• 전자공학회논문지A
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• 제31A권6호
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• pp.199-208
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• 1994

This paper proposes a delay fault test technique for ICs and PCBs with the boundary-scan architectures supporting ANSI/IEEE Std 1149.1-1990. The hybrid delay fault model, which comprises both of gate delay faults and path delay faults, is selected. We developed a procedure for testing delay faults in the circuits with typical boundary scan cells supporting the standard. Analyzing it,we concluded that it is impractical because the test clock must be 2.5 times faster than the system clock with the cell architect-ures following up the state transition of the TAP controller and test instruction set. We modified the boundary-scan cell and developed test instructions and the test procedure. The modified cell and the procedure need test clock two times slower than the system clock and support the ANSI/IEEE standard perfectly. A 4-bit ALU is selected for the circuits under test. and delay tests are simulated by the SILOS simulator. The simulation results ascertain the accurate operation and effectiveeness of the modified mechanism.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.30-31
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• 2008

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthroug(NPT) Insulated Gate Bipolar Transistor with heatsink areas has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data by thermocam.

• 전자공학회논문지B
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• 제32B권11호
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• pp.1434-1444
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• 1995

Current test has recently been known to be a promising testing method in CMOS VLSI because conventional voltage test can not make sure of the complete detection of bridging, gate-oxide shorts, stuck-open faults and etc. This paper presents a new BIC(built-in current sensor) for the internal current test in CMOS logic circuit. A single phase clock is used in the BIC to reduce the control circuitry of it and to perform a self- testing for a faulty current. The BIC is designed to detect the faulty current at the end of the clock period, so that it can test the CUT(circuit under test) with much longer critical propagation delay time and larger area than conventional BICs. The circuit is composed of 18 devices and verified by using the SPICE simulator.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.120-124
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• 2000

In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.147-148
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• 2005

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, thermal distribution of the Insulated Gate Bipolar Transistor Module has been studied with different conditions and heat sink materials. For analysis of thermal distribution, we obtained results by using finite element simulator, Ansys.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.172-173
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• 2007

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The thermal analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthrough(NPT) Insulated Gate Bipolar Transistor has been studied. For analysis of thermal distribution, we obtained experimental and simulation results by using finite element simulator, Ansys and by using photographic infrared thermometer, we compared experimental date with simulation result. and got good agreement. Also this paper provided thermal distribution of IGBT connected to heat sinks. and this results will be good information to design optimal heat sink for IGBT.

• 로봇학회논문지
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• 제16권3호
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• pp.245-249
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• 2021

In this paper, we present novel simulation contents for drone racing and autonomous flight of drone. With Depth camera and SLAM, we conducted mapping 3 dimensional environment through RTAB-map. The 3 dimensional map is represented by point cloud data. After that we recovered this data in Unreal Engine. This recovered raw data reflects real data that includes noise and outlier. Also we built drone racing contents like gate and obstacles for evaluating drone flight in Unreal Engine. Then we implemented both HITL and SITL by using AirSim which offers flight controller and ROS api. Finally we show autonomous flight of drone with ROS and AirSim. Drone can fly in real place and sensor property so drone experiences real flight even in the simulation world. Our simulation framework increases practicality than other common simulation that ignore real environment and sensor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• 한국정보처리학회논문지
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• 제4권1호
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• pp.311-323
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• 1997

본 논문에서는 게이트 레벌 소자와 스위치 레벨 소자가 함께 사용한 혼합형 조합 회로에서의 고착 고장(stuck-at fault) 검출을 위한 고장 시뮬레이션에 대하여 기술 한다. 실용적인 혼합형 회로의 고장 검출용으로 사용하기 위하여 게이트 레벨 및 정 적 스위치 레벨 회로는 물론 동적 스위치 레벨의 회로들도 처리할 수 있도록 한다. 또한, wired 논리 소자에서의 다중 신호 충돌 현상을 해결하기 위하여 새로운 6치 논 리값과 연산 규칙을 정의하여 신호 세기의 정보와 함께 사용한다. 고장 시뮬레이션의 기본 알고리즘으로는 게이트 레벨 조합 회로에서 주로 사용되는 병렬 패턴 단일 고장 전달(PPSFP:parallel pattern single fault propagation) 기법을 스위치 레벨 소자에 확장 적용한다. 마지막으로 스위치 레벨 소자로 구현된 ISCAS85 벤치 마크 회로와 실 제 혼합형 설계 회로에 대한 실험 결과를 통하여 본 연구에서 개발된 시스템의 효율 성을 입증한다.

• 전기전자학회논문지
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• 제19권2호
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• pp.265-270
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• 2015

본 논문에서는 높은 홀딩 전압을 갖는 SCR(silicon-controlled rectifier)기반 양 방향성 ESD 보호회로를 제안하였다. 일반적인 ESD 보호회로와 달리 양방향의 ESD Stress mode의 방전경로를 제공하며 높은 홀딩전압으로 latch-up면역 특성을 갖어 효과적인 ESD보호를 제공한다. 또한, 높은 홀딩전압을 위한 설계변수인 Gate Length와 N+bridge Length의 길이 변화에 따른 시뮬레이션을 Synopsys사의 TCAD 시뮬레이터를 사용하여 확인 하였다. 시뮬레이션 결과 2.1V에서 6.5V까지 홀딩 전압의 증가로 latch-up 면역 특성을 개선 하였으며, 기존 SCR보다 6.5V의 낮은 트리거 전압특성을 갖고 있어 제안된 ESD 보호 회로는 5V 이상의 공급전압을 갖는 application에 적용 가능하다.