• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.62-62
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• 2009

Electrical properties of SGS-TFT with 5/5 ${\mu}m$ channel width and length which gate insulator is made of 20nm $SiO_2$ and 80nm $SiN_x$ was fabricated and measured at various temperatures. The field-effect mobility was decreased from 86.25 to 80.42 $cm^2/Vs$ and threshold voltage also decreased from -1.5792 to -1.0492 V, when temperature is increased from room temperature to $100^{\circ}C$. Subthreshold swing, also, increased from 0.3212 to 0.4818 V/dec and $I_{on/off}$ ratio decreased from $5.05{\times}10^7$ to $6.93{\times}10^5$.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.216-221
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• 2010

The microstructure, electrical properties, and DC-accelerated aging behavior of the Zn-Pr-Co-Cr-Y-Er (ZPCC-YE) varistors were investigated for different amounts of erbium oxide ($Er_2O_3$). The microstructure consisted of zinc oxide grain and an intergranular layer ($Pr_6O_{11}$, $Y_2O_3$, and $Er_2O_3$-rich phase) as a secondary phase. The increase of $Er_2O_3$ amount decreased the average grain size and increased the sintered density. As the $Er_2O_3$ amount increased, the breakdown field increased from 5094 V/cm to 6966 V/cm and the nonlinear coefficient increased from 27.8 to 45.1. The ZPCC-YE varistors added with 0.5 to 1.0 mol% $Er_2O_3$ are appropriate for high voltage, with high nonlinearity and stability against DC-accelerated aging stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.368-368
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• 2010

Using TFTs crystallized by MICC and ELA, electron mobility and threshold voltage were measured according to various substrate temperature from $-40^{\circ}C$ to $100^{\circ}C$. Basic curve, $V_G-I_D$, is also measured under various stress time from 1s to 10000s. Consequently, due to the passivation effect and number of grains, mobility of MICC is varied in the range of -8% ~ 7.6%, while that of ELA is varied from -11.04% ~ 13.25%. Also, since $V_G-I_D$ curve is dominantly affected by grain size, active layer interface, the graph remained steady under the various gate bias stress time from 1s to 10000s. This proves the point that MICC can be alternative technic to ELA.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.22-22
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• 2010

0.1~5.0 at% CuO doped ZnO specimens were fabricated by a commercial ceramic process and sintered at 900~$1200^{\circ}C$ for 3h in air. The relative densities were over 97% for all samples and average grain size increased with CuO doping. The defect trap levels i.e. ionization energies of defects were increased linearly with CuO contents as 0.2 eV to 0.7 eV by using admittance spectroscopy and dielectric functions. The apparent activation energies of grain boundaries were varied but in the range of 0.96~1.1 eV. Dielectric constant were increased with CuO contents and sintering temperatures.

• Electronic Materials Letters
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• v.14 no.6
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• pp.725-732
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• 2018

The thermoelectric and transport properties of Ti-doped FeVSb half-Heusler alloys were studied in this study. $FeV_{1-x}Ti_xSb$ (0.1 < x < 0.5) half-Heusler alloys were synthesized by mechanical alloying process and subsequent vacuum hot pressing. After vacuum hot pressing, a near singe phase with a small fraction of second phase was obtained in this experiment. Investigation of microstructure revealed that both grain and particle sizes were decreased on doping which would influence on thermal conductivity. No foreign elements pick up from the vial was seen during milling process. Thermoelectric properties were investigated as a function of temperature and doping level. The absolute value of Seebeck coefficient showed transition from negative to positive with increasing doping concentrations ($x{\geq}0.3$). Electrical conductivity, Seebeck coefficient and power factor increased with the increasing amount of Ti contents. The lattice thermal conductivity decreased considerably, possibly due to the mass disorder and grain boundary scattering. All of these turned out to increase in power factor significantly. As a result, the thermoelectric figure of merit increased comprehensively with Ti doping for this experiment, resulting in maximum thermoelectric figure of merit for $FeV_{0.7}Ti_{0.3}Sb$ at 658 K.

• Journal of Biosystems Engineering
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• v.16 no.2
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• pp.124-132
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• 1991

This study was carried out to obtain the information needed in the development of forward speed control system and the improvement of combine performance. The effects of variety, grain moisture content and forward speed on the combine load characteristics were investigated through experiments. The results of this study are summarized as follows. 1. A data acquisition system was developed to measure the engine speed and the torques and speeds of the threshing cylinder, dean-grain auger and tailings-return auger. The system consisted of transducers, signal conditioner, interface board and microcomputer. The system accuracy is better than ${\pm}2.3%$ full scale. 2. Linear regression equations were obtained for the torque, speed and power requirement of threshing cylinder for different paddy varieties, grain moisture contents and feed rates. 3. The maximum value of relative frequency for threshing cylinder torque decreased as the increase in feed rate and moisture content. The range of torque fluctuation was 1.2~3.7 and 1.2~1.9 times the average and maximum torque, respectively. The maximum value of power spectrum density (PSD) appeared to be about 11 Hz regardless of paddy variety, grain moisture content and feed rate. 4. The speed of tailings return thrower decreased rapidly at below 900rpm, and it fell to near zero about 3 seconds after that time. When the travelling of combine harvester was stopped immediately after sensing the overload, it took about 7 seconds for a full recovery of the no-load speed of tailings return thrower.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.655-659
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• 2007

Zirconia polycrystals co-doped with x mol% CaO and (10-x) mol% $Y_2O_3$ were prepared by solid state reaction method. The compositions were chosen for nominally the same oxygen vacancy concentration of 5 mol%. X-ray diffraction patterns indicated the formation of cubic zirconia by heat treatment at $1600^{\circ}C$. Impedance spectroscopy was applied to deconvolute the bulk and grain boundary response. Electrical conductivity was measured using the complex impedance technique from 516 to 874 K in air. Maximum conductivity was exhibited by the composition with equal amounts of CaO and $Y_2O_3$, which may be ascribed to the smaller degree of defect-interactions in that composition due to the competition of different ordering schemes between the two systems. When compared to the composition containing $Y_2O_3$ only, co-doping of CaO increases the grain boundary resistance considerably. The activation energy of grain and grain boundary conductivity was 1.1 eV and 1.2 eV, respectively, with no appreciable dependence on dopant compositions.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.149-149
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• 2011

청정 에너지원으로 높은 잠재력을 가지고 있는 가스하이드레이트는 상업적 기술개발이 미확보된 상태임에도, 우리나라에서 부존이 직접적으로 확인되었기 때문에 에너지원으로서 그 중요성이 부각되고 있다. 현재 전세계적으로 가스하이드레이트 개발 및 생산에 관한 연구가 활발히 진행되고 있으며 이에 대한 기초자료로서 가스하이드레이트가 함유된 퇴적층의 물성자료가 필요하다. 이에 따라 본 연구에서는 입도 분포별 총 5가지의 미고결 시료를 대상으로 투과도, p파속도, 전기비저항 측정을 수행하였다. 연구에 사용된 미고결 시료는 Hama#5($774{\mu}m$), #6($485{\mu}m$), #7($258{\mu}m$), #8($106{\mu}m$) 4가지와 Hama#6과 Hama#7을 1:1($371{\mu}m$)로 혼합하여 사용하였다. 실험에 사용된 장비는 가스하이드레이트를 인공적으로 생성시키기 위해 퇴적층을 모사할 수 있는 고압셀과 자료획득장비, 유체 주입장비, 온도 유지장비이다. 또한 투과도 측정에는 차압계, 전기비저항 측정에 RLC meter, p파속도 측정에 음파 송수신장비를 사용하여 각각의 물성을 측정하였다. 실험과정을 단계별로 요약하면 먼저 시료를 고압셀에 충진한 뒤 주입된 물의 양으로부터 공극률을 측정하고, 절대 투수계수를 측정하였다. 그 후, 메탄가스를 주입하여 퇴적층 내 수포화도(water saturation)를 잔류상태(irreducible saturation)로 유지시키고 메탄가스를 추가적으로 주입하여 원하는 압력까지 가압한 뒤 온도를 $1^{\circ}C$로 낮추었다. 가스하이드레이트의 생성은 급격한 압력강하로부터 알 수 있다. 최종적으로 가스하이트레이트가 함유된 퇴적층의 상대 투수계수를 측정하기 위해 메탄가스를 주입하였고 각각의 측정장비를 통해 전기비저항 및 p파 속도를 측정하였다.$V_g$, $V_h$, $V_w$, $V_ss$는 각각 가스의 부피, 하이드레이트의 부피, 물의 부피, 모래의 부피이다. 또한 수포화도, $S_w=\frac{V_w}{V_v}$이며 하이드레이트 포화도, $S_h=\frac{V_w}{V_v}$, 가스 포화도, $S_g=\frac{V_g}{V_v}$로 정의된다. 본 실험의 결과 투과도는 가스의 부피비, $\frac{V_g}{V}=nS_g$에 민감한 반응을 보였으며, 비저항은 공극수의 부피비, $\frac{V_w}{V}=nS_w$에 민감한 반응을 보였다. 또한 p파 속도는 고체의 부피비, $\frac{V_s+V_h}{V}=n(1-S_h)$에 민감한 반응을 보였다. 이러한 실험의 결과는 가스하이드레이트 개발, 생산 연구에 있어 기초 물성자료로 활용되는데 도움을 줄 것이다.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.314-319
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• 2000

Microstructueral development and electrical properties in ZnO-Bi2O3-ZnAl2O4 system were investigated with ZnAl2O4 content(0.1~1.0 mol%). The shrinakge of specimens started around $700^{\circ}C$ and finished at 110$0^{\circ}C$, reaching a maximum shrinkage rate at 80$0^{\circ}C$. The shrinkage rate is strongly related to the fromation of a Bi-rich liquid. The increase of the ZnAl2O4 content inhibited the grain growth of ZnO. Most of ZnAl2O4 particles located at the grain boundaries were about 2~3${\mu}{\textrm}{m}$. ZnO grain size changed little up to 110$0^{\circ}C$, but increased markedly above 115$0^{\circ}C$, especially at lower ZnAl2O4 content. Drastic decreasing in breakdown voltage(Vb) with increasing temperature is expected to be dependent on the ZnO grain size and the distribution of the largest grains between the electrode. The nonlinear I-V characteristic was significantly influenced by the ZnAl2O4 content, which exhibited a maximum value at about 15${\mu}{\textrm}{m}$ of ZnO grain size.