Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.131-132
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- 2007
Photoelectrochemical oxidation of AlGaN-GaN HEMT
AlGaN/GaN HEMT의 광화학적 산화
- Moon, S.H. (Chonbuk National University) ;
- Hong, S.K. (Chonbuk National University) ;
- Ahn, H.J. (Chonbuk National University) ;
- Lee, J.S. (Chonbuk National University) ;
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Shim, K.H.
(Chonbuk National University)
;
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Yang, J.W.
(Chonbuk National University)
- Published : 2007.06.21
Abstract
An AlGaN/GaN high electron mobility transistor(HEMT) was fabricated and the effect of photoelectrochemical oxidation of AlGaN/GaN surface was investigated. The oxidation of AlGaN surface was done in water at the bias of 10 V under the deep UV light illumination. The sheet resistance of the AlGaN/GaN structure was increased and gate leakage current of the HEMT was decreased by the oxidation. However, the transconductance of the HEMT was not degraded by the oxidation.