• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.89-90
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• 2009

Three kind of surface-leakage-test-patterns were fabricated and measured in order to investigate the surface leakage current of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall. The pattern which contain the mesa wall has the largest surface leakage current among them. The leakage current due to the mesa wall is predominant source of the leakage current of AlGaN/GaN devices.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.654-658
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• 2009

For investigation of surface leakage currrent of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall, three kind of surface-leakage-test-patterns were fabricated. and we measured the surface leakage current of each patterns. In result of our work, the surface leakage current of pattern of which Schottky contact is formed on etched mesa wall is the largest. the leakage current through schottky contact on etched mesa wall is predominant in AlGaN/GaN heterostructures.

• 한국결정성장학회지
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• 제9권2호
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• pp.168-172
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• 1999

HVPE 법으로 sapphire 기판 위에 두께 9$\mu\textrm{m}$의 GaN film을 성장하였다. Sapphire위에 직접 성장된 GaN film은 crack free로 mirror surface를 나타내었고 dislocation density는 $2{\times}10^9/cm^2$이었다.$SiO_2$ mask pattern을 사용하여 성장된 ELO GaN film도 대부분이 mirror surface를 나타내었으나 표면 일부에서 coalescence가 덜 이루어져 stripe 방향으로 hole이 존재하였다. ELO GaN film의 mask 윗부분은 window 부분에 비해 낮은 dislocation density를 나타냈다. 특히 mask center와 window사이 영역에서는 거의 dislocation이 없었다. ELO GaN film의 dislocation density는 평균 $8{\times}10^7/cm^2$.이었다.

• 열처리공학회지
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• 제31권5호
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Transactions on Electrical and Electronic Materials
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• 제10권2호
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• pp.40-43
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• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.29-33
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• 2011

Film growth rate and composition variation are numerically analyzed during the selective area growth of InGaN on the GaN triangular stripe microfacet in this study. Both the vapor phase diffusion and the surface diffusion are considered to determine the In composition on the InGaN surface. To obtain the In composition on the surface, flux of In atoms due to the surface diffusion is added to the concentration determined from the Laplace equation which is governing the gas phase diffusion. The solution model is validated by comparing the growth rates from the analyses to the experimental results of GaN and InN films. The In composition and resulting wave length are increased when the surface diffusion is considered. The In content is also increased according to the increasing mask width. The effect of mask width to the In content and wave length is increasing in the case of a small open region.

• 센서학회지
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• 제25권4호
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• pp.252-256
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• 2016

Epitaxially grown GaN layers have a high surface state density, which typically results in a surface leakage current and a photoresponse in undesirable wavelengths in GaN optoelectronic devices. Surface passivation is, therefore, an important process necessary to prevent performance degradation of GaN UV photodetectors. In this study, we propose oxygen-enhanced thermal treatment as a simple surface passivation process without capping layers. The GaN UV photodetector fabricated using a thermal annealing process exhibits improved electrical and photoresponsive characteristics such as a reduced dark current and an enhanced photoresponsive current and UV-to-visible rejection ratio. The results of this study show that the proposed surface passivation method would be useful to enhance the reliability of GaN-based optoelectronic devices.

• 한국표면공학회지
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• 제36권2호
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• 한국재료학회지
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• 제11권7호
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• pp.575-579
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• 2001

Metal organic chemical vapor deposition (MOCVB)법을 사용하여 sapphire (0001) 기판 위에 GaN 환충층을 성장하고, 그 위에 GaN 에피층을 성장하였다. GaN 완충층은 55$0^{\circ}C$에서 약 26 nm에서 130 nm까지 각각 다른 두께로 성장하였고, GaN 에피층은 110$0^{\circ}C$에서 약 4 $\mu\textrm{m}$의 두께로 성장하였다. GaN 완충층 성장 후 atomic force microscopy (AFM)으로 표면 형상을 측정하였다. GaN 완충층의 두께가 두꺼워질수록 GaN 에피층의 표면이 매끈해지는 것을 scanning electron microscopy (SEM)으로 관찰하였다. 이것으로 GaN 에피층의 표면은 완충층의 두께와 표면 거칠기와 관계가 있다는 것을 알 수 있었다. GaN 에피층의 결정학적 특성을 double crystal X-ray diffraction (DCXRD)와 Raman spectroscopy로 측정하였다. 성장된 GaN 에퍼층의 광학적 특성을 photoluminescence (PL)로 조사한 결과 두께가 두꺼운 완충층 위에 성장된 에퍼층의 결정성이 더 좋은 반면, 내부 잔류응력은 증가하는 결과를 보였다. 이러한 사실들로부터 완충층의 두께가 두꺼워짐에 따라 내부 자유에너지가 감소하여 에피층 성장시 측면성장을 도와 표면이 매끈해지고, 결정성이 좋아졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.131-132
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• 2007

An AlGaN/GaN high electron mobility transistor(HEMT) was fabricated and the effect of photoelectrochemical oxidation of AlGaN/GaN surface was investigated. The oxidation of AlGaN surface was done in water at the bias of 10 V under the deep UV light illumination. The sheet resistance of the AlGaN/GaN structure was increased and gate leakage current of the HEMT was decreased by the oxidation. However, the transconductance of the HEMT was not degraded by the oxidation.