Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The study of phase-change according to temperature and voltage in chalcogenide thin film

칼코게나이드 박막의 온도, 전압에 따른 상변화에 관한 연구

  • Yang, Sung-Jun (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Shin, Kyung (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Park, Jung-Il (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Nam, Lee-Ki (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Department of Electronic Materials Eng. Kwangwoon Univ.)
  • 양성준 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 박정일 (광운대학교 전자재료공학과) ;
  • 이기남 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2003.07.10
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Abstract

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. We studied of phase-change according to temperature and voltage in chalcogenide thin film base on $Ge_2Sb_2Te_5$. Searching for Tg(Glass transition temperature) temperature controlled on hotplate with RT quenching. We measure I-V characteristic through out bottom electrode(ITO) and top electrode(Al) between $Ge_2Sb_2Te_5$. And compared with I-V characteristics after impress the variable stress.

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