified by Spectre and PSpice of Cadence inc. simulation.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.580-583
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1324-1326
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• 1998

To drive motor or heating machine, it needs the electric power system like the apparatus of inverter. This electric power system obviously comprises power switching devices and drivers to run them. And this system has the topology comprised one/many arm(s), - each arm has high side switching device and low side switching device. Transformer, photocoupler, and HVIC having functions of isolation and level shift which are important thing to drive high side switching device are used as component of drivers in conventional apparatus. Piezoelectric transformers are proposed in this paper, and applied to drive high side swiching device. Through experiments, the possiblities of driving high side switching device are presented and the problems are mooted concurrently. But, we also consider a counterplan for solving the mooted trouble issues.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.81-82
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.232-234
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• 2002

Due to development of power electronics technology, power conversion system are tend to small size, easy to use and light weight. Especially motor control system have increased concerns and interests about IPM(Intelligent Power Module) inverter, which contains protection circuit, drive circuit and power devices. So, we manufactured 3-phase inverter using DIP-IPM(Dual in-line package IPM) PS21245- E(1.5 Kw) made by MITSUBISHI Electric. Some of these features include -HVIC to Provide level shifting and gate drive for high-side IGBTs. The interface circuit between pwm controller and DIP-IPM can made by direct connection. In order to validate dynamic performance of the proposed system, the actual experiment worked out at wide speed range. The developed system is shown as a good dynamic characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1599-1602
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• 1994

Recently, failure of COS(cut out switch) due to contamination has been increased. This paper is on the development of the contamination COS. 1 We designed a porcelain insulator of alternate shed for anti-contamination COS. 2 The COS was coated with HVIC(silicone) to improve resistivity to contamination. 3 The FOV characteristics of COS were examined to obtain dry FOV, wet FOV and contamination FOV.