Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Study on Improved Switching Characteristics of LIGBT by the Trap Injection

Trap 주입에 의한 LIGBT의 스위칭 특성 향상에 관한 연구

  • 추교혁 (고려대학교 공과대학 전기공학과) ;
  • 강이구 (고려대학교 공과대학 전기공학과) ;
  • 성만영 (고려대학교 공과대학 전기공학과)
  • Published : 2000.02.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

Keywords

References

  1. Power Semiconductor Devices B. J. Baliga
  2. Trends in Power Semiconduc-tor Devices v.43 no.10 B. J. Baliga
  3. Semiconductor Power Device S. K. Ghandi
  4. Proc. IEEE v.76 no.8 Power Electronics - A Technology Review B. K. Bose
  5. Proc. IEEE v.76 no.4 Power Semiconductor Devices : An Overview P. L. Hower
  6. IEEE Trans. on Power Electronics v.13 no.2 The State of the Art of Power Electroncis in Japan H. Akagi
  7. IEEE Trans. Electron Devices v.38 no.7 Analysis of Negative Differential Resistance in the I-V Charac-teris-tics of Shorted-Anode LIGBT's M. R. Simpson
  8. IEEE Electron Device Letters v.11 no.9 The Complementary Insulated-Gate Bipolar Transistor (CIGBT) - A New Power Switching Device D. M. Boisvert
  9. IEEE Electron Device Letters v.20 no.1 Effect of IGBT Switching Dynamics on Loss Calculations in High Speed Applications A. Bhalla
  10. IEEE Electron Device Letters v.18 no.7 Innovative Localized Lifetime Control in High-Speed IGBT's M. Saggio
  11. IEEE Trans. Electron Devices v.24 no.6 Comparison of Gold, Platinum, and Electron Irradiation for Controlling Lifetime in Power Rectifiers B. J. Baliga
  12. IEEE Trans. Power Electronic v.14 no.4 Numerical Analysis of Local Lifetime Control for High-Speed Low-Loss P-i-N Diode Design E. Napoli
  13. Solid-State Electronics v.42 no.12 Voids in Silicon Power Devices V. Rainera
  14. Two-Dimensional Device Simulation Program TMA, Inc.