Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.04b
- /
- Pages.89-90
- /
- 2009
A Study of Surface leakage current of AlGaN/GaN Heterostructures
AlGaN/GaN 이종접합구조의 표면누설전류에 관한 연구
- Seok, O-Gyun (Seoul National Univ.) ;
-
Choi, Young-Hwan
(Seoul National Univ.)
;
-
Lim, Ji-Yong
(Seoul National Univ.)
;
- Kim, Young-Shil (Seoul National Univ.) ;
- Kim, Min-Ki (Seoul National Univ.) ;
-
Han, Min-Koo
(Seoul National Univ.)
- Published : 2009.04.03
Abstract
Three kind of surface-leakage-test-patterns were fabricated and measured in order to investigate the surface leakage current of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall. The pattern which contain the mesa wall has the largest surface leakage current among them. The leakage current due to the mesa wall is predominant source of the leakage current of AlGaN/GaN devices.