• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.57-57
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• 2010

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.80-81
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• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.416-419
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. We studied of phase-change according to temperature and voltage in chalcogenide thin film base on $Ge_2Sb_2Te_5$. Searching for Tg(Glass transition temperature) temperature controlled on hotplate with RT quenching. We measure I-V characteristic through out bottom electrode(ITO) and top electrode(Al) between $Ge_2Sb_2Te_5$. And compared with I-V characteristics after impress the variable stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.107-107
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• 2010

In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

• Transactions of the Society of Information Storage Systems
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• v.2 no.3
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• pp.196-200
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• 2006

We are developing a phase change etching technology using an inorganic photoresist of GeSbTe film which is the recording material of the phase change disc. A selective etching phenomenon between amorphous and crystalline states can be utilized with an alkaline etchant. Phase-change pits could be formed using this technique, in which the etching selectivity is strongly dependent on the concentration of the etchant. The degree of etching was investigated by the transmittance between crystalline and amorphous films after the wet-etching. The pits patterned on the disc could be observed by AFM after wet-etching.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.24-27
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• 2003

We have been investigated phase-change with temperature and electric field in chalcogenide Ge$_2$Sb$_2$Te$\sub$5/ thin film. T$\sub$c/(crystallization temperature) is confirmed by measuring the resistance with the varying temperature on the hotplate. We have measured I-V characteristics with Ge$_2$Sb$_2$Te$\sub$5/ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1335-1336
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• 2007

Among the emerging non-volatile memory technologies, phase change memories are the most attractive in terms of both performance and scalability perspectives. Phase-change random access memory(PRAM), compare with flash memory technologies, has advantages of high density, low cost, low consumption energy and fast response speed. However, PRAM device has disadvantages of set operation speed and reset operation power consumption. In this paper, we investigated scalability of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material to improve its properties. As a result, reduction of phase change region have improved electrical properties of PRAM device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.514-515
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• 2005

본 논문에서는 As-Ge-Se-S 박막에 (P:P) 편광빔을 이용하여 회절격자를 형성시키고 비편광 (Non-Polarization) 빔을 이용하여 생성된 격자를 소거시키고 그에 따른 회절효율을 조사 하였다. (P:P) 편광으로 기록된 회절 효율은 시간이 지나도 최대 회절효율의 변화가 없었으나 비편광 빔으로 기록된 회절효율은 시간이 지남에 따라 급격한 회절효율의 감소를 보인다. 따라서 (P:P) 편광으로 회절격자를 형성시키고 비편광빔으로 격자의 소거를 진행하여 약 83%의 회절격자의 소거가 이루어졌다.

• Bulletin of the Korean Chemical Society
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• v.21 no.11
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• pp.1090-1094
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• 2000

A reaction between germanium (Ge) and the ligand, o-chlorophenylfluorone (o-CPF) has been carried out. The reaction sensitive at pH 4.5 in the presence of triton x-100 was selective in the presence of EDTA. The spectral correction technique was ap plied to the analysis of the reaction instead of single wavelength spectrophotometry because the absorption of excess of o-CPF was not negligible. An updated determination of the properties of the Ge(IV)-o-CPF complex is given, which involved the complex ratio, stepwise absorptivity and stability constant of the complex. In present work, the results show that the complex $Ge(o-CPF)_3was$ formed and its cumulative stability constant was 1.09 ${\times}$1016 . For sample analysis, the detection limit of germanium was 0.01 mg/L, and the recoveries were between 96.4% and 102%, with relative standard deviations of less than 6.5%.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.2
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• pp.36.3-37
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• 2018

By utilizing large-scale graph analytic tools in the modern Big Data platform, Apache Spark, we investigate the topological structures of five different multiverses produced by cosmological n-body simulations with various cosmological initial conditions: (1) one standard universe, (2) two different dark energy states, and (3) two different dark matter densities. For the Big Data calculations, we use a custom build of stand-alone Spark cluster at KIAS and Dataproc Compute Engine in Google Cloud Platform with the sample sizes ranging from 7 millions to 200 millions. Among many graph statistics, we find that three simple graph measurements, denoted by (1) $n_\k$, (2) $\tau_\Delta$, and (3) $n_{S\ge5}$, can efficiently discern different topology in discrete point distributions. We denote this set of three graph diagnostics by kT5+. These kT5+ statistics provide a quick look of various orders of n-points correlation functions in a computationally cheap way: (1) $n = 2$ by $n_k$, (2) $n = 3$ by $\tau_\Delta$, and (3) $n \ge 5$ by $n_{S\ge5}$.